DISCRETE SEMICONDUCTORS
DATA SHEET
ndbook, halfpage
M3D184
BZA109
9-fold ESD transient voltage
suppressor
Product specification
Supersedes data of 1997 Oct 27
File under Discrete Semiconductors, SC01
1997 Dec 01
Philips Semiconductors
Product specification
9-fold ESD transient voltage suppressor
FEATURES
•
ESD rating >8 kV, according to
IEC1000-4-2
•
SOT163-1 surface mount package
•
Common anode configuration
•
Non-clamping range 0.5 to 6.8 V
•
Maximum non-repetitive peak
reverse power dissipation: 25 W
at t
p
= 1 ms
•
Maximum clamping voltage at peak
pulse current: 10 V at I
ZSM
= 2.5 A.
APPLICATIONS
•
For 9-bit wide undershoot/
overshoot clamping and fast ESD
transient suppression in:
– Computers and peripherals
– Audio and video equipment
– Business machines
– Communication systems
– Medical equipment.
IN8
9
12 OUT8
11 OUT9
IN9 10
handbook, 4 columns
BZA109
PINNING
PIN
1 to 5
6 and 15
7 to 10
11 to 14
16 to 20
DESCRIPTION
input (IN1 to IN5)
common anode (GND)
input (IN6 to IN9)
output (OUT9 to OUT6)
output (OUT5 to OUT1)
DESCRIPTION
9-fold monolithic transient voltage
suppressor in an SO20; SOT163-1
surface mount package. The device is
ideal in situations where board space
is a premium.
IN1
IN2
IN3
IN4
IN5
GND
IN6
IN7
1
2
3
4
5
20 OUT1
19 OUT2
18 OUT3
17 OUT4
16 OUT5
20
19
18
17
16
15
14
13
12
11
SO20
6
7
8
15 GND
14 OUT6
13 OUT7
MBK268
1
2
3
4
5
6
7
8
9
10
Fig.1 Pin configuration for SO20 (SOT163-1) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Per diode
I
Z
I
F
I
FT
I
FSM
I
ZSM
P
tot
P
ZSM
T
stg
T
j
Notes
1. Current is flowing from input to corresponding output.
2. One or more diodes loaded.
1997 Dec 01
2
working current
continuous forward current
feed-through current
non-repetitive peak forward current
non-repetitive peak reverse current
total power dissipation
non-repetitive peak reverse power
dissipation
storage temperature
operating junction temperature
T
amb
= 25
°C
T
amb
= 25
°C
T
amb
= 25
°C;
note 1
t
p
= 1 ms; square pulse
t
p
= 1 ms; square pulse; see Fig.2
T
amb
≤
25
°C;
note 2; see Fig.3
t
p
= 1 ms; square pulse; see Fig.4
−
−
−
−
−
−
−
−65
−65
20
100
100
4.5
2.5
1.25
25
+150
+150
mA
mA
mA
A
A
W
W
°C
°C
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Philips Semiconductors
Product specification
9-fold ESD transient voltage suppressor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
one or more diodes loaded
BZA109
VALUE
100
UNIT
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
Z
V
F
V
ZSM
I
H
r
dif
S
Z
C
d
working voltage
forward voltage
non-repetitive peak reverse voltage
input high current
differential resistance
temperature coefficient of
working voltage
diode capacitance
I
Z
= 250
µA
I
F
= 100 mA
I
ZSM
= 2.5 A; t
p
= 1 ms
V
IN
= 5.25 V
I
Z
= 250
µA
I
Z
= 5 mA
see Fig.5
V
R
= 0; f = 1 MHz
V
R
= 5.25 V; f = 1 MHz
−
−
−
−
200
100
pF
pF
6.4
−
−
−
−
−
6.8
−
−
−
−
3
7.2
1.1
10
0.5
100
−
V
V
V
µA
Ω
mV/K
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
1997 Dec 01
3
Philips Semiconductors
Product specification
9-fold ESD transient voltage suppressor
GRAPHICAL DATA
BZA109
handbook, halfpage
10
MBK269
handbook, halfpage
2.0
MBK393
IZSM
(A)
Ptot
(W)
1.5
1.0
0.5
1
10
−1
1
tp (ms)
10
0
0
50
100
150
200
Tamb (°C)
One or more diodes loaded.
Fig.2
Maximum non-repetitive peak reverse
current as a function of pulse time.
Fig.3 Power derating curve.
handbook, halfpage
10
2
MBK270
handbook, halfpage
150
MBK272
PZSM
(W)
Cd
(pF)
100
50
10
10
−1
0
1
tp (ms)
10
0
2
4
VR (V)
6
P
ZSM
= V
ZSM
×
I
ZSM
.
V
ZSM
is the non-repetitive peak reverse voltage at I
ZSM
.
T
j
= 25
°C;
f = 1 MHz.
Fig.4
Maximum non-repetitive peak reverse power
dissipation as a function of pulse duration
(square pulse).
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
1997 Dec 01
4
Philips Semiconductors
Product specification
9-fold ESD transient voltage suppressor
BZA109
handbook, full pagewidth
ESD TESTER
RZ
CZ
450
Ω
RG 223/U
50
Ω
coax
10×
ATTENUATOR
note 1
DIGITIZING
OSCILLOSCOPE
CH1
50
Ω
IEC 1000-4-2 network
CZ = 150 pF; RZ = 330
Ω
450
Ω
input
output
RG 223/U
50
Ω
coax
10×
ATTENUATOR
note 1
DIGITIZING
OSCILLOSCOPE
CH2
50
Ω
1/9 BZA109
vertical scale = 100 V/Div
horizontal scale = 50 ns/Div
Note 1: attenuator is only used for open
socket high voltage measurements
vertical scale = 10 V/Div
horizontal scale = 50 ns/Div
output
GND
input
GND
GND
unclamped
+1
kV ESD voltage waveform
(IEC1000−4−2 network)
clamped
+1
kV ESD voltage waveform
(IEC1000−4−2 network)
GND
vertical scale = 10 V/Div
horizontal scale = 50 ns/Div
GND
input
vertical scale = 100 V/Div
horizontal scale = 50 ns/Div
unclamped
−1
kV ESD voltage waveform
(IEC1000−4−2 network)
GND
output
clamped
−1
kV ESD voltage waveform
(IEC1000−4−2 network)
MBK273
Fig.6 ESD clamping test set-up and waveforms.
1997 Dec 01
5
stm32/stm8
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