AP2318AGEN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Capable of 2.5V Gate Drive
▼
Small Outline Package
▼
Surface Mount Device
▼
RoHS Compliant & Halogen-Free
SOT-23
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
S
G
30V
1.5Ω
540mA
D
I
D
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is widely used for commercial-industrial surface mount
applications.
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@ 4V
Continuous Drain Current
3
, V
GS
@ 4V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+16
540
430
2
0.7
-55 to 150
-55 to 150
Units
V
V
mA
mA
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
180
Unit
℃/W
1
201105121
Data and specifications subject to change without notice
AP2318AGEN-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=4V, I
D
=500mA
V
GS
=2.5V, I
D
=200mA
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=V
GS
, I
D
=250uA
V
DS
=4V, I
D
=500mA
V
DS
=24V, V
GS
=0V
V
GS
=+16V, V
DS
=0V
I
D
=0.5A
V
DS
=15V
V
GS
=4.5V
V
DS
=15V
I
D
=0.5A
R
G
=3.3Ω
V
GS
=5V
V
GS
=0V
V
DS
=15V
f=1.0MHz
Min.
30
-
-
0.3
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
500
-
-
1
0.4
0.3
16
55
50
90
23
15
10
Max. Units
-
1.5
2.5
1.2
-
10
+60
1.6
-
-
-
-
-
-
37
-
-
V
Ω
Ω
V
mS
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
Test Conditions
I
S
=500mA, V
GS
=0V
Min.
-
Typ.
-
Max. Units
1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 400℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2318AGEN-HF
2.5
1.6
T
A
= 25 C
2.0
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
5.0V
4.5V
4.0V
T
A
=150 C
1.2
o
5.0V
4.5V
4.0V
1.5
0.8
1.0
2.5V
0.4
0.5
2.5V
V
G
=2.0V
V
G
=2.0V
0.0
0
1
2
3
4
5
6
0.0
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3300
2.0
I
D
=200mA
T
A
=25
o
C
Normalized R
DS(ON)
1
2
3
4
5
1.6
I
D
=500mA
V
G
=4V
R
DS(ON)
(m
Ω
)
2300
1.2
1300
0.8
300
0.4
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
2
I
D
=250uA
1.6
1.6
I
S
(A)
1.2
Normalized V
GS(th)
(V)
1.4
1.2
T
j
=150
o
C
0.8
T
j
=25
o
C
0.8
0.4
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2318AGEN-HF
f=1.0MHz
6
40
I
D
=0.5A
V
DS
=15V
V
GS
, Gate to Source Voltage (V)
5
30
4
3
C (pF)
C
iss
20
2
10
1
C
oss
C
rss
0
0
0
0.4
0.8
1.2
1.6
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
1
Operation in this
area limited by
R
DS(ON)
Normalized Thermal Response (R
thja
)
Duty factor=0.5
0.2
I
D
(A)
0.1
1ms
0.1
0.1
P
DM
0.05
t
T
10ms
100ms
T
A
=25
o
C
Single Pulse
1s
DC
0.02
0.01
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 400℃/W
Single Pulse
0.01
0.1
1
10
100
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
1.6
V
DS
=5V
T
j
= -40 C
I
D
, Drain Current (A)
1.2
o
V
G
T
j
=25 C
T
j
=150
o
C
o
Q
G
4.5V
Q
GS
0.8
Q
GD
0.4
Charge
0.0
Q
0
2
4
6
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Circuit
4
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