Freescale Semiconductor
Technical Data
Document Number: MRF8S23120H
Rev. 0, 11/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for LTE base station applications with frequencies from 2300 to
2400 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
=
800 mA, P
out
= 28 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
2300 MHz
2350 MHz
2400 MHz
G
ps
(dB)
16.0
16.3
16.6
η
D
(%)
31.9
30.9
31.2
Output PAR
(dB)
6.1
6.4
6.3
ACPR
(dBc)
--37.1
--37.9
--37.5
MRF8S23120HR3
MRF8S23120HSR3
2300-
-2400 MHz, 28 W AVG., 28 V
LTE
LATERAL N-
-CHANNEL
RF POWER MOSFETs
•
Capable of Handling 5:1 VSWR, @ 30 Vdc, 2350 MHz, 138 Watts CW
(1)
Output Power (2 dB Input Overdrive from Rated P
out
)
•
Typical P
out
@ 1 dB Compression Point
≃
107 Watts CW
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
Designed for Digital Predistortion Error Correction Systems
•
Optimized for Doherty Applications
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(2,3)
CW Operation @ T
C
= 25°C
Derate above 25°C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
CW
CASE 465-
-06, STYLE 1
NI-
-780
MRF8S23120HR3
CASE 465A-
-06, STYLE 1
NI-
-780S
MRF8S23120HSR3
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
225
109
0.52
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 76°C, 28 W CW, 28 Vdc, I
DQ
= 800 mA, 2400 MHz
Case Temperature 80°C, 120 W CW
(1)
, 28 Vdc, I
DQ
= 800 mA, 2400 MHz
Symbol
R
θJC
Value
(3,4)
0.50
0.47
Unit
°C/W
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.Go
to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2010. All rights reserved.
MRF8S23120HR3 MRF8S23120HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
Symbol
I
DSS
I
DSS
I
GSS
Min
—
—
—
Typ
—
—
—
Max
10
1
1
Unit
μAdc
μAdc
μAdc
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 172
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 800 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 1.72 Adc)
V
GS(th)
V
GS(Q)
V
DS(on)
1.0
1.8
0.1
1.8
2.6
0.15
2.5
3.3
0.3
Vdc
Vdc
Vdc
Functional Tests
(1)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 800 mA, P
out
= 28 W Avg., f = 2300 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
PAR
ACPR
IRL
14.5
29.0
5.7
—
—
16.0
31.9
6.1
--37.1
--12
17.5
—
—
--35.0
--7
dB
%
dB
dBc
dB
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 800 mA, P
out
= 28 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Frequency
2300 MHz
2350 MHz
2400 MHz
1. Part internally matched both on input and output.
(continued)
G
ps
(dB)
16.0
16.3
16.6
η
D
(%)
31.9
30.9
31.2
Output PAR
(dB)
6.1
6.4
6.3
ACPR
(dBc)
--37.1
--37.9
--37.5
IRL
(dB)
--12
--19
--18
MRF8S23120HR3 MRF8S23120HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
—
—
Typ
107
13
Max
—
—
Unit
W
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 800 mA, 2300--2400 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 84 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 100 MHz Bandwidth @ P
out
= 28 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
(1)
P1dB
IMD
sym
VBW
res
G
F
∆G
∆P1dB
—
—
—
—
62
0.6
0.002
0.008
—
—
—
—
MHz
dB
dB/°C
dB/°C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
MRF8S23120HR3 MRF8S23120HSR3
RF Device Data
Freescale Semiconductor
3
B1
C16
C8
C14
C6*
R1
C4
CUT OUT AREA
C13
C2
C5
C1
C15
C3
C7*
C10 C12
MRF8S23120H/S
Rev. 0
*C6 and C7 are mounted vertically.
Figure 1. MRF8S23120HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8S23120HR3(HSR3) Test Circuit Component Designations and Values
Part
B1
C1, C4
C2, C15
C3
C5, C6, C7
C8
C9, C10, C11, C12, C14
C13
C16
R1
PCB
Ferrite Bead
5.6 pF Chip Capacitors
0.5 pF Chip Capacitors
1.8 pF Chip Capacitor
8.2 pF Chip Capacitors
3.3
μF,
100 V Chip Capacitor
10
μF,
50 V Chip Capacitors
470
μF,
63 V Electrolytic Capacitor
330 nF, 100 V Chip Capacitor
4.75
Ω,
1/4 W Chip Resistor
0.030″,
ε
r
= 2.55
Description
Part Number
MPZ2012S300A
ATC100B5R6CT500XT
ATC100B0R5BT500XT
ATC100B1R5BT500XT
ATC100B8R2CT500XT
C5750X7R2A335MT
C5750X7R1H106KT
MCGPR63V477M13X26--RH
C3225JB2A334KT
CRCW12064R75FNEA
AD255A
Manufacturer
TDK
ATC
ATC
ATC
ATC
TDK
TDK
Multicomp
TDK
Vishay
Arlon
MRF8S23120HR3 MRF8S23120HSR3
4
RF Device Data
Freescale Semiconductor
+
C9
C11
TYPICAL CHARACTERISTICS
V
DD
= 28 Vdc, P
out
= 28 W (Avg.), I
DQ
= 800 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
η
D
, DRAIN
EFFICIENCY (%)
17.2
17
16.8
G
ps
, POWER GAIN (dB)
16.6
16.4
16.2
16
15.8
15.6
15.4
15.2
2290
ACPR
2305
2320
2335
2350
2365
2380
2395
IRL
G
ps
PARC
η
D
34
33
32
31
30
--34
--35
ACPR (dBc)
--36
--37
--38
--39
2410
IRL, INPUT RETURN LOSS (dB)
--10
--15
--20
--25
--30
--35
--1
--1.2
--1.4
--1.6
--1.8
--2
PARC (dB)
f, FREQUENCY (MHz)
Figure 2. Output Peak- -Average Ratio Compression (PARC)
-to-
Broadband Performance @ P
out
= 28 Watts Avg.
--10
--20
--30
--40
--50
--60
IMD, INTERMODULATION DISTORTION (dBc)
V
DD
= 28 Vdc, P
out
= 84 W (PEP), I
DQ
= 800 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2350 MHz
IM3--U
IM3--L
IM5--U
IM5--L
IM7--L
IM7--U
1
10
TWO--TONE SPACING (MHz)
100
Figure 3. Intermodulation Distortion Products
versus Two-
-Tone Spacing
17
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
16.6
G
ps
, POWER GAIN (dB)
16.2
15.8
15.4
15
14.6
1
0
--1
--2
--3
--4
--5
ACPR
--1 dB = 26.5 W
--2 dB = 36.5 W
PARC
G
ps
20
10
0
65
60
η
D
,
DRAIN EFFICIENCY (%)
50
η
D
40
30
--20
--25
--30
--35
--40
--45
--50
ACPR (dBc)
V
DD
= 28 Vdc, I
DQ
= 800 mA, f = 2350 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
--3 dB = 48.5 W
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
15
25
35
45
55
P
out
, OUTPUT POWER (WATTS)
Figure 4. Output Peak- -Average Ratio
-to-
Compression (PARC) versus Output Power
MRF8S23120HR3 MRF8S23120HSR3
RF Device Data
Freescale Semiconductor
5
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