DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BYV99
Ultra fast low-loss
controlled avalanche rectifier
Product specification
Supersedes data of May 1993
1996 Feb 19
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
FEATURES
•
Glass passivated
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy
absorption capability
•
Available in ammo-pack.
DESCRIPTION
Rugged glass SOD57 package, using
a high temperature alloyed
construction.
BYV99
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
2/3 page
k
(Datasheet)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
V
R
I
F(AV)
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
average forward current
a
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
CONDITIONS
−
−
T
tp
= 50
°C;
lead length = 10 mm
see Fig. 2;
averaged over any 20 ms period;
see also Fig. 6
T
amb
= 60
°C;
PCB mounting (see
Fig.10); see Fig. 3;
averaged over any 20 ms period;
see also Fig. 6
−
MIN.
MAX.
600
600
1.00
V
V
A
UNIT
−
0.55
A
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward current
T
tp
= 50
°C;
see Fig. 4
T
amb
= 60
°C;
see Fig. 5
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
−
−
−
9
5
20
A
A
A
E
RSM
T
stg
T
j
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
−
−65
−65
10
+175
+150
mJ
°C
°C
1996 Feb 19
2
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
V
(BR)R
I
R
PARAMETER
forward voltage
reverse avalanche
breakdown voltage
reverse current
CONDITIONS
I
F
= 1 A; T
j
= T
j max
; see Fig. 7
I
F
= 1 A; see Fig. 7
I
R
= 0.1 mA
V
R
= V
RRMmax
;
see Fig. 8
V
R
= V
RRMmax
; T
j
= 150
°C;
see Fig. 8
t
rr
reverse recovery time
when switched from I
F
= 0.5 A
to I
R
= 1 A; measured at
I
R
= 0.25 A; see Fig. 12
f = 1 MHz; V
R
= 0 V; see Fig. 9
when switched from I
F
= 1 A to
V
R
≥
30 V and dI
F
/dt =
−1
A/µs;
see Fig.11
MIN.
−
−
700
−
−
−
TYP.
−
−
−
−
−
−
BYV99
MAX.
1.5
2.7
−
5
75
15
V
V
V
UNIT
µA
µA
ns
C
d
dI
R
--------
dt
diode capacitance
maximum slope of reverse
recovery current
−
−
75
−
−
3
pF
A/µs
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.10.
For more information please refer to the
“General Part of associated Handbook”.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
lead length = 10 mm
VALUE
46
100
UNIT
K/W
K/W
1996 Feb 19
3
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
GRAPHICAL DATA
MRC270
BYV99
MRC269
handbook, halfpage
1.2
handbook, halfpage
0.8
IF(AV)
(A)
0.8
IF(AV)
(A)
0.6
0.4
0.4
0.2
0
0
100
Ttp ( C)
o
0
200
0
100
Tamb (
o
C)
200
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.10.
Switched mode application.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MRC272
handbook, full pagewidth
10
I FRM
(A)
8
δ
=
0.05
6
0.1
4
0.2
0.5
2
1.0
0
–2
10
10
–1
1
10
10
2
10
3
tp (ms)
10
4
T
tp
= 50°C; R
th j-tp
= 46 K/W.
V
RRMmax
during 1
− δ;
curves include derating for T
j max
at V
RRM
= 600 V.
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Feb 19
4
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
BYV99
MRC271
handbook, full pagewidth
5.0
I FRM
(A)
4.0
δ
=
0.05
3.0
0.1
2.0
0.2
0.5
1.0
1.0
0
–2
10
10
–1
1
10
10
2
10
3
tp (ms)
10
4
T
amb
= 60
°C;
R
th j-a
= 100 K/W.
V
RRMmax
during 1
− δ;
curves include derating for T
j max
at V
RRM
= 600 V.
Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MGC593
MRA948
handbook, halfpage
3
handbook, halfpage
6
P
(W)
a=3 2.5 2
1.57
1.42
IF
(A)
2
4
1
2
0
0
1
IF(AV) (A)
2
0
0
2
4
VF (V)
6
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
δ
= 0.5.
Dotted line: T
j
= 150
°C.
Solid line: T
j
= 25
°C.
Fig.6
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Fig.7
Forward current as a function of forward
voltage; maximum values.
1996 Feb 19
5
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