Product Bulletin JANTX, JANTXV, 2N5796U
September 1996
Surface Mount Dual PNP Transistor
Type JANTX, JANTXV, 2N5796U
.058 (1.47)
Features
•
Ceramic surface mount package
•
Hermetically sealed
•
Miniature package minimizes circuit
Absolute Maximum Ratings
(T
A
= 25
o
C unless otherwise noted)
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Emitter-Base Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 V
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mA
Operating and Storage (T
J
, T
stg
) . . . . . . . . . . . . . . . . . . . . . . . . . . . -65
o
C to +200
o
C
Power Dissipation (single transistor, no heat sink) . . . . . . . . . . . . . . . . . . . . . . . 0.5 W
Power Dissipation (total device) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W
board area required
•
Electrical performance similar to dual
2N2907A
•
Qualification per MIL-PRF-19500/496
Description
The JANTX2N5796U is a hermetically
sealed, ceramic surface-mount device,
consisting of two individual silicon PNP
transistors. The six pin ceramic package
is ideal for designs where board space
and device weight are important design
considerations.
Typical screening and lot acceptance
tests are provided on page 13-4. The
burn-in condition is V
CB
= 30 V, P
D
= 300
mW each transistor, T
A
= 25
o
C. Refer
to MIL-PRF-19500/496 for complete
requirements.
When ordering parts without processing,
do not use a JAN prefix.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
15-16
(972) 323-2200
Fax (972) 323-2396
Type JANTX, JANTXV, 2N5796U
Electrical Characterics
(T
A
= 25
o
C unless otherwise noted)
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO1
I
CBO2
I
EBO
h
FE1
h
FE2
h
FE3
h
FE4
h
FE7
h
FE5
h
FE6
V
CE(SAT)1
V
CE(SAT)2
V
BE(SAT)1
V
BE(SAT)2
h
fe
C
obo
C
ibo
t
on
t
off
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Forward Current Transfer Ratio
Forward Current Transfer Ratio
Forward Current Transfer Ratio
Forward Current Transfer Ratio
Forward Current Transfer Ratio
Forward Current Transfer Ratio
Forward Current Transfer Ratio
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
Open Circuit Output Capacitance
Input Capacitance
Turn-On Time
Turn-Off Time
MIN MAX UNIT
75
60
5
10
10
100
75
100
100
100
40
50
50
0.4
1.6
1.3
2.6
2
10
8
25
50
140
pF
pF
ns
ns
V
V
V
V
300
V
V
V
nA
µA
nA
I
C
= 10
µA
I
C
= 10 mA
(1)
I
E
= 10
µA
V
CB
= 50 V
TEST CONDITIONS
V
BC
= 50 V, T
A
= 150
o
C
V
EB
= 3 V
V
CE
= 10 V, I
C
= 100
µA
VCE = 10 V, I
C
= 1.0 mA
V
CE
= 10 V, I
C
= 10 mA
(1)
V
CE
= 10 V, I
C
= 150 mA
(1)
V
CE
= 10 V, I
C
= 150 mA, T
A
= -55
o
C
(1)
V
CE
= 10 V, I
C
= 300 mA
(1)
V
CE
= 1.0 V, I
C
= 150 mA
(1)
I
C
= 150 mA, I
B
= 15 mA
(1)
I
C
= 500 mA, I
B
= 50 mA
(1)
I
C
= 150 mA, I
B
= 15 mA
(1)
I
C
= 500 mA, I
B
= 50 mA
(1)
V
CE
= 20 V, I
C
= 20 mA, f = 100 MHz
V
CB
= 10 V, I
E
= 0, 100 kHz
≤
f
≤
1 MHz
V
EB
= 2.0 V, I
E
= 0, 100 kHz
≤
f
≤
1 MHz
V
CC
= 30 V, I
C
= 150 mA, I
B1
= 15 mA
V
CC
= 30 V, I
C
= 150 mA, I
B1
= I
B2
= 15 mA,
PW = 200 ns
(1) Pulsed Test: Pulse Width = 300
µs ±50,
1-2 % Duty Cycle.
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
(972)323-2200
Fax (972)323-2396
15-17
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