Freescale Semiconductor
Technical Data
Document Number: MRF8HP21130H
Rev. 0, 4/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
•
Typical Doherty Single--Carrier W--CDMA Performance: V
DD
= 28 Volts,
I
DQB
= 360 mA, V
GSA
= 0.4 Vdc, P
out
= 28 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF.
Frequency
2110 MHz
2140 MHz
2170 MHz
G
ps
(dB)
14.2
14.1
14.0
η
D
(%)
46.4
45.7
45.1
Output PAR
(dB)
7.9
7.7
7.6
ACPR
(dBc)
--35.4
--35.3
--34.8
MRF8HP21130HR3
MRF8HP21130HSR3
2110-
-2170 MHz, 28 W AVG., 28 V
W-
-CDMA, LTE
LATERAL N-
-CHANNEL
RF POWER MOSFETs
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 157 Watts CW
(1)
Output Power (3 dB Input Overdrive from Rated P
out
)
•
Typical P
out
@ 3 dB Compression Point
≃
166 Watts CW
(1)
Features
•
Advanced High Performance In--Package Doherty
•
Production Tested in a Doherty Configuration
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
Designed for Digital Predistortion Error Correction Systems
•
RoHS Compliant
•
NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 8.
•
NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 8.
CASE 465M-
-01, STYLE 1
NI-
-780-
-4
MRF8HP21130HR3
CASE 465H-
-02, STYLE 1
NI-
-780S-
-4
MRF8HP21130HSR3
Peaking
RF
inA
/V
GSA
3
1 RF
outA
/V
DSA
RF
inB
/V
GSB
4
Carrier
(Top View)
2 RF
outB
/V
DSB
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(2,3)
CW Operation @ T
C
= 25°C
Derate above 25°C
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
CW
Figure 1. Pin Connections
Symbol
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
225
118
0.28
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
©
Freescale Semiconductor, Inc., 2011. All rights reserved.
MRF8HP21130HR3 MRF8HP21130HSR3
1
RF Device Data
Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81°C, 28 W CW, 28 Vdc, I
DQB
= 360 mA, V
GSA
= 0.4 Vdc, 2170 MHz
Case Temperature 105°C, 110 W CW
(3)
, 28 Vdc, I
DQB
= 360 mA, V
GSA
= 0.4 Vdc, 2170 MHz
Symbol
R
θJC
Value
(1,2)
0.60
0.50
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1C (Minimum)
B (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(4)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics - Side A
(4)
-
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 102
μAdc)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 1.02 Adc)
On Characteristics - Side B
(4)
-
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 75
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DB
= 360 mA, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 0.75 Adc)
V
GS(th)
V
GS(Q)
V
DS(on)
1.2
1.9
0.1
1.8
2.6
0.2
2.7
3.4
0.3
Vdc
Vdc
Vdc
V
GS(th)
V
DS(on)
0.1
0.1
0.9
0.2
1.6
0.3
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(5,6)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQB
= 360 mA, V
GSA
= 0.4 Vdc,
P
out
= 28 W Avg., f = 2170 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
G
ps
η
D
PAR
ACPR
13.0
42.0
6.7
—
14.0
45.1
7.6
--34.8
16.0
—
—
--30.0
dB
%
dB
dBc
Typical Broadband Performance
(6)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQB
= 360 mA,
V
GSA
= 0.4 Vdc, P
out
= 28 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Frequency
2110 MHz
2140 MHz
2170 MHz
G
ps
(dB)
14.2
14.1
14.0
η
D
(%)
46.4
45.7
45.1
Output PAR
(dB)
7.9
7.7
7.6
ACPR
(dBc)
--35.4
--35.3
--34.8
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4. Each side of device measured separately.
5. Part internally matched both on input and output.
6. Measurement made with device in a Doherty configuration.
(continued)
MRF8HP21130HR3 MRF8HP21130HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances
(1)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQB
= 360 mA, V
GSA
= 0.4 Vdc,
2110--2170 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW
P
out
@ 3 dB Compression Point, CW
IMD Symmetry @ 52 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 60 MHz Bandwidth @ P
out
= 28 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
(2)
P1dB
P3dB
IMD
sym
—
—
—
130
(2)
166
(2)
18
—
—
—
W
W
MHz
VBW
res
G
F
∆G
∆P1dB
—
—
—
—
50
0.2
0.011
0.012
—
—
—
—
MHz
dB
dB/°C
dB/°C
1. Measurement made with device in a Doherty configuration.
2. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
MRF8HP21130HR3 MRF8HP21130HSR3
RF Device Data
Freescale Semiconductor
3
C1
C2
C3
C11 C12
C21
R1
C13
MRF8HP21130
Rev. 1
C4
Z1
R2
R3
C5
C6
R4
CUT OUT AREA
P
C14
C15
C
C16
C17
C7
C8
C18
C22
C19 C20
C9 C10
Figure 2. MRF8HP21130HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8HP21130HR3(HSR3) Test Circuit Component Designations and Values
Part
C1, C2, C9, C10, C11, C12,
C19, C20
C3, C4, C5, C8, C13, C15,
C16, C18
C6
C7
C14
C17
C21, C22
R2, R3
R1, R4
Z1
PCB
Description
10
μF
Chip Capacitors
15 pF Chip Capacitors
1.2 pF Chip Capacitor
0.5 pF Chip Capacitor
0.7 pF Chip Capacitor
1 pF Chip Capacitor
220
μF,
50 V Electrolytic Capacitors
100
Ω,
1/4 W Chip Resistors
10
Ω,
1/4 W Chip Resistors
2000--2300 MHz Band 90°, 3 dB Hybrid Coupler
0.020″,
ε
r
= 3.5
Part Number
GRM55DR61H106KA88L
ATC600F150JT250XT
ATC600F1R2BT250XT
ATC600F0R5BT250XT
ATC600F0R7BT250XT
ATC600F1R0BT250XT
EMVY500ADA221MJA0G
CRCW1206100RFKEA
CRCW120610R0JNEA
X3C21P1--03S
R04350
Manufacturer
Murata
ATC
ATC
ATC
ATC
ATC
United Chemi--Con
Vishay
Vishay
Anaren
Rogers
MRF8HP21130HR3 MRF8HP21130HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
V
DD
= 28 Vdc, P
out
= 28 W (Avg.), I
DQB
= 360 mA, V
GSA
= 0.4 Vdc
14.6 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
14.4
G
ps
, POWER GAIN (dB)
14.2
14
13.8
13.6
13.4
13.2
13
12.8
2060
2080
2100
2120
2140
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
PARC
G
ps
η
D
η
D
, DRAIN
EFFICIENCY (%)
--2
ACPR (dBc)
--2.2
--2.4
--2.6
--2.8
--3
PARC (dB)
ACPR (dBc)
--15
--20
--25
--30
--35
--40
--45
η
D
,
DRAIN EFFICIENCY (%)
14.8
48
47
46
45
44
--32
--33
--34
--35
ACPR
2160
2180
2200
--36
--37
2220
f, FREQUENCY (MHz)
Figure 3. Output Peak- -Average Ratio Compression (PARC)
-to-
Broadband Performance @ P
out
= 28 Watts Avg.
IMD, INTERMODULATION DISTORTION (dBc)
--10
--20
--30
--40
--50
--60
IM5--L
IM5--U
IM7--L
IM7--U
1
10
TWO--TONE SPACING (MHz)
100
V
DD
= 28 Vdc, P
out
= 52 W (PEP), I
DQB
= 360 mA
V
GSA
= 0.4 Vdc, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
IM3--L IM3--U
Figure 4. Intermodulation Distortion Products
versus Two-
-Tone Spacing
15
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
14.5
G
ps
, POWER GAIN (dB)
14
13.5
13
12.5
12
1
0
--1
G
ps
--2
--3
--4
--5
--1 dB = 17 W
--2 dB = 26 W
--3 dB = 34 W
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
10
20
30
40
50
PARC
60
ACPR
V
DD
= 28 Vdc, I
DQB
= 360 mA, V
GSA
= 0.4 Vdc
f = 2140 MHz, Single--Carrier W--CDMA
η
D
60
50
40
30
20
10
0
P
out
, OUTPUT POWER (WATTS)
Figure 5. Output Peak- -Average Ratio
-to-
Compression (PARC) versus Output Power
MRF8HP21130HR3 MRF8HP21130HSR3
RF Device Data
Freescale Semiconductor
5
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