DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D119
BZD142
ZenBlock
TM
; zener with integrated
blocking diode
Preliminary specification
2000 Dec 19
Philips Semiconductors
Preliminary specification
ZenBlock
TM
; zener with integrated blocking diode
FEATURES
•
Zener and blocking function in one package
•
Glass passivated
•
Low leakage current
•
Excellent stability
•
Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass package through Implotec
TM(1)
technology. This package is hermetically sealed and
fatigue free as coefficients of expansion of all used parts
are matched.
(1) Implotec is a trademark of Philips.
BZD142
MGU216
Fig.1 Simplified outline (SOD81) and symbol.
LIMITING VALUES
SYMBOL
T
stg
T
j
Zener
P
tot
total power dissipation
T
tp
= 25
°C;
lead length 10 mm;
see Fig.5
−
2.1
W
PARAMETER
storage temperature
junction temperature
CONDITIONS
MIN.
−65
−65
MAX.
+150
+150
UNIT
°C
°C
Blocking diode
V
R
E
RSM
continuous reverse voltage
non-repetitive peak reverse
avalanche energy
L = 120 mH; T
j
= T
j(max)
prior to
surge; inductive load switched off
−
−
600
10
V
mJ
2000 Dec 19
2
Philips Semiconductors
Preliminary specification
ZenBlock
TM
; zener with integrated blocking diode
ELECTRICAL CHARACTERISTICS ZENER/TVS
T
j
= 25
°C
unless otherwise specified.
WORKING VOLTAGE
TYPE
NUMBER
SUFFIX
(1)
TEMPERATURE
COEFFICIENT
S
Z
(%/K) at I
test
MIN.
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.07
MAX.
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
10
10
10
5
5
5
5
5
5
5
TEST
CURRENT
CLAMPING
VOLTAGE
V
(CL)R
(V)
MAX.
94.4
103.5
114
126
139
152
167
185
204
224
at I
RSM
(A)
(note
2)
106
0.97
0.88
0.79
0.72
0.66
0.60
0.54
0.49
0.45
BZD142
REVERSE CURRENT
at STAND-OFF
VOLTAGE
IR (µA)
at V
R
(V)
MAX.
5
5
5
5
5
5
5
5
5
5
56
62
68
75
82
91
100
110
120
130
V
Z
(V) at I
Z
(see Fig.4)
MIN.
NOM.
68
75
82
91
100
110
120
130
150
160
MAX.
75
82
90
100
110
121
132
143
165
171
I
test
(mA)
68
75
82
91
100
110
120
130
150
160
Notes
61
68
74
82
90
99
108
117
135
149
1. To complete the type number the suffix is added to the basic type number, e.g. BZD142-68.
2. Non-repetitive peak reverse current in accordance with
“IEC 60060-1, Section 8”
(10/1000
µs
pulse); see Fig.5.
ELECTRICAL CHARACTERISTICS BLOCKING CODE
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)R
I
R
C
d
PARAMETER
reverse avalanche
breakdown voltage
reverse current
diode capacitance
CONDITIONS
I
R
= 0.1 mA
V
R
= 600 V
V
R
= 600 V; T
j
= 150
°C
f = 1 MHz; V
R
= 0 V;
see Fig.4
MIN.
700
−
−
−
−
−
−
15
TYP.
−
5
100
−
MAX.
V
µA
µA
pF
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.2.
For more information please refer to the
“General Part of associated Handbook”.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
lead length = 10 mm
note 1
VALUE
60
120
UNIT
K/W
K/W
2000 Dec 19
3
Philips Semiconductors
Preliminary specification
ZenBlock
TM
; zener with integrated blocking diode
GRAPHICAL DATA
MGU214
BZD142
handbook, halfpage
3
10
2
handbook, halfpage
MBL107
Ptot
(W)
2
Cd
(pF)
10
1
0
0
100
T (°C)
200
1
1
10
10
2
VR (V)
10
3
Solid line: tie-point temperature; lead length = 10 mm.
Dotted line: ambient temperature; printed-circuit board mounted as
shown in Fig.4.
f = 1 MHz; T
j
= 25
°C.
Fig.2
Maximum total power dissipation as a
function of temperature.
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
50
25
IRSM
handbook, halfpage
(%)
100
90
7
50
50
2
3
10
t
t1
MGA200
t2
MGD521
In accordance with
“IEC 60060-1, Section 8”.
t
1
= 10
µs.
t
2
= 1000
µs.
Dimensions in mm.
Fig.5
Fig.4 Device mounted on a printed-circuit board.
Non-repetitive peak reverse current pulse
definition.
2000 Dec 19
4
Philips Semiconductors
Preliminary specification
ZenBlock
TM
; zener with integrated blocking diode
PACKAGE OUTLINE
Hermetically sealed glass package;
Implotec
TM(1)
technology; axial leaded; 2 leads
BZD142
SOD81
G1
(2)
k
a
b
D
L
G
L
DIMENSIONS (mm are the original dimensions)
UNIT
mm
b
max.
0.81
D
max.
2.15
G
max.
3.8
G1
max.
5
L
min.
28
0
1
scale
2 mm
Notes
1. Implotec is a trademark of Philips.
2. The marking band indicates the cathode.
OUTLINE
VERSION
SOD81
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-06-20
2000 Dec 19
5
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