DISCRETE SEMICONDUCTORS
DATA SHEET
M3D354
BYX134G
High-voltage car ignition diode
Product specification
Supersedes data of 1998 Dec 04
2000 Feb 29
Philips Semiconductors
Product specification
High-voltage car ignition diode
FEATURES
•
Glass passivated
•
High maximum operating temperature
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy absorption capability.
APPLICATIONS
•
Car ignition systems
•
Automotive applications with extreme temperature
requirements.
handbook, halfpage
k
BYX134G
DESCRIPTION
Rugged glass package, using a high temperature alloyed
construction.
The SOD61AC2 is hermetically sealed and fatigue free as
coefficients of expansion of all used parts are matched.
The package is designed to be used in an insulating
medium such as resin, oil or SF6 gas.
The BYX134G is marked with a blue cathode band on the
body.
a
MBK907
Fig.1 Simplified outline (SOD61AC2) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
RRM
V
RWM
I
F(AV)
I
RSM
T
stg
T
j
T
j
PARAMETER
repetitive peak reverse voltage
crest working reverse voltage
average forward current
non-repetitive peak reverse current
storage temperature
junction temperature
junction temperature
continuous
max. 30 min.
t = 100
µs
triangular pulse;
T
j max
prior to surge
CONDITIONS
−
−
−
−
−65
−
−
MIN.
4
4
50
50
+200
175
200
MAX.
UNIT
kV
kV
mA
mA
°C
°C
°C
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
V
(BR)R
I
R
PARAMETER
forward voltage
reverse avalanche breakdown voltage
reverse current
CONDITIONS
I
F
= 10 mA
I
R
= 100
µA
V
R
= V
RWMmax
; T
j
= 175
°C
5
5.5
−
MIN.
7
7.5
30
MAX.
V
kV
µA
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
T
amb
= T
leads
; lead length = 10 mm
VALUE
90
UNIT
K/W
2000 Feb 29
2
Philips Semiconductors
Product specification
High-voltage car ignition diode
GRAPHICAL DATA
MGL548
BYX134G
handbook, halfpage
200
IF
(mA)
160
120
80
40
0
0
4
8
12
16
VF (V)
Dotted line: T
j
= 175
°C.
Solid line: T
j
= 25
°C.
20
Fig.2
Forward current as a function of maximum
forward voltage.
2000 Feb 29
3
Philips Semiconductors
Product specification
High-voltage car ignition diode
PACKAGE OUTLINE
Hermetically sealed glass package; axial leaded; 2 leads
BYX134G
SOD61AC2
k
(1)
a
b
D
L
G
L
DIMENSIONS (mm are the original dimensions)
UNIT
mm
b
0.6
D
max.
2.5
G
max.
8.3
L
min.
30.4
0
2.5
scale
5 mm
Note
1. The marking band indicates the cathode.
OUTLINE
VERSION
SOD61AC2
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
98-12-04
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
2000 Feb 29
4
Philips Semiconductors
Product specification
High-voltage car ignition diode
NOTES
BYX134G
2000 Feb 29
5
FPGA/CPLD
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