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MRF8S19260HSR6: 产品描述transistors RF mosfet 65v N-CH 1960mhz; 产品类别半导体分立半导体; 文件大小500KB，共14页; 制造商FREESCALE (NXP); 标准

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transistors RF mosfet 65v N-CH 1960mhz

参数名称	属性值
Manufacture	Freescale Semiconduc
产品种类 Product Category	Transistors RF MOSFET
RoHS	Yes
Configurati	Single
Transistor Polarity	N-Channel
频率 Frequency	1.93 GHz to 1.99 GHz
Gai	18.2 dB at 1.99 GHz
Output Powe	74 W
Vds - Drain-Source Breakdown Voltage	65 V
Vgs - Gate-Source Breakdown Voltage	10 V
最大工作温度 Maximum Operating Temperature	+ 150 C
安装风格 Mounting Style	SMD/SMT
封装 / 箱体 Package / Case	NI-1230S-8
系列 Packaging	Reel
最小工作温度 Minimum Operating Temperature	- 30 C
工厂包装数量 Factory Pack Quantity	150
Vgs th - Gate-Source Threshold Voltage	1.8 V
Unit Weigh	13.193 g

	MRF8S19260HSR6	MRF8S19260HR6
描述	transistors RF mosfet 65v N-CH 1960mhz	transistors RF mosfet 65v N-CH 1960mhz
Manufacture	Freescale Semiconduc	Freescale Semiconduc
产品种类 Product Category	Transistors RF MOSFET	Transistors RF MOSFET
RoHS	Yes	Yes
Configurati	Single	Single
Transistor Polarity	N-Channel	N-Channel
频率 Frequency	1.93 GHz to 1.99 GHz	1.93 GHz to 1.99 GHz
Gai	18.2 dB at 1.99 GHz	18.2 dB at 1.99 GHz
Output Powe	74 W	74 W
Vds - Drain-Source Breakdown Voltage	65 V	65 V
Vgs - Gate-Source Breakdown Voltage	10 V	10 V
最大工作温度 Maximum Operating Temperature	+ 150 C	+ 150 C
安装风格 Mounting Style	SMD/SMT	SMD/SMT
封装 / 箱体 Package / Case	NI-1230S-8	NI-1230-8
系列 Packaging	Reel	Reel
最小工作温度 Minimum Operating Temperature	- 30 C	- 30 C
工厂包装数量 Factory Pack Quantity	150	150
Vgs th - Gate-Source Threshold Voltage	1.8 V	1.8 V
Unit Weigh	13.193 g	13.193 g

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