Freescale Semiconductor
Technical Data
Document Number: MRFE6S9205H
Rev. 0, 10/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
•
Typical Single - Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
=
1400 mA, P
out
= 58 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 21.2 dB
Drain Efficiency — 34%
Device Output Signal PAR — 6.3 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 39.1 dBc in 3.84 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz,
P
out
= 260 W CW
(
3 dB Input Overdrive from Rated
P
out
), Designed for Enhanced Ruggedness
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Optimized for Doherty Applications
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRFE6S9205HR3
MRFE6S9205HSR3
880 MHz, 58 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRFE6S9205HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRFE6S9205HSR3
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
- 0.5, +66
- 0.5, +12
- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 202 W CW
Case Temperature 77°C, 58 W CW
Symbol
R
θJC
Value
(2,3)
0.27
0.33
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access the MTTF calculators
by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2007. All rights reserved.
MRFE6S9205HR3 MRFE6S9205HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
Class 1C (Minimum)
Class B (Minimum)
Class IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 66 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 600
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 1400 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 4.2 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 28 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
1.63
590
491
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1.4
2.2
0.1
2.1
2.9
0.2
2.9
3.7
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
10
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1400 mA, P
out
= 58 W Avg. W - CDMA, f = 880 MHz,
Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched on input.
(continued)
G
ps
η
D
PAR
ACPR
IRL
20
32
6
—
—
21.2
34
6.3
- 39.1
- 12.5
23
—
—
- 37.5
- 8.5
dB
%
dB
dBc
dB
MRFE6S9205HR3 MRFE6S9205HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Video Bandwidth @ 220 W PEP P
out
where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW)
ΔIMD3
= IMD3 @ VBW
frequency - IMD3 @ 100 kHz <1 dBc (both sidebands)
Gain Flatness in 35 MHz Bandwidth @ P
out
= 58 W Avg.
Average Deviation from Linear Phase in 35 MHz Bandwidth
@ P
out
= 200 W CW
Average Group Delay @ P
out
= 200 W CW, f = 880 MHz
Part - to - Part Insertion Phase Variation @ P
out
= 200 W CW,
f = 880 MHz, Six Sigma Window
Gain Variation over Temperature
( - 30°C to +85°C)
Output Power Variation over Temperature
( - 30°C to +85°C)
Symbol
VBW
—
G
F
Φ
Delay
ΔΦ
ΔG
ΔP1dB
—
—
—
—
—
—
10
0.315
0.59
4.27
26.3
0.016
0.006
—
—
—
—
—
—
—
dB
°
ns
°
dB/°C
dBm/°C
Min
Typ
Max
Unit
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1400 mA, 865 - 900 MHz Bandwidth
MRFE6S9205HR3 MRFE6S9205HSR3
RF Device Data
Freescale Semiconductor
3
V
SUPPLY
B1
V
BIAS
+
R2
C5
C6
C7
R1
RF
INPUT Z1
C1
C2
C3
C4
V
SUPPLY
+
C15
C16
C17
C18
C19
C20
Z10
Z8
Z11
Z12
Z13
Z14 Z15
Z16
C27
Z9
DUT
C8 C9
C10 C11
C12 C13
C14
RF
OUTPUT
Z17
R3
C21
C22
C23
C24
C25
+
C26
Z2
Z3
Z4
Z5
Z6
Z7
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8, Z9
Z10
0.263″ x 0.065″ Microstrip
0.310″ x 0.065″ Microstrip
0.711″ x 0.120″ Microstrip
0.199″ x 0.120″ Microstrip
0.263″ x 1.020″ x 0.120″ Taper
0.351″ x 1.020″ Microstrip
0.055″ x 1.020″ Microstrip
0.947″ x 0.120″ Microstrip
0.060″ x 0.980″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
PCB
0.150″ x 0.980″ Microstrip
0.200″ x 0.980″ x 0.387″ Taper
0.115″ x 0.444″ Microstrip
0.140″ x 0.444″ x 0.110″ Taper
0.770″ x 0.110″ Microstrip
0.442″ x 0.065″ Microstrip
0.274″ x 0.065″ Microstrip
Taconic RF35 0.030″,
ε
r
= 3.5
Figure 1. MRFE6S9205HR3(HSR3) Test Circuit Schematic
Table 5. MRFE6S9205HR3(HSR3) Test Circuit Component Designations and Values
Part
B1
C1, C7, C15, C16, C21,
C22, C27
C2, C14
C3, C4
C5
C6, C17, C18, C19, C23,
C24, C25
C8, C9, C10, C11, C12, C13
C20, C26
R1, R3
R2
Short RF Bead
39 pF Chip Capacitors
0.8 - 8.0 pF Variable Capacitors, Gigatrim
5.1 pF Chip Capacitors
33
μF,
25 V Electrolytic Capacitor
10
μF,
50 V Chip Capacitors
6.8 pF Chip Capacitors
470
μF,
63 V Electrolytic Capacitors
3.3
Ω,
1/3 W Chip Resistors
2.2 kΩ, 1/4 W Chip Resistor
Description
Part Number
2743019447
ATC100B390JT500XT
27291SL
ATC100B5R1JT500XT
EMVY350ADA330MF55G
GRM55DR61H106KA88B
ATC100B6R8JT500XT
EKME630ELL471MK255
CRCW12103R30FKEA
CRCW12062K20FKEA
Manufacturer
Fair - Rite
ATC
Johanson
ATC
Nippon Chemi - Con
Murata
ATC
United Chemi - Con
Vishay
Vishay
MRFE6S9205HR3 MRFE6S9205HSR3
4
RF Device Data
Freescale Semiconductor
R3
B1
+
R2
C6
C7
C26
C21
C22
C23 C24
C5
C4
C1
R1
CUT OUT AREA
C9
C12
C10
C8
C13
C25
C14
C27
C2
C3
C11
C19
C15 C16
C17 C18
MRFE6S9205H
Rev. 1
C20
Figure 2. MRFE6S9205HR3(HSR3) Test Circuit Component Layout
MRFE6S9205HR3 MRFE6S9205HSR3
RF Device Data
Freescale Semiconductor
5
能源基础设施
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