Freescale Semiconductor
Technical Data
Document Number: MRF8S9202N
Rev. 1, 2/2012
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 920 to 960
MHz. Can be used in Class AB and Class C for all typical cellular base station
modulation formats.
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
=
1300 mA, P
out
= 58 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth =
3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency
920 MHz
940 MHz
960 MHz
G
ps
(dB)
19.0
19.1
18.9
η
D
(%)
36.3
37.2
37.3
Output PAR
(dB)
6.3
6.2
6.1
ACPR
(dBc)
--38.2
--38.0
--37.1
MRF8S9202NR3
MRF8S9202GNR3
920-
-960 MHz, 58 W AVG., 28 V
SINGLE W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFETs
•
Capable of Handling 7:1 VSWR, @ 32 Vdc, 920 MHz, 290 Watts CW Output
Power (3 dB Input Overdrive from Rated P
out
). Designed for
Enhanced Ruggedness.
•
Typical P
out
@ 1 dB Compression Point
≃
200 Watts CW
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
•
Designed for Digital Predistortion Error Correction Systems
•
Optimized for Doherty Applications
•
225°C Capable Plastic Package
•
In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
CASE 2021-
-03, STYLE 1
OM-
-780-
-2
PLASTIC
MRF8S9202NR3
CASE 2267-
-01
OM-
-780- GULL
-2
PLASTIC
MRF8S9202GNR3
Value
--0.5, +70
--6.0, +10
32, +0
--65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 58 W CW, 28 Vdc, I
DQ
= 1300 mA, 920 MHz
Case Temperature 90°C, 200 W CW, 28 Vdc, I
DQ
= 1300 mA, 920 MHz
Symbol
R
θJC
Value
(2,3)
0.31
0.27
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2010, 2012. All rights reserved.
MRF8S9202NR3 MRF8S9202GNR3
1
RF Device Data
Freescale Semiconductor, Inc.
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2
A
IV
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 70 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 800
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1300 mAdc)
Fixture Gate Quiescent Voltage
(1)
(V
DD
= 28 Vdc, I
D
= 1300 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 3.3 Adc)
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.5
—
4.6
0.1
2.3
3.1
6.2
0.2
3.0
—
7.6
0.3
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(2,3)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1300 mA, P
out
= 58 W Avg., f = 920 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
PAR
ACPR
IRL
18.0
34.5
6.0
—
—
19.0
36.3
6.3
--38.2
--13
21.0
—
—
--35.0
--9
dB
%
dB
dBc
dB
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1300 mA, P
out
= 58 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Frequency
920 MHz
940 MHz
960 MHz
G
ps
(dB)
19.0
19.1
18.9
η
D
(%)
36.3
37.2
37.3
Output PAR
(dB)
6.3
6.2
6.1
ACPR
(dBc)
--38.2
--38.0
--37.1
IRL
(dB)
--13
--15
--15
1. V
GG
= 2 x V
GS(Q)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
3. Measurement made with device in straight lead configuration before any lead forming operation is applied.
(continued)
MRF8S9202NR3 MRF8S9202GNR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 180 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 40 MHz Bandwidth @ P
out
= 58 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
Symbol
P1dB
IMD
sym
Min
—
—
Typ
200
7.5
Max
—
—
Unit
W
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1300 mA, 920--960 MHz Bandwidth
VBW
res
G
F
∆G
∆P1dB
—
—
—
—
70
0.3
0.02
0.006
—
—
—
—
MHz
dB
dB/°C
dB/°C
MRF8S9202NR3 MRF8S9202GNR3
RF Device Data
Freescale Semiconductor, Inc.
3
C2
R1
R2
C3
C9
C17
R3
C10
C4
C5
C8
C13
C15
C16
C12
C14
C18
C6
C7
C11
C1
MRF8S9202N
Rev. 0
Figure 1. MRF8S9202NR3(GNR3) Test Circuit Component Layout
Table 6. MRF8S9202NR3(GNR3) Test Circuit Component Designations and Values
Part
C1, C2
C3, C4, C5, C6, C7
C8
C9, C10, C11, C12
C13, C14
C15
C16
C17, C18
R1, R2
R3
PCB
Description
220
μF,
63 V Electrolytic Capacitors
10
μF,
50 V Chip Capacitors
2.7 pF Chip Capacitor
47 pF Chip Capacitors
1.2 pF Chip Capacitors
2 pF Chip Capacitor
4.3 pF Chip Capacitor
3.3 pF Chip Capacitors
1 KΩ, 1/8 W Chip Resistors
10
Ω,
1/8 W Chip Resistor
0.020″,
ε
r
= 3.5
Part Number
222212018221
C5750X5R1H106MT
ATC100B2R7BT500XT
ATC100B470JT500XT
ATC100B1R2BT500XT
ATC100B2R0BT500XT
ATC100B4R3BT500XT
ATC100B3R3BT500XT
WCR08051KG
232273461009L
RO4350B
Manufacturer
Vishay BC
TDK
ATC
ATC
ATC
ATC
ATC
ATC
Welwyn
Phycomp
Rogers
MRF8S9202NR3 MRF8S9202GNR3
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
V
DD
= 28 Vdc, P
out
= 58 W (Avg.), I
DQ
= 1300 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
η
D
, DRAIN
EFFICIENCY (%)
21
20.5
20
G
ps
, POWER GAIN (dB)
19.5
19
18.5
18
17.5
17
16.5
16
820
Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF
840
860
880
900
920
940
G
ps
45
h
D
40
35
30
25
ACPR --36
--38
ACPR (dBc)
IRL
--40
--42
--46
980
IRL, INPUT RETURN LOSS (dB)
--4
--8
--12
--16
--20
--24
--0.6
--0.8
--1
--1.2
--1.4
--1.6
PARC (dB)
PARC --44
960
f, FREQUENCY (MHz)
Figure 2. Output Peak- -Average Ratio Compression (PARC)
-to-
Broadband Performance @ P
out
= 58 Watts Avg.
--10
--20
--30
IM5--U
--40
IM7--L
--50
--60
IM7--U
1
10
TWO--TONE SPACING (MHz)
100
IM5--L
IMD, INTERMODULATION DISTORTION (dBc)
V
DD
= 28 Vdc, P
out
= 180 W (PEP), I
DQ
= 1300 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
IM3--U
IM3--L
Figure 3. Intermodulation Distortion Products
versus Two-
-Tone Spacing
20
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
19.5
G
ps
, POWER GAIN (dB)
19
18.5
18
17.5
17
1
0
--1
--2
--3
--4
--5
--1 dB = 49 W
--3 dB = 95 W
--2 dB = 69 W
PARC
V
DD
= 28 Vdc, I
DQ
= 1300 mA, f = 940 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
30
50
70
90
110
G
ps
ACPR
h
D
70
η
D
,
DRAIN EFFICIENCY (%)
60
50
40
30
20
10
130
--20
--25
--30
--35
--40
--45
--50
ACPR (dBc)
P
out
, OUTPUT POWER (WATTS)
Figure 4. Output Peak- -Average Ratio
-to-
Compression (PARC) versus Output Power
MRF8S9202NR3 MRF8S9202GNR3
RF Device Data
Freescale Semiconductor, Inc.
5
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