DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BYV98
Fast soft-recovery rectifier
Product specification
Supersedes data of May 1993
1996 Jun 07
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Available in ammo-pack.
DESCRIPTION
Rugged glass SOD57 package,
using a high temperature alloyed
BYV98
construction. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
2/3 page
k
(Datasheet)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RSM
V
RRM
I
F(AV)
PARAMETER
non-repetitive peak reverse voltage
repetitive peak reverse voltage
average forward current
a
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
CONDITIONS
−
−
T
tp
= 55
°C;
lead length = 10 mm
see Fig. 2;
averaged over any 20 ms period;
see also Fig. 6
T
amb
= 60
°C;
PCB mounting (see
Fig.11); see Fig. 3;
averaged over any 20 ms period;
see also Fig. 6
T
tp
= 55
°C;
see Fig. 4
T
amb
= 60
°C;
see Fig. 5
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
see Fig.7
−
MIN.
MAX.
2100
2000
1.00
V
V
A
UNIT
I
F(AV)
average forward current
−
0.43
A
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward current
−
−
−
9.0
4.5
15
A
A
A
T
stg
T
j
storage temperature
junction temperature
−65
−65
+175
+175
°C
°C
1996 Jun 07
2
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
CONDITIONS
I
F
= 2 A; T
j
= T
j max
; see Fig. 8
I
F
= 2 A; see Fig. 8
V
R
= V
RRMmax
; see Fig. 9
V
R
= V
RRMmax
; T
j
= 125
°C;
see Fig. 9
t
rr
reverse recovery time
when switched from I
F
= 0.5 A
to I
R
= 1 A; measured at
I
R
= 0.25 A; see Fig. 12
f = 1 MHz; V
R
= 0 V; see Fig 10
when switched from I
F
= 1 A to
V
R
≥
30 V and dI
F
/dt =
−1
A/µs;
see Fig.13
MIN.
−
−
−
−
−
TYP.
−
−
−
−
−
MAX.
2.2
2.4
5
50
300
BYV98
UNIT
V
V
µA
µA
ns
C
d
dI
R
--------
dt
diode capacitance
maximum slope of
reverse recovery current
−
−
30
−
−
5
pF
A/µs
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.11.
For more information please refer to the
“General Part of associated Handbook”.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
lead length = 10 mm
note 1
VALUE
46
100
UNIT
K/W
K/W
1996 Jun 07
3
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
GRAPHICAL DATA
MGC601
BYV98
MGC600
handbook, halfpage
1.6
handbook, halfpage
0.6
IF(AV)
(A)
1.2
IF(AV)
(A)
0.4
0.8
0.2
0.4
0
0
100
Ttp ( C)
o
0
200
0
100
Tamb (
o
C)
200
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.11.
Switched mode application.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MGC603
handbook, full pagewidth
10
IFRM
(A)
8
δ
=
0.05
6
0.1
4
0.2
2
0.5
1.0
0
–2
10
10
–1
1
10
10
2
10
3
tp (ms)
10
4
T
tp
= 55°C; R
th j-tp
= 46 K/W.
V
RRMmax
during 1
− δ;
curves include derating for T
j max
at V
RRM
= 2000 V.
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Jun 07
4
Philips Semiconductors
Product specification
Fast soft-recovery rectifier
BYV98
MGC604
handbook, full pagewidth
5
IFRM
(A)
4
δ
=
0.05
3
0.1
2
0.2
1
0.5
1.0
0
–2
10
10
–1
1
10
10
2
10
3
tp (ms)
10
4
T
amb
= 60
°C;
R
th j-a
= 100 K/W.
V
RRMmax
during 1
− δ;
curves include derating for T
j max
at V
RRM
= 2000 V.
Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MGC599
handbook, halfpage
3
handbook, halfpage
200
MEA524 - 1
a=3
P
(W)
2.5 2
1.57
Tj
( o C)
1.42
2
100
1
0
0
0.5
IF(AV) (A)
1.0
0
0
1000
VR (V)
2000
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
δ
= 0.5.
Solid line = V
RRM
;
δ
= 0.1.
Dotted line = V
RRM
;
δ
= 0.5.
Fig.6
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Fig.7
Maximum permissible junction temperature
as a function of reverse voltage.
1996 Jun 07
5
FPGA/CPLD
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