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Datasheet> 器件分类 > 存储> 存储> WEDPN16M72VR-133B3I

WEDPN16M72VR-133B3I: 产品描述Synchronous DRAM, 16MX72, 5.5ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219; 产品类别存储存储; 制造商Microsemi; 官网地址https://www.microsemi.com

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WEDPN16M72VR-133B3I概述

Synchronous DRAM, 16MX72, 5.5ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219

WEDPN16M72VR-133B3I规格参数

参数名称	属性值
Objectid	8095300119
包装说明	BGA,
Reach Compliance Code	compliant
ECCN代码	EAR99
访问模式	FOUR BANK PAGE BURST
最长访问时间	5.5 ns
其他特性	AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED
JESD-30 代码	S-PBGA-B219
长度	21.1 mm
内存密度	1207959552 bit
内存集成电路类型	SYNCHRONOUS DRAM
内存宽度	72
功能数量	1
端口数量	1
端子数量	219
字数	16777216 words
字数代码	16000000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	16MX72
封装主体材料	PLASTIC/EPOXY
封装代码	BGA
封装形状	SQUARE
封装形式	GRID ARRAY
座面最大高度	2.64 mm
自我刷新	YES
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子形式	BALL
端子节距	1.27 mm
端子位置	BOTTOM
宽度	21.1 mm

WEDPN16M72VR-133B3I相似产品对比

	WEDPN16M72VR-133B3I	WEDPN16M72VR-133B3M	WEDPN16M72VR-100B3M	WEDPN16M72VR-100B3C	WEDPN16M72VR-100B3I	WEDPN16M72VR-125B3I	WEDPN16M72VR-125B3M
描述	Synchronous DRAM, 16MX72, 5.5ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219	Synchronous DRAM, 16MX72, 5.5ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219	Synchronous DRAM, 16MX72, 6ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219	Synchronous DRAM, 16MX72, 6ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219	Synchronous DRAM, 16MX72, 6ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219	Synchronous DRAM, 16MX72, 5.8ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219	Synchronous DRAM, 16MX72, 5.8ns, CMOS, PBGA219, 21 X 21 MM, PLASTIC, BGA-219
Objectid	8095300119	8095300120	8095300114	8095300112	8095300113	8095300116	8095300117
包装说明	BGA,	BGA,	BGA,	BGA,	BGA,	BGA,	BGA,
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
最长访问时间	5.5 ns	5.5 ns	6 ns	6 ns	6 ns	5.8 ns	5.8 ns
其他特性	AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED	AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED	AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED	AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED	AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED	AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED	AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED
JESD-30 代码	S-PBGA-B219	S-PBGA-B219	S-PBGA-B219	S-PBGA-B219	S-PBGA-B219	S-PBGA-B219	S-PBGA-B219
长度	21.1 mm	21.1 mm	21.1 mm	21.1 mm	21.1 mm	21.1 mm	21.1 mm
内存密度	1207959552 bit	1207959552 bit	1207959552 bit	1207959552 bit	1207959552 bit	1207959552 bit	1207959552 bit
内存集成电路类型	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
内存宽度	72	72	72	72	72	72	72
功能数量	1	1	1	1	1	1	1
端口数量	1	1	1	1	1	1	1
端子数量	219	219	219	219	219	219	219
字数	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words
字数代码	16000000	16000000	16000000	16000000	16000000	16000000	16000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	85 °C	125 °C	125 °C	70 °C	85 °C	85 °C	125 °C
最低工作温度	-40 °C	-55 °C	-55 °C	-	-40 °C	-40 °C	-55 °C
组织	16MX72	16MX72	16MX72	16MX72	16MX72	16MX72	16MX72
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	BGA	BGA	BGA	BGA	BGA	BGA	BGA
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY	GRID ARRAY
座面最大高度	2.64 mm	2.64 mm	2.64 mm	2.64 mm	2.64 mm	2.64 mm	2.64 mm
自我刷新	YES	YES	YES	YES	YES	YES	YES
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	MILITARY	MILITARY	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	MILITARY
端子形式	BALL	BALL	BALL	BALL	BALL	BALL	BALL
端子节距	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
宽度	21.1 mm	21.1 mm	21.1 mm	21.1 mm	21.1 mm	21.1 mm	21.1 mm

WEDPN16M72VR-133B3I

WEDPN16M72VR-133B3I概述

WEDPN16M72VR-133B3I规格参数

WEDPN16M72VR-133B3I相似产品对比

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