DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D168
BZG03 series
Voltage regulator diodes
Preliminary specification
Supersedes data of October 1993
1996 Jun 07
Philips Semiconductors
Preliminary specification
Voltage regulator diodes
FEATURES
•
Glass passivatedb
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
UL 94V-O classified plastic
package
•
Zener working voltage range:
10 to 270 V for 35 types
•
Supplied in 12 mm embossed tape.
DESCRIPTION
DO-214AC surface mountable
package with glass passivated chip.
BZG03 series
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
handbook, 4 columns
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
,,
,,
,,
k
cathode
band
a
Top view
Side view
MSA473
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
P
tot
P
tot
P
ZSM
T
stg
T
j
PARAMETER
total power dissipation
total power dissipation
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
CONDITIONS
T
tp
= 100
°C;
see Fig.2
T
amb
= 50
°C;
see Fig.2; device
mounted on an Al
2
O
3
PCB (see Fig.5)
t
p
= 100
µs;
square pulse;
T
j
= 25
°C
prior to surge; see Fig.3
MIN.
−
−
−
−65
−65
MAX.
3.00
1.25
600
+175
+175
UNIT
W
W
W
°C
°C
1996 Jun 07
2
Philips Semiconductors
Preliminary specification
Voltage regulator diodes
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
I
F
= 0.5 A; see Fig.4
BZG03 series
MAX.
1.2
V
UNIT
Per type
T
j
= 25
°C
unless otherwise specified.
TYPE
No.
SUFFIX
(1)
WORKING VOLTAGE
V
Z
(V) at I
Z
MIN.
NOM.
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
MAX.
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
87
96
106
116
127
DIFFERENTIAL TEMPERATURE
TEST
RESISTANCE
COEFFICIENT CURRENT
r
dif
(Ω) at I
Z
TYP.
2
4
4
5
5
6
6
6
6
7
7
8
8
21
21
24
24
25
25
25
25
30
30
60
60
80
80
MAX.
4
7
7
10
10
15
15
15
15
15
15
15
15
40
40
45
45
60
60
80
80
100
100
200
200
250
250
S
Z
(%/K) at I
Z
MIN.
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
MAX.
0.09
0.10
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
I
Z
(mA)
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
5
5
5
REVERSE CURRENT
at REVERSE VOLTAGE
I
R
(µA)
MAX.
7
4
3
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
R
(V)
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
C10
C11
C12
C13
C15
C16
C18
C20
C22
C24
C27
C30
C33
C36
C39
C43
C47
C51
C56
C62
C68
C75
C82
C91
C100
C110
C120
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
77
85
94
104
114
1996 Jun 07
3
Philips Semiconductors
Preliminary specification
Voltage regulator diodes
BZG03 series
TYPE
No.
SUFFIX
(1)
WORKING VOLTAGE
V
Z
(V) at I
Z
MIN.
NOM.
130
150
160
180
200
220
240
270
MAX.
141
156
171
191
212
233
256
289
DIFFERENTIAL TEMPERATURE
TEST
RESISTANCE
COEFFICIENT CURRENT
r
dif
(Ω) at I
Z
TYP.
110
130
150
180
200
350
400
450
MAX.
300
300
350
400
500
750
850
1000
S
Z
(%/K) at I
Z
MIN.
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
MAX.
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
I
Z
(mA)
5
5
5
5
5
2
2
2
REVERSE CURRENT
at REVERSE VOLTAGE
I
R
(µA)
MAX.
1
1
1
1
1
1
1
1
V
R
(V)
100
110
120
130
150
160
180
200
C130
C150
C160
C180
C200
C220
C240
C270
Note
124
138
153
168
188
208
228
251
1. To complete the type number the suffix is added to the basic type number, e.g. BZG03-C130.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
note 2
Notes
1. Device mounted on an Al
2
O
3
printed-circuit board, 0.7 mm thick; thickness of Cu-layer
≥35 µm,
see Fig.5.
2. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.5.
For more information please refer to the
“General Part of associated Handbook”.
CONDITIONS
VALUE
25
100
150
UNIT
K/W
K/W
K/W
1996 Jun 07
4
Philips Semiconductors
Preliminary specification
Voltage regulator diodes
GRAPHICAL DATA
BZG03 series
handbook, halfpage
4
MBH451
10
4
handbook, halfpage
PZSM
(W)
10
3
MBH452
Ptot
(W)
3
2
10
2
1
0
0
100
T (°C)
200
10
10
−2
10
−1
1
tp (ms)
10
Solid line: tie-point temperature.
Dotted line: ambient temperature; device mounted on an Al
2
O
3
PCB
as shown in Fig.5.
T
j
= 25
°C
prior to surge.
Fig.3
Fig.2
Maximum total power dissipation as a
function of temperature.
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
handbook, halfpage
3
MBH453
50
IF
(A)
2
4.5
50
2.5
1
0
0
1
VF (V)
2
1.25
MSB213
T
j
= 25
°C.
Dimensions in mm.
Fig.4
Forward current as a function of forward
voltage; typical values.
Fig.5 Printed-circuit board for surface mounting.
1996 Jun 07
5
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