DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD127
BZA800A-series
Quadruple ESD transient voltage
suppressor
Preliminary specification
2000 Apr 18
Philips Semiconductors
Preliminary specification
Quadruple ESD transient voltage
suppressor
FEATURES
•
ESD rating >8 kV, according to IEC1000-4-2
•
SOT353 (SC-88A) surface mount package
•
Common anode configuration
APPLICATIONS
•
Computers and peripherals
•
Audio and video equipment
•
Communication systems
•
Medical equipment.
DESCRIPTION
handbook, halfpage
BZA800A-series
PINNING
PIN
1
2
3
4
5
cathode 1
common anode
cathode 2
cathode 3
cathode 4
DESCRIPTION
3
2
1
1
c2
b2
3
Monolithic transient voltage suppressor diode in a five lead
SOT353 (SC-88A) package for 4-bit wide ESD transient
suppression.
MARKING
TYPE NUMBER
BZA856A
BZA862A
BZA868A
BZA820A
MARKING CODE
Z1
Z2
Z3
Z4
c1/e2
2
4
5
b1
e1
4
Top view
5
MAM212
Fig.1 Simplified outline SOT353 (SC-88A)
2000 Apr 18
2
Philips Semiconductors
Preliminary specification
Quadruple ESD transient voltage suppressor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Per diode
I
Z
I
F
I
FSM
P
tot
P
ZSM
working current
continuous forward current
total power dissipation
non repetitive peak reverse power
dissipation
BZA856A, BZA862A, BZA868A
BZA820A
Tstg
Tj
Notes
1. DC working current limited by P
tot max
.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
all diodes loaded
storage temperature
junction temperature
T
a
= 25
°C
T
a
= 25
°C
T
a
= 25
°C
square pulse; t
p
= 1 ms; see Fig.3
−
−
−
−
−
−
PARAMETER
CONDITIONS
BZA800A-series
MIN.
MAX.
UNIT
note 1
200
3.75
335
mA
mA
A
mW
non-repetitive peak forward current t
p
= 1 ms; square pulse
24
17
+150
150
W
W
°C
°C
−65
−
VALUE
370
UNIT
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
BZA856A
BZA862A
BZA868A
BZA820A
T
j
= 25 °C unless otherwise specified
TYPE
WORKING VOLTAGE
V
Z
(V)
at I
Z
= 1 mA
MIN.
BZA856A
BZA862A
BZA868A
BZA820A
5.32
5.89
6.46
19
TYP.
5.6
6.2
6.8
20
MAX.
5.88
6.51
7.14
21
DIFFERENTIAL
RESISTANCE
r
dif
(Ω)
at I
Z
= 1 mA
MAX.
400
300
200
125
TEMP. COEFF.
S
Z
(mV/K)
at I
Z
= 1 mA
TYP.
−0.2
1.8
3
16
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
V
R
= 0 V
MAX.
240
200
180
50
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A) at t
p
= 1 ms;
T
amb
= 25
°C
MAX.
3.2
2.9
2.6
0.6
V
R
= 3 V
V
R
= 4 V
V
R
= 4.3 V
V
R
= 15 V
2000
700
200
100
nA
nA
nA
nA
I
F
= 200 mA
CONDITIONS
MAX.
1.3
UNIT
V
2000 Apr 18
3
Philips Semiconductors
Preliminary specification
Quadruple ESD transient voltage suppressor
BZA800A-series
10
I
ZSM
(A)
BZA856A
BZA862A
BZA868A
100
BZA856A, BZA862A, BZA868A
P
ZSM
(W)
BZA820A
BZA820A
1
10
0.1
0.01
0.1
1
t
p
(ms)
10
1
0.01
0.1
1
t
p
(ms)
10
P
ZSM
= V
ZSM
×
I
ZSM
.
V
ZSM
is the non-repetitive peak reverse voltage at I
ZSM
.
Fig.2
Maximum non-repetitive peak reverse
current as a function of pulse time.
Fig.3
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
200
C
d
(pF)
160
120
BZA856A
80
BZA862A
BZA868A
40
BZA820A
0
0
5
10
V
R
(V)
15
T
j
= 25
°
C; f = 1 MHz.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2000 Apr 18
4
Philips Semiconductors
Preliminary specification
Quadruple ESD transient voltage suppressor
BZA800A-series
ESD Tester
RZ
450 ohm
RG 223/U
50 ohm Coax
10X
Attenuator
note 1
Digitizing
Oscilloscope
CZ
50 ohm
IEC 1000-4-2 network
C
Z
= 150 pF; R
Z
= 330
Ω
Note 1: attenuator is only used for open
socket high voltage measurements
1/4 BZA800A
Vertical Scale = 100 V/Div
Horizontal Scale = 50 ns/Div
B ZA 8 20A
V ertica l S cale =10 V /Div
H orizontal Sc ale = 50 ns/D iv
G ND -4
B ZA 8 68A
G ND -3
B ZA 8 62A
G ND -2
B ZA 8 56A
G ND -1
GND
unclamped +1 kV ESD voltage waveform
(IEC 1000-4-2 network)
clamped +1 kV ESD voltage waveform
(IEC 1000-4-2 network)
GND
GN D
Vertical Scale =10 V /D iv
Vertical Scale =10 V /D iv
Horizontal Scale = 50 ns/D iv
Horizontal Scale = 50 ns/D iv
Vertical Scale = 100 V/Div
Horizontal Scale = 50 ns/Div
unclamped
−
1 kV ESD voltage waveform
(IEC 1000-4-2 network)
clamped
−
1 kV ESD voltage waveform
(IEC 1000-4-2 network)
Fig.5 ESD clamping test set-up and waveforms.
2000 Apr 18
5
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