Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Zener working voltage range:
3.6 to 270 V for 46 types
•
Transient suppressor stand-off
voltage range: 6.2 to 430 V
for 45 types
•
Supplied in 8 mm embossed tape.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
P
tot
PARAMETER
total power dissipation
BZD27-C3V6 to -C6V8
BZD27-C7V5 to -C510
P
tot
total power dissipation
BZD27-C3V6 to -C6V8
BZD27-C7V5 to -C510
P
ZSM
non-repetitive peak reverse
power dissipation
BZD27-C3V6 to -C6V8
BZD27-C7V5 to -C510
P
RSM
non-repetitive peak reverse
power dissipation
BZD27-C7V5 to -C510
T
stg
storage temperature
BZD27-C3V6 to -C6V8
BZD27-C7V5 to -C510
T
j
junction temperature
BZD27-C3V6 to -C6V8
BZD27-C7V5 to -C510
−65
−65
−65
−65
10/1000
µs
exponential pulse (see Fig.8);
T
j
= 25
°C
prior to surge
−
PCB mounted (see Fig.7)
T
amb
= 60
°C;
see Fig.2
T
amb
= 55
°C;
see Fig.3
t
p
= 100
µs;
square pulse;
T
j
= 25
°C
prior to surge; see Figs.4 and 5
−
−
−
−
CONDITIONS
T
tp
= 105
°C;
see Figs 2 and 3
−
−
MIN.
MAM249
BZD27 series
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
DESCRIPTION
Cavity free cylindrical glass SOD87
package through Implotec™
(1)
technology. This package is
handbook, 4 columns
k
a
Fig.1 Simplified outline (SOD87) and symbol.
MAX.
1.7
2.3
0.8
0.8
UNIT
W
W
W
W
300
300
W
W
150
+200
+175
+200
+175
W
°C
°C
°C
°C
1996 Jun 10
2
Philips Semiconductors
Product specification
Voltage regulator diodes
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
I
F
= 0.2 A; see Fig.6
MIN.
−
BZD27 series
MAX.
1.2
V
UNIT
Per type when used as voltage regulator diodes
T
j
= 25
°C
unless otherwise specified.
TYPE
No.
SUFFIX
(1)
WORKING VOLTAGE
V
Z
(V) at I
Z
MIN.
NOM.
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
MAX.
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
DIFFERENTIAL TEMPERATURE
TEST
RESISTANCE
COEFFICIENT CURRENT
r
dif
(Ω) at I
Z
TYP.
4
4
4
3
3
2
2
1
1
1
2
2
4
4
5
5
6
6
6
6
7
7
8
8
21
21
24
24
MAX.
8
8
7
7
6
4
3
3
2
2
4
4
7
7
10
10
15
15
15
15
15
15
15
15
40
40
45
45
3
S
Z
(%/K) at I
Z
MIN.
−0.14
−0.14
−0.12
−0.10
−0.08
−0.04
−0.01
0.00
0.00
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
MAX.
−0.04
−0.04
−0.02
0.00
−0.02
0.04
0.06
0.07
0.07
0.08
0.08
0.09
0.10
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
I
Z
(mA)
100
100
100
100
100
100
100
100
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
REVERSE CURRENT
at REVERSE VOLTAGE
I
R
(µA)
MAX.
100
50
25
10
5
10
5
10
50
10
10
7
4
3
2
1
1
1
1
1
1
1
1
1
1
1
1
1
V
R
(V)
1
1
1
1
1
2
2
3
3
3
5
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
C3V6
C3V9
C4V3
C4V7
C5V1
C5V6
C6V2
C6V8
C7V5
C8V2
C9V1
C10
C11
C12
C13
C15
C16
C18
C20
C22
C24
C27
C30
C33
C36
C39
C43
C47
1996 Jun 10
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
MEMS传感器
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