®
BYW100-200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max)
V
F
(max)
1.5 A
200 V
150 °C
0.85 V
FEATURES AND BENEFITS
VERY LOW CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD AND REVERSE RECOVERY
TIMES
THE SPECIFICATIONS AND CURVES
ENABLE THE DETERMINATION OF trr AND
I
RM
AT 100°C UNDER USERS CONDITIONS
F126
(JEDEC DO-204AC)
DESCRIPTION
Low voltage drop and rectifier suited for switching
mode base drive and transistor circuits.
ABSOLUTE RATINGS
(limiting values)
Symbol
V
RRM
I
FRM
I
F(AV)
I
FSM
T
stg
Tj
T
L
Parameter
Repetitive peak reverse voltage
Repetitive peak forward current *
Average forward current *
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
Maximum lead temperature for soldering during 10s at 4mm from
case
tp = 5
µs
F = 1KHz
Ta = 95°C
δ
= 0.5
tp=10 ms sinusoidal
Value
200
80
1.5
50
-65 +150
+ 150
230
Unit
V
A
A
A
°C
°C
°C
* On infinite heatsink with 10mm lead length.
October 1999 - Ed: 3A
1/5
BYW100-200
THERMAL RESISTANCES
Symbol
R
th (j-a)
Junction to ambient *
Parameter
Value
45
Unit
°C/W
* On infinite heatsink with 10mm lead length.
STATIC ELECTRICAL CHARACTERISTICS
(per diode)
Symbol
I
R
*
Parameter
Reverse leakage
current
Forward voltage drop
Tests conditions
V
R
= V
RRM
Tj = 25°C
Tj = 100°C
I
F
= 4.5 A
I
F
= 1.5 A
Pulse test : * tp = 5 ms,
δ
< 2 %
** tp = 380
µs, δ
< 2 %
Min.
Typ.
Max.
10
0.5
1.2
Unit
µA
mA
V
V
F
**
Tj = 25°C
Tj = 100°C
0.78
0.85
To evaluate the maximum conduction losses use the following equation :
P = 0.75 x I
F(AV)
+ 0.075 I
F2(RMS)
RECOVERY CHARACTERISTICS
Symbol
trr
tfr
V
FP
Qrr
I
F
= 1 A
Tests conditions
dI
F
/dt = - 50 A/µs
V
R
= 30 V
Tj = 25°C
Tj = 25°C
Tj = 25°C
Tj = 25°C
30
5
10
Min.
Typ.
Max.
35
Unit
ns
ns
V
nC
I
F
= 1.5 A
dI
F
/dt = -50 A/µs
Measured at 1.1 x V
F
max.
I
F
= 1.5 A
I
F
= 1.5 A
dI
F
/dt = -50 A/µs
dI
F
/dt = -20 A/µs V
R
≤
30 V
Fig. 1:
Average forward power dissipation versus
average forward current.
PF(av)(W)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0
0.2
0.4
0.6
IF(av) (A)
0.8
1.0
1.2
δ
=tp/T
T
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ=1
Fig. 2:
Average forward current versus ambient
temperature (δ=0.5).
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
IF(av)(A)
Rth(j-a)=Rth(j-l)
Rth(j-a)=100°C/W
tp
Tamb(°C)
0
25
50
75
100
125
150
1.4
1.6
1.8
2/5
BYW100-200
Fig. 3:
Thermal resistance versus lead length.
Fig. 4:
Variation of thermal impedance junction to
ambient versus pulse duration (recommended pad
layout, epoxy FR4, e(Cu)=35µm).
Zth(j-a)/Rth(j-a)
Rth(j-a)
Rth(°C/W)
110
100
90
80
70
60
50
40
30
20
10
0
1.00
δ
= 0.5
δ
= 0.2
Rth(j-l)
0.10
δ
= 0.1
Single pulse
Lleads(mm)
5
10
15
20
25
tp(s)
1E-1
1E+0
1E+1
1E+2
5E+2
0.01
1E-2
Fig. 5:
Forward voltage drop versus forward
current (maximum values).
50.00
10.00
Tj=25°C
Fig. 6:
Junction capacitance versus reverse
voltage applied (typical values).
20
C(pF)
F=1MHz
Tj=25°C
IFM(A)
Tj=100°C
(Typical values)
10
5
Tj=100°C
1.00
2
VFM(V)
0.10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
VR(V)
1
1
10
100
200
Fig. 7:
Reverse recovery time versus dI
F
/dt .
trr(ns)
Tj=100°C
IF=1.5A
VR=30V
90% confidence
Fig. 8:
Peak reverse recovery current versus
dI
F
/dt.
2.5
2.0
1.5
IRM(A)
IF=1.5A
VR=30V
90% confidence
150
100
Tj=25°C
Tj=100°C
1.0
50
0.5
0
dIF/dt(A/µs)
1
10
100
Tj=25°C
0.0
dIF/dt(A/µs)
1
10
100
3/5
BYW100-200
Fig. 9:
Dynamic parameters versus junction
temperature.
250
%
Qrr
200
IRM
150
trr
100
25
50
75
Tj(°C)
100
125
4/5
BYW100-200
PACKAGE MECHANICAL DATA
F126
C
A
C
D
DIMENSIONS
REF.
A
B
C
D
Millimeters
Min.
6.05
2.95
26
0.76
0.81
Inches
Typ. Max. Min. Typ. Max.
6.20 6.35 0.238 0.244 0.250
3.00
3.05 0.116 0.118 0.120
31
1.024
1.220
0.86 0.030 0.032 0.034
D
B
Ordering code
BYW100-200
BYW100-200RL
Marking
BYW100-200
BYW100-200
Package
F126
F126
Weight
0.393g
0.393g
Base qty
1000
6000
Delivery mode
Ammopack
Tape and reel
Cooling method: by conduction (method A)
Epoxy meets UL 94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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