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MCP6N16T-100E/MF

产品描述instrumentation amplifiers single, zero-drift instr amp, E temp
产品类别模拟混合信号IC    放大器电路   
文件大小8MB,共58页
制造商Microchip(微芯科技)
官网地址https://www.microchip.com
标准
下载数据手册 下载用户手册 详细参数 选型对比 全文预览

MCP6N16T-100E/MF概述

instrumentation amplifiers single, zero-drift instr amp, E temp

MCP6N16T-100E/MF规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Microchip(微芯科技)
包装说明HVSON, SOLCC8,.11,25
Reach Compliance Codecompli
ECCN代码EAR99
Factory Lead Time8 weeks
放大器类型INSTRUMENTATION AMPLIFIER
最大平均偏置电流 (IIB)0.0001 µA
最小共模抑制比112 dB
最大输入失调电流 (IIO)0.0008 µA
最大输入失调电压17 µV
JESD-30 代码S-PDSO-N8
JESD-609代码e3
长度3 mm
湿度敏感等级1
最大非线性0.25%
功能数量1
端子数量8
最高工作温度125 °C
最低工作温度-40 °C
封装主体材料PLASTIC/EPOXY
封装代码HVSON
封装等效代码SOLCC8,.11,25
封装形状SQUARE
封装形式SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
包装方法TR
峰值回流温度(摄氏度)260
座面最大高度1 mm
最大压摆率1.6 mA
供电电压上限6.5 V
标称供电电压 (Vsup)2.9 V
表面贴装YES
技术CMOS
温度等级AUTOMOTIVE
端子面层Matte Tin (Sn) - annealed
端子形式NO LEAD
端子节距0.65 mm
端子位置DUAL
处于峰值回流温度下的最长时间40
最小电压增益100
标称电压增益126
宽度3 mm

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MCP6N16
Zero-Drift Instrumentation Amplifier
Features:
• High DC Precision:
- V
OS
: ±17 µV (maximum, G
MIN
= 100)
- TC
1
: ±60 nV/°C (maximum, G
MIN
= 100)
- CMRR: 112 dB (minimum, G
MIN
= 100,
V
DD
= 5.5V)
- PSRR: 110 dB (minimum, G
MIN
= 100,
V
DD
= 5.5V)
- g
E
: ±0.15% (maximum, G
MIN
= 10, 100)
• Flexible:
- Minimum Gain (G
MIN
) Options:
1, 10 and 100 V/V
- Rail-to-Rail Input and Output
- Gain Set by Two External Resistors
• Bandwidth: 500 kHz (typical, Gain = G
MIN
= 1, 10)
• Power Supply:
- V
DD
: 1.8V to 5.5V
- I
Q
: 1.1 mA (typical)
- Power Savings (Enable) Pin: EN
• Enhanced EMI Protection:
- Electromagnetic Interference Rejection Ratio
(EMIRR): 111 dB at 2.4 GHz
• Extended Temperature Range: -40°C to +125°C
Description:
Microchip Technology Inc. offers the single Zero-Drift
MCP6N16 instrumentation amplifier (INA) with Enable
pin (EN) and three minimum gain options (G
MIN
). The
internal offset correction gives high DC precision: it has
very low offset and offset drift, and negligible 1/f noise.
Two external resistors set the gain, minimizing gain
error and drift over temperature. The reference voltage
(V
REF
) shifts the output voltage (V
OUT
).
The MCP6N16 is designed for single-supply operation,
with rail-to-rail input (no common mode crossover
distortion) and output performance. The supply voltage
range (1.8V to 5.5V) is low enough to support many
portable applications. All devices are fully specified
from -40°C to +125°C. Each part has EMI filters at the
input pins, for good EMI rejection (EMIRR).
These parts have three minimum gain options (1, 10
and 100 V/V). This allows the user to optimize the input
offset voltage and input noise for different applications.
Typical Application Circuit
V
DD
2.49 kΩ
10 µF
EN
4.99 kΩ
4.99 kΩ
RTD Temperature Sensor
Typical Applications:
High-Side Current Sensor
Wheatstone Bridge Sensors
Difference Amplifier with Level Shifting
Power Control Loops
MCP6N16-100
V
OUT
20 kΩ
100Ω
100Ω
68.1Ω
4.99 kΩ
RTD
100Ω
Design Aids:
• SPICE Macro Model
• Microchip Advanced Part Selector (MAPS)
• Application Notes
Package Types
MCP6N16
MSOP
EN 1
V
IM
2
V
IP
3
V
SS
4
8 V
DD
7 V
OUT
6 V
FG
5 V
REF
MCP6N16
3×3 DFN *
EN 1
V
IM
2
V
IP
3
V
SS
4
EP
9
8 V
DD
7 V
OUT
6 V
FG
5 V
REF
* Includes Exposed Thermal Pad (EP); see
Table 3-1.
2014 Microchip Technology Inc.
DS20005318A-page 1

MCP6N16T-100E/MF相似产品对比

MCP6N16T-100E/MF MCP6N16T-010E/MF MCP6N16T-100E/MS MCP6N16T-010E/MS
描述 instrumentation amplifiers single, zero-drift instr amp, E temp instrumentation amplifiers single, zero-drift instr amp, E temp instrumentation amplifiers single, zero-drift instr amp, E temp instrumentation amplifiers single, zero-drift instr amp, E temp
是否Rohs认证 符合 符合 符合 符合
厂商名称 Microchip(微芯科技) Microchip(微芯科技) Microchip(微芯科技) Microchip(微芯科技)
包装说明 HVSON, SOLCC8,.11,25 HVSON, SOLCC8,.11,25 TSSOP, TSSOP8,.19 TSSOP, TSSOP8,.19
Reach Compliance Code compli compliant compli compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99
Factory Lead Time 8 weeks 8 weeks 12 weeks 8 weeks
放大器类型 INSTRUMENTATION AMPLIFIER INSTRUMENTATION AMPLIFIER INSTRUMENTATION AMPLIFIER INSTRUMENTATION AMPLIFIER
最大平均偏置电流 (IIB) 0.0001 µA 0.0001 µA 0.0001 µA 0.0001 µA
最小共模抑制比 112 dB 103 dB 112 dB 103 dB
最大输入失调电流 (IIO) 0.0008 µA 0.0008 µA 0.0008 µA 0.0008 µA
最大输入失调电压 17 µV 22 µV 17 µV 22 µV
JESD-30 代码 S-PDSO-N8 S-PDSO-N8 S-PDSO-G8 S-PDSO-G8
JESD-609代码 e3 e3 e3 e3
长度 3 mm 3 mm 3 mm 3 mm
湿度敏感等级 1 1 1 1
最大非线性 0.25% 0.25% 0.25% 0.25%
功能数量 1 1 1 1
端子数量 8 8 8 8
最高工作温度 125 °C 125 °C 125 °C 125 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 HVSON HVSON TSSOP TSSOP
封装等效代码 SOLCC8,.11,25 SOLCC8,.11,25 TSSOP8,.19 TSSOP8,.19
封装形状 SQUARE SQUARE SQUARE SQUARE
封装形式 SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
包装方法 TR TR TR TR
峰值回流温度(摄氏度) 260 260 260 260
座面最大高度 1 mm 1 mm 1.1 mm 1.1 mm
最大压摆率 1.6 mA 1.6 mA 1.6 mA 1.6 mA
供电电压上限 6.5 V 6.5 V 6.5 V 6.5 V
标称供电电压 (Vsup) 2.9 V 2.9 V 2.9 V 2.9 V
表面贴装 YES YES YES YES
技术 CMOS CMOS CMOS CMOS
温度等级 AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE
端子面层 Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed
端子形式 NO LEAD NO LEAD GULL WING GULL WING
端子节距 0.65 mm 0.65 mm 0.65 mm 0.65 mm
端子位置 DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 40 40 40 40
最小电压增益 100 10 100 10
标称电压增益 126 118 126 118
宽度 3 mm 3 mm 3 mm 3 mm

 
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