AP2310GG-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Lower Gate Charge
▼
Fast Switching Characteristic
▼
Simple Drive Requirement
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
60V
90mΩ
2.7A
S
D
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
SOT-89
D
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
3
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
60
+20
2.7
2.2
10
1.25
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
100
Unit
℃/W
Data and specifications subject to change without notice
1
201010121
AP2310GG-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=2.5A
V
GS
=4.5V, I
D
=1.5A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
2
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=2.5A
V
DS
=48V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=2.5A
V
DS
=48V
V
GS
=4.5V
V
DS
=30V
I
D
=1A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=15V
f=1.0MHz
Min.
60
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
7
-
-
6.5
1.5
3.5
5
5
17
4
550
70
50
Max. Units
-
90
120
3
-
10
+100
10.5
-
-
-
-
-
-
880
-
-
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Test Conditions
I
S
=1A, V
GS
=0V
I
S
=2A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
23
23
Max. Units
1.3
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mount on FR4 board, t < 10s.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2310GG-HF
10
10
T
A
=25 C
8
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
7.0V
5.0V
4.5V
T
A
=150
o
C
8
10V
7.0V
5.0V
4.5V
6
6
V
GS
=3.0V
4
V
GS
= 3.0V
4
2
2
0
0
2
4
6
8
0
0
2
4
6
8
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
110
2.4
I
D
= 1.5 A
T
A
=25
o
C
100
2.0
I
D
=2.5A
V
GS
=10V
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
1.6
90
1.2
80
0.8
70
2
4
6
8
10
0.4
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
3
I
D
=250uA
Normalized V
GS(th)
(V)
1.2
1.4
1.2
2
I
S
(A)
T
j
=150
o
C
T
j
=25
o
C
0.8
1
0.4
0
0
0.2
0.4
0.6
0.8
1
0
-50
0
50
100
150
V
SD
, Source -to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2310GG-HF
10
800
f=1.0MHz
I
D
= 2.5 A
V
GS
, Gate to Source Voltage (V)
8
600
6
C (pF)
V
DS
= 30V
V
DS
= 36V
V
DS
= 48V
C
iss
400
4
200
2
C
oss
C
rss
0
0
0
2
4
6
8
10
12
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
10
Operation in this
area limited by
R
DS(ON)
Normalized Thermal Response (R
thjc
)
0.2
0.1
100us
1ms
10ms
100ms
0.1
I
D
(A)
0.05
1
0.02
0.01
P
DM
0.01
t
T
Single Pulse
0.1
T
A
=25
o
C
Single Pulse
0.01
0.01
0.1
1
10
1s
DC
100
1000
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Rthja=100℃/W
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
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