transistors RF bipolar W/anneal txarray 5X npn 16ld 3x3
参数名称 | 属性值 |
Manufacture | Intersil |
产品种类 Product Category | Transistors RF Bipol |
RoHS | Yes |
类型 Type | RF Bipolar Small Signal |
Transistor Polarity | NPN |
DC Collector/Base Gain hfe Mi | 40 at 10 mA at 2 V |
Maximum Operating Frequency | 8000 MHz (Typ) |
Collector- Emitter Voltage VCEO Max | 8 V |
Emitter- Base Voltage VEBO | 5.5 V |
Continuous Collector Curre | 0.065 A |
最大工作温度 Maximum Operating Temperature | + 125 C |
Power Dissipati | 150 mW |
Configurati | Qui |
封装 / 箱体 Package / Case | QFN EP |
系列 Packaging | Reel |
Maximum DC Collector Curre | 0.065 A |
最小工作温度 Minimum Operating Temperature | - 55 C |
工厂包装数量 Factory Pack Quantity | 6000 |
HFA3127RZ96 | HFA3127BZ96 | |
---|---|---|
描述 | transistors RF bipolar W/anneal txarray 5X npn 16ld 3x3 | transistors RF bipolar W/anneal txarray 5X npn 16n milel |
Manufacture | Intersil | Intersil |
产品种类 Product Category |
Transistors RF Bipol | Transistors RF Bipol |
RoHS | Yes | Yes |
类型 Type |
RF Bipolar Small Signal | RF Bipolar Small Signal |
Transistor Polarity | NPN | NPN |
DC Collector/Base Gain hfe Mi | 40 at 10 mA at 2 V | 40 at 10 mA at 2 V |
Maximum Operating Frequency | 8000 MHz (Typ) | 8000 MHz (Typ) |
Collector- Emitter Voltage VCEO Max | 8 V | 8 V |
Emitter- Base Voltage VEBO | 5.5 V | 5.5 V |
Continuous Collector Curre | 0.065 A | 0.065 A |
最大工作温度 Maximum Operating Temperature |
+ 125 C | + 125 C |
Power Dissipati | 150 mW | 150 mW |
Configurati | Qui | Qui |
封装 / 箱体 Package / Case |
QFN EP | SOIC-16 Narrow |
系列 Packaging |
Reel | Reel |
Maximum DC Collector Curre | 0.065 A | 0.065 A |
最小工作温度 Minimum Operating Temperature |
- 55 C | - 55 C |
工厂包装数量 Factory Pack Quantity |
6000 | 2500 |
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