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2286100-R

产品描述Memory Circuit,
产品类别存储    存储   
文件大小797KB,共2页
制造商PMC-Sierra Inc
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2286100-R概述

Memory Circuit,

2286100-R规格参数

参数名称属性值
包装说明,
Reach Compliance Codeunknow
内存密度137438953472 bi
内存集成电路类型MEMORY CIRCUIT
内存宽度8
功能数量1
字数17179869184 words
字数代码16000000000
工作模式ASYNCHRONOUS
最高工作温度50 °C
最低工作温度
组织16GX8
封装主体材料UNSPECIFIED
封装形状UNSPECIFIED
技术CMOS
温度等级COMMERCIAL
Base Number Matches1

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下载PDF文档
NV1600 Flashtec™
NVRAM Drive Family
Preliminary Product Brief
Product Overview
The PMC Flashtec™ NVRAM Drive family provides a PCI Express
NV-RAM solution based on the most advanced NVMe Controller on
the market. This family provides a new level of performance to the
memory/storage hierarchy, ushering Storage System OEMs and
Cloud Applications and Service Providers to the era of Storage Class
Memory.
Benefits
Unlimited Endurance
Unlike SSDs, DRAM has practically unlimited endurance, and with up
to 16GB of Non Volatile DRAM Memory, it can fit very demanding
workloads as well.
High Performance I/O
1 Million IO/s in NVMe Block Mode (4KB); Over 10 Million IO/s in Direct
Memory Mode.
Establishes New Storage Tier with Superior
Performance
Non-volatile DRAM-like performance, NAND persistence
Over 10 million IOPS
Sub-microsecond latency
Power Failure Protection
Flash-based Backup Unit protects memory content in the event of a
power failure.
Faster Time to Market & Lower Cost of Ownership
Industry-standard interfaces
Application friendly for ease of integration
Zero maintenance green backup
“Enterprise Class” for Mission Critical Data Center
Higher Availability
A fast Backup and Recovery cycle ensures that Mission Critical Appli-
cation will have a shorter recovery time across power failure events.
Lower TCO
Eliminating the UPS or BBU frees up rack space and reduces support
and maintenance cost without compromising critical system data
across power failures.
Applications
Uncompromising quality and reliability
Unlimited endurance NVRAM
Small form factor for high-density rack solutions
Write Cache for Low-Latency Response Time
64-bit Addressable Persistent Metadata Memory Region
Persistent Shared Memory for Scale-Out Clustered Systems
High Performance Journaling or Write Ahead Logging
Persistent Cache for Fast Cache Rebuild
Performance Tier de-staging to Sequential-Access Capacity Tier
Features
Host Interface
PCI Express
Form Factor
Access Modes
Memory Capacity
Backup Store
Data Retention Offline
No. of Backup Images
Backup Power Supply
Auxiliary Power
Operational Lifetime
x8 lane
3.0
Low Profile MD2 PCIe Add-In Card
Block Mode and
Direct Memory Mode
4/8/16GB Configurations
Flash Module
3 Months
Two Backup Image Banks
Tethered Super Capacitor Module
Optional 5V Input
5 Years
< 15 sec
< 20 sec
> 3000
NVMe
Cloud-Scale Performance & Availability
While SSD solutions continue to replace traditional HDDs in the
performance tier of the storage hierarchy, there remains a significant
performance gap between the memory tiers and the storage tiers in
terms of latency, endurance and high availability. As application
demands continue to increase at an ever growing pace to keep up
with the growth rate of cloud services, relying on volatile memory to
achieve desired performance leaves applications vulnerable to data
loss in the event of a system failure.
There is a need for a new tier of memory that would provide mission
critical applications the necessary safety net for their data while
keeping pace with the application requirements for performance
without compromising data protection, reliability and availability.
Flashtec NVRAM Drive products serve exactly that need, and with
>10M IOPS and up to 16GB of memory per card, the product family
can address the needs of the most demanding applications.
Restore Time
Backup Time
Backup Cycles
Management Interface
PMC-2142816, Issue 2
Copyright © 2014 PMC-Sierra, Inc.
All rights reserved. Proprietary and Confidential to PMC-Sierra and for its customers’ internal use.

2286100-R相似产品对比

2286100-R 2285500-R
描述 Memory Circuit, Memory Circuit,
Reach Compliance Code unknow unknow
内存密度 137438953472 bi 68719476736 bi
内存集成电路类型 MEMORY CIRCUIT MEMORY CIRCUIT
内存宽度 8 8
功能数量 1 1
字数 17179869184 words 8589934592 words
字数代码 16000000000 8000000000
工作模式 ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 50 °C 50 °C
组织 16GX8 8GX8
封装主体材料 UNSPECIFIED UNSPECIFIED
封装形状 UNSPECIFIED UNSPECIFIED
技术 CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL
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