c
Freescale Semiconductor
Technical Data
Document Number: MRF8P9210N
Rev. 0, 12/2011
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 920 to
960 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
•
Typical Doherty Single--Carrier W--CDMA Characterization Performance:
V
DD
= 28 Volts, I
DQA
= 750 mA, V
GSB
= 1.2 Vdc, P
out
= 63 Watts Avg.,
IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency
920 MHz
940 MHz
960 MHz
G
ps
(dB)
16.5
16.9
16.7
η
D
(%)
46.2
47.7
47.4
Output PAR
(dB)
6.2
6.0
5.8
ACPR
(dBc)
--31.3
--32.6
--34.4
MRF8P9210NR3
920-
-960 MHz, 63 W AVG., 28 V
SINGLE W-
-CDMA
RF POWER LDMOS TRANSISTOR
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 960 MHz, 253 Watts CW
(1)
Output Power (3 dB Input Overdrive from Rated P
out
), Designed for
Enhanced Ruggedness
•
Typical P
out
@ 3 dB Compression Point
≃
290 Watts
(2)
Features
•
Production Tested in a Symmetrical Doherty Configuration
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Large--Signal Load--Pull Parameters and Common Source
S--Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
Designed for Digital Predistortion Error Correction Systems
•
225°C Capable Plastic Package
•
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
CASE 2023-
-02
OM-
-780-
-4
PLASTIC
RF
inA
/V
GSA
3
1 RF
outA
/V
DSA
RF
inB
/V
GSB
4
2 RF
outB
/V
DSB
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(3,4)
CW Operation @ T
C
= 25°C
Derate above 25°C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
CW
Value
--0.5, +70
--6.0, +10
32, +0
--65 to +150
150
225
239
1.74
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. P3dB = P
avg
+ 7.0 dB where P
avg
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
3. Continuous use at maximum temperature will affect MTTF.
4. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
©
Freescale Semiconductor, Inc., 2011. All rights reserved.
MRF8P9210NR3
1
RF Device Data
Freescale Semiconductor, Inc.
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 65°C, 63 W CW, 28 Vdc, I
DQA
= 750 mA, V
GSB
= 1.2 Vdc, 960 MHz
Case Temperature 85°C, 200 W CW
(3)
, 28 Vdc, I
DQA
= 750 mA, V
GSB
= 1.2 Vdc, 960 MHz
Symbol
R
θJC
Value
(1,2)
0.53
0.35
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2
B
IV
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(4)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 70 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
(4)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 800
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DA
= 750 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 3.3 Adc)
V
GS(th)
V
GS(Q)
V
DS(on)
1.5
2.4
0.1
2.3
3.2
0.24
3.0
3.9
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(5,6)
(In Freescale Doherty Production Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
= 750 mA, V
GSB
= 1.2 Vdc, P
out
=
63 W Avg., f = 960 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
G
ps
η
D
PAR
ACPR
15.3
41.0
5.5
—
16.8
46.7
5.8
--35.5
18.3
—
—
--32.0
dB
%
dB
dBc
Typical Broadband Performance
(In Freescale Doherty Characterization Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
= 750 mA,
V
GSB
= 1.2 Vdc, P
out
= 63 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Frequency
920 MHz
940 MHz
960 MHz
G
ps
(dB)
16.5
16.9
16.7
η
D
(%)
46.2
47.7
47.4
Output PAR
(dB)
6.2
6.0
5.8
ACPR
(dBc)
--31.3
--32.6
--34.4
MRF8P9210NR3
2
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4. Each side of device measured separately.
5. Part internally matched both on input and output.
6. Measurement made with device in a Symmetrical Doherty configuration.
(continued)
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances
(In Freescale Doherty Characterization Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
= 750 mA, V
GSB
= 1.2 Vdc,
920--960 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW
P
out
@ 3 dB Compression Point
(1)
IMD Symmetry @ 80 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 40 MHz Bandwidth @ P
out
= 63 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
(2)
P1dB
P3dB
IMD
sym
—
—
—
193
290
10
—
—
—
W
W
MHz
VBW
res
G
F
∆G
∆P1dB
—
—
—
—
64
0.4
0.017
0.0018
—
—
—
—
MHz
dB
dB/°C
dB/°C
1. P3dB = P
avg
+ 7.0 dB where P
avg
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
2. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
MRF8P9210NR3
RF Device Data
Freescale Semiconductor, Inc.
3
V
GGA
C18*
V
DSA
C31
C30 C22
C26
C20
C12
C1
Z1
R3
C21
C27
C19*
V
GGB
C31 C23
C30
V
DSB
C3
C7
C13
R1
C2
C6
C14
CUT OUT AREA
R2
C
C16*
C8*
C11
C10
C5
C15*
C24
C4
P
C17*
C9*
C25
MRF8P9210N
Rev. 1
*C8, C9, C15, C16, C17, C18, and C19 are mounted vertically.
Figure 1. MRF8P9210NR3 Production Test Circuit Component Layout
Table 6. MRF8P9210NR3 Production Test Circuit Component Designations and Values
Part
C1, C2, C3, C4, C5
C6, C7
C8
C9
C10
C11
C12
C13
C14
C15
C16, C17
C18, C19
C20, C21
C22, C23, C24, C25, C26, C27
C28, C29, C30, C31
R1, R2
R3
Z1
PCB
Description
100 pF Chip Capacitors
30 pF Chip Capacitors
24 pF Chip Capacitor
30 pF Chip Capacitor
4.3 pF Chip Capacitor
3.9 pF Chip Capacitor
7.5 pF Chip Capacitor
8.2 pF Chip Capacitor
1.5 pF Chip Capacitor
2.0 pF Chip Capacitor
9.1 pF Chip Capacitors
47 pF Chip Capacitors
200 pF Chip Capacitors
10
μF,
50 V Chip Capacitors
2.2
μF,
100 V Chip Capacitors
2.37
Ω,
1/4 W Chip Resistors
50
Ω,
10 W Chip Resistor
815--960 MHz Band 90°, 3 dB Hybrid Coupler
0.030″,
ε
r
= 3.5
Part Number
ATC600F101JT250XT
ATC600F300JT250XT
ATC100B240JT500XT
ATC100B300JT500XT
ATC600F4R3BT250XT
ATC600F3R9BT250XT
ATC100B7R5CT500XT
ATC100B8R2CT500XT
ATC800B1R5BT500XT
ATC800B2R0BT500XT
ATC100B9R1CT500XT
ATC100B470JT500XT
ATC800B201JT300XT
GRM55DR61H106KA88L
GRM32ER72A225KA35L
CRCW12062R37FNEA
82--7034
GSC362--HYB0900
RF35A2
Manufacturer
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
Murata
Murata
Vishay
Florida RF Labs
Soshin
Taconic
MRF8P9210NR3
4
RF Device Data
Freescale Semiconductor, Inc.
C26
C20
C12
C1
Z1
R3
C21
C27
C19*
+
V
GGB
+
C23
V
DSB
C3
C7
C13
R1
C2
C6
C14
CUT OUT AREA
R2
C
C16*
C17*
C8*
C11
C10
C9*
C5
C15*
C24
C4
P
*C8, C9, C15, C16, C17, C18, and C19 are mounted vertically.
Figure 2. MRF8P9210NR3 Characterization Test Circuit Component Layout
Table 7. MRF8P9210NR3 Characterization Test Circuit Component Designations and Values
Part
C1, C2, C3, C4, C5
C6, C7
C8
C9
C10
C11
C12
C13
C14
C15
C16, C17
C18, C19
C20, C21
C22, C23
C24, C25, C26, C27
R1, R2
R3
Z1
PCB
Description
100 pF Chip Capacitors
30 pF Chip Capacitors
24 pF Chip Capacitors
30 pF Chip Capacitors
4.3 pF Chip Capacitors
3.9 pF Chip Capacitors
7.5 pF Chip Capacitors
8.2 pF Chip Capacitors
1.5 pF Chip Capacitors
2.0 pF Chip Capacitors
9.1 pF Chip Capacitors
47 pF Chip Capacitors
200 pF Chip Capacitors
220
μF
Electrolytic Capacitor
10
μF,
50 V Chip Capacitors
2.37
Ω,
1/4 W Chip Resistors
50
Ω,
10 W Chip Resistor
815--960 MHz Band 90°, 3 dB Hybrid Coupler
0.030″,
ε
r
= 3.5
Part Number
ATC600F101JT250XT
ATC600F300JT250XT
ATC100B240JT500XT
ATC100B300JT500XT
ATC600F4R3BT250XT
ATC600F3R9BT250XT
ATC100B7R5CT500XT
ATC100B8R2CT500XT
ATC800B1R5BT500XT
ATC800B2R0BT500XT
ATC100B9R1CT500XT
ATC100B470JT500XT
ATC800B201JT300XT
MCGPR100V227M16X26--RH
GRM55DR61H106KA88L
CRCW12062R37FNEA
82--7034
GSC362--HYB0900
RF35A2
Manufacturer
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
Multicomp
Murata
Vishay
Florida RF Labs
Soshin
Taconic
RF Device Data
Freescale Semiconductor, Inc.
+
V
GGA
C18*
+
V
DSA
C22
C25
MRF8P9210N
Rev. 1
MRF8P9210NR3
5
stm32/stm8
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