Glass Passivated Bridge Rectifiers
Comchip
SMD Diode Specialist
GBJ25005-G Thru. GBJ2510-G
Reverse Voltage: 50 to 1000V
Forward Current: 25.0A
RoHS Device
Features
- Rating to 1000V PRV.
-Ideal for printed circuit board
-Low forward voltage drop, high current capability.
Φ0.134(3.4)
Φ0.122(3.1)
1.193(30.3)
1.169(29.7)
GBJ
0.118(3.00)*45°
0.189(4.8)
0.173(4.4)
0.150(3.8)
0.134(3.4)
Φ0.134(3.4)
Φ0.122(3.1)
0.114(2.9)
0.098(2.5)
0.198
MAX
(5.1)
0.800(20.30)
0.776(19.70)
Mechanical Data
-Epoxy: U/L 94-V0 rate flame retardant.
-Case: Molded plastic, GBJ
-Mounting position: Any
-Weight: 6.81grams
0.106(2.7)
0.096(2.3)
0.094(2.4)
0.078(2.0)
0.043(1.1)
0.035(0.9)
+
~ ~ _
0.165(4.2)
0.142(3.6)
0.708(18.0)
0.669(17.0)
0.441(11.2)
0.425(10.8)
0.402(10.2) 0.303(7.7) 0.303(7.7)
SPACING
0.386(9.8) 0.287(7.3) 0.287(7.3)
0.031(0.8)
0.023(0.6)
Dimensions in inches and (millimeter)
Maximum ratings and electrical characteristics
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
O
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward (With heatsink Note2)
Rectified Current @Tc=100°C (without hestsink)
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
GBJ
25005-G
50
35
50
GBJ
2501-G
100
70
100
GBJ
2502-G
200
140
200
GBJ
2504-G
400
280
400
25.0
4.2
350
1.1
10.0
500
510
85
0.6
-55 to +150
-55 to +150
GBJ
2506-G
600
420
600
GBJ
2508-G
800
560
800
GBJ
2510-G
1000
700
1000
Unit
V
V
V
A
A
Peak Forward Surage Current ,
8.3ms Single Half Sine-Wave
Super Imposed On Rated Load
(JEDEC Method)
Maximum Forward Voltage at 12.5A DC
Maximum DC Reverse Current
At Rate DC Blocking Voltage
I T Rating for Fusing(t<8.3ms)
Typical Junction Capacitandce Per Element
(Note 1)
T
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
2
V
F
I
R
It
C
J
R
θJA
T
J
T
STG
2
V
μA
As
pF
O
@T
J
=25°C
@T
J
=125°C
2
C/W
O
C
C
O
Notes:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Device mounted on 300mm*300mm*1.6mm Cu plate heatsink.
REV:C
QW-BBR60
Page 1
Comchip Technology CO., LTD.
Glass Passivated Bridge Rectifiers
Rating and Characteristics Curves (GBJ25005-G Thru. GBJ2510-G)
Fig. 1- Forward Current Derating
Curve
25
O
WITH HEAKSINK
C
Comchip
SMD Diode Specialist
Fig. 2- Typical Forward Characteristics
100
20
Instantaneous Forward Current, (A)
Average Forward Current, (A)
10.0
15
O
SINGLE PHASE HALF WAVE 60HZ
C
RESISTIVE OR INDUCTIVE LOAD
1.0
T
J
= 25°C
PULSE WIDTH
300us
10
0.1
5
O
WITHOUT HEA SINK
C
0.0
0.01
0
20
40
60
80
100
120
140
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Case Temperature, (°C )
Instantaneous Forward Voltage, (V)
Fig. 3- Maximum Non-Repetitive
Surge Current
400
1000
Fig. 4- Typical Junction Capacitance
Peak Forward Surge Current, (A)
350
300
Capacitance, (pF)
250
200
150
100
50
0
1
10
100
TJ=150°C
SINGLE-SINE-WAVE
(JEDEC METHOD)
100
10
O
T
J
=25°C,f=1MHz
C
1
1
1.0
10.0
100
Number of cycles at 60Hz
Reverse Voltage , (V)
Fig.5- Typical Reverse Characteristics
Instantaneous Reverse Current, (
μ
A)
1000
100
O
T
J
=125°C
C
T
J
=100°C
10
1.0
O
T
J
=50°C
C
O
T
J
=25°C
C
0.1
20
40
60
80
100
Percent of Rated Peak Reverse Voltage , (%)
REV: C
QW-BBR60
Page 2
Comchip Technology CO., LTD.
NXP MCU
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