DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D302
BZA462A
Quadruple ESD transient voltage
suppressor
Product specification
Supersedes data of 1998 Oct 30
1999 May 25
Philips Semiconductors
Product specification
Quadruple ESD transient voltage suppressor
FEATURES
•
ESD rating >15 kV, according to IEC1000-4-2
•
SOT457 surface mount package
•
Common anode configuration
•
Non-clamping range
−0.5
to 6.2 V
•
Maximum reverse peak power dissipation:
24 W at t
p
= 1 ms
•
Maximum clamping voltage at peak pulse current:
9 V at I
ZSM
= 2.66 A.
APPLICATIONS
•
Computers and peripherals
•
Audio and video equipment
•
Communication systems
•
Medical equipment.
1
2
3
MAM357
BZA462A
PINNING
PIN
1
2
3
4
5
6
cathode 1
common
cathode 2
cathode 3
common
cathode 4
DESCRIPTION
handbook, halfpage
6
5
4
1
3
4
6
2
5
DESCRIPTION
Monolithic transient voltage suppressor diode in a six lead
SOT457 (SC-74) package for 4-bit wide ESD transient
suppression at 6.2 V level.
Top view
Marking code:
Z2t.
Fig.1 Simplified outline (SOT457) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Per diode
I
Z
I
F
I
FSM
I
ZSM
P
tot
P
ZSM
T
stg
T
j
Notes
1. T
s
is the temperature at the soldering point of the anode pin.
2. DC working current limited by P
tot max
.
working current
continuous forward current
non-repetitive peak forward current
non-repetitive peak reverse current
total power dissipation
non repetitive peak reverse power
dissipation
storage temperature
junction temperature
T
s
= 60
°C;
note 1
T
s
= 60
°C
t
p
= 1 ms; square pulse
t
p
= 1 ms; square pulse; see Fig.2
T
s
= 60
°C;
see Fig.3
square pulse; t
p
= 1 ms; see Fig.4
−
−
−
−
−
−
−65
−65
note 2
100
3.75
2.66
720
24
+150
+150
mA
mA
A
A
mW
W
°C
°C
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
1999 May 25
2
Philips Semiconductors
Product specification
Quadruple ESD transient voltage suppressor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
CONDITIONS
one or more diodes loaded
BZA462A
VALUE
125
UNIT
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
Z
V
F
V
ZSM
I
R
r
dif
S
Z
C
d
working voltage
forward voltage
non-repetitive peak reverse voltage
reverse current
differential resistance
temperature coefficient of working
voltage
diode capacitance
I
Z
= 1 mA
I
F
= 200 mA
I
ZSM
= 3.5 A; t
p
= 1 ms
V
R
= 4 V
I
Z
= 1 mA
I
Z
= 5 mA
see Fig.5
V
R
= 0; f = 1 MHz
V
R
= 4 V; f = 1 MHz
−
−
−
−
200
110
pF
pF
5.89
−
−
−
−
−
6.2
−
−
−
−
1.2
6.51
1.3
9
700
300
−
V
V
V
nA
Ω
mV/K
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
1999 May 25
3
Philips Semiconductors
Product specification
Quadruple ESD transient voltage suppressor
BZA462A
handbook, halfpage
10
MBK479
1000
handbook, halfpage
Ptot
(mW)
800
MDA198
600
IZSM
(A)
400
200
1
10
−1
1
tp (ms)
10
0
0
50
100
150
Ts (
o
C)
200
All diodes loaded.
Fig.2
Maximum non-repetitive peak reverse
current as a function of pulse time.
Fig.3 Power derating curve.
10
2
handbook, halfpage
MBK481
handbook, halfpage
200
Cd
MBK480
(pF)
PZSM
(W)
160
120
10
80
40
1
10
−1
0
1
tp (ms)
10
0
1
2
3
4
5
VR (V)
6
P
ZSM
= V
ZSM
×
I
ZSM
.
V
ZSM
is the non-repetitive peak reverse voltage at I
ZSM
.
T
j
= 25
°C;
f = 1 MHz.
Fig.4
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
1999 May 25
4
Philips Semiconductors
Product specification
Quadruple ESD transient voltage suppressor
BZA462A
ESD TESTER
RZ
CZ
450
Ω
RG 223/U
50
Ω
coax
10×
ATTENUATOR
note 1
DIGITIZING
OSCILLOSCOPE
50
Ω
Note 1: attenuator is only used for open
socket high voltage measurements
IEC 1000-4-2 network
CZ = 150 pF; RZ = 330
Ω
1/4 BZA462A
vertical scale = 100 V/Div
horizontal scale = 50 ns/Div
vertical scale = 10 V/Div
horizontal scale = 50 ns/Div
GND
GND
unclamped
+1
kV ESD voltage waveform
(IEC 1000−4−2 network)
clamped
+1
kV ESD voltage waveform
(IEC 1000−4−2 network)
GND
GND
vertical scale = 100 V/Div
horizontal scale = 50 ns/Div
unclamped
−1
kV ESD voltage waveform
(IEC 1000−4−2 network)
vertical scale = 10 V/Div
horizontal scale = 50 ns/Div
clamped
−1
kV ESD voltage waveform
(IEC 1000−4−2 network)
MBK478
Fig.6 ESD clamping test set-up and waveforms.
1999 May 25
5
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
