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BYWB29-50

产品描述8 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB
产品类别半导体    分立半导体   
文件大小77KB,共2页
制造商GE Sensing ( Amphenol Advanced Sensors )
官网地址http://www.vishay.com/
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BYWB29-50概述

8 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB

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BYWB29-50 THRU BYWB29-200
FAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage -
50 to 200 Volts
TO-263
Forward Current -
8.0 Amperes
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Glass passivated chip junction
Low power loss
Low leakage current
High surge current capability
Superfast recovery time for high efficiency
High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
0.380 (9.65)
0.420 (10.67)
0.245 (6.22)
MIN
K
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.320 (8.13)
0.360 (9.14)
1
K
2
0.575 (14.60)
0.625 (15.88)
0.047 (1.19)
0.055 (1.40)
SEATING
PLATE
-T-
0.090 (2.29)
0.110 (2.79)
0.018 (0.46)
0.025 (0.64)
0.027 (0.686)
0.037 (0.940)
0.080 (2.03)
0.110 (2.79)
MECHANICAL DATA
Case:
JEDEC TO-263AB molded plastic body
Terminals:
Plated lead solderable per MIL-STD-750,
Method 2026
Polarity:
As marked
Mounting Position:
Any
Weight:
0.08 ounce, 2.24 grams
0.095 (2.41)
0.100 (2.54)
PIN 1
K - HEATSINK
PIN 2
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
BYWB29-50 BYWB29-100 BYWB29-150 BYWB29-200
UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
C
=125°C
Peak forward surge current 10ms
single half sine-wave superimposed T
J
=150°C
Maximum instantaneous forward voltage at:
I
F
=20A, T
J
=25°C
I
F
=8A, T
J
=150°C
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance
(NOTE 2)
Maximum thermal resistance
(NOTE 3)
Operating and storage temperature range
T
C
=25°C
T
C
=100°C
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
50
35
50
100
70
100
8.0
100.0
150
105
150
200
140
200
Volts
Volts
Volts
Amps
Amps
V
F
1.3
0.8
10.0
500.0
25.0
45.0
3.0
-65 to +150
Volts
µA
ns
pF
°C/W
°C
I
R
t
rr
C
J
R
ΘJC
T
J
, T
STG
NOTES:
(1) Reverse recovery test conditions: I
F
=1A, V
R
=30V, di/dt=100A/µs, I
rr
=10%, I
RM
for measurement of t
rr
(2) Measured at 1.0 MH
Z
and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to case mounted on heatsink
4/98

BYWB29-50相似产品对比

BYWB29-50 BYWB29-150 BYWB29-100 BYWB29-200
描述 8 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB 8 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB

 
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