UMF4N
Transistors
Power management (dual transistors)
UMF4N
2SA2018 and DTC123EE are housed independently in a UMT package.
!
Application
Power management circuit
!
External dimensions
(Units : mm)
(4)
!
Features
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
0.2
(3)
0.65
1.3
0.7
0.65
0.9
(6)
1.25
2.1
0~0.1
!
Structure
Silicon epitaxial planar transistor
0.15
0.1Min.
Each lead has same dimensions
!
Equivalent circuits
(3)
(2)
(1)
ROHM : UMT6
EIAJ : SC-88
DTr2
R
2
(4)
R
1
Tr1
(5)
R
1
=2.2kΩ
R
2
=2.2kΩ
(6)
!
Package, marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit(pieces)
UMF4N
UMT6
F4
TR
3000
(1)
2.0
(5)
(2)
1/4
UMF4N
Transistors
!
Absolute maximum ratings
(Ta=25°C)
Tr1
Limits
Symbol
−15
V
CBO
V
CEO
−12
V
EBO
−6
I
C
−500
Collector current
I
CP
−1.0
P
C
150(TOTAL)
Power dissipation
Tj
150
Junction temperature
Tstg
−55~+150
Range of storage temperature
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
∗1
Single pulse P
W
=1ms
∗2
120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
Unit
V
V
V
mA
A
mW
°C
°C
∗1
∗2
DTr2
Parameter
Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
Limits
V
CC
50
V
IN
−10~+20
100
I
C
100
I
O
150(TOTAL)
P
C
Tj
150
Tstg
−55~+150
Unit
V
V
mA
mA
mW
°C
°C
∗1
∗2
∗1
Characteristics of built-in transistor.
∗2
Each terminal mounted on a recommended land.
!
Electrical characteristics
(Ta=25°C)
Tr1
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−12
−15
−6
−
−
−
270
−
−
Typ.
−
−
−
−
−
−100
−
260
6.5
Max.
−
−
−
−100
−100
−250
680
−
−
Unit
V
V
V
nA
nA
mV
−
MHz
pF
Conditions
I
C
=−1mA
I
C
=−10µA
I
E
=−10µA
V
CB
=−15V
V
EB
=−6V
I
C
=−200mA,
I
B
=−10mA
V
CE
=−2V,
I
C
=−10mA
V
CE
=−2V,
I
E
=10mA,
f=100MHz
V
CB
=−10V,
I
E
=0mA,
f=1MHz
DTr2
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
∗
Characteristics of built-in transistor.
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
f
T
R
1
R
2
/R
1
Min.
−
3.0
−
−
−
20
−
1.54
0.8
Typ.
−
−
100
−
−
−
250
2.2
1.0
Max.
0.5
−
300
3.8
0.5
−
−
2.86
1.2
Unit
V
V
mV
mA
µA
−
MHz
kΩ
−
Conditions
V
CC
=5V,
I
O
=100µA
V
O
=0.3V,
I
O
=20mA
V
O
=10mA,
I
I
=0.5mA
V
I
=5V
V
CC
=50V,
V
I
=0V
V
O
=5V,
I
O
=20mA
V
CE
=10V,
I
E
=−5mA,
f=100MHz
∗
−
−
2/4
UMF4N
Transistors
!
Electrical characteristic curves
Tr1
1000
COLLECTOR CURRENT : I
C
(mA)
V
CE
=2V
Pulsed
DC CURRENT GAIN : h
FE
1000
Ta=125°C
Ta=25°C
Ta=−40°C
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
V
CE
=2V
Pulsed
1000
Ta=25°C
Pulsed
100
100
100
I
C
/I
B
=50
I
C
/I
B
=20
Ta=12
5
°
C
Ta=
−4
0°
C
Ta=25
°C
10
10
10
I
C
/I
B
=10
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
1
10
100
1000
1
1
10
100
1000
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.1 Grounded emitter propagation
characteristics
Fig.2
DC current gain vs.
Fig.3
Collector-emitter saturation voltage
collector current
vs. collector current (
Ι
)
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
100
Ta=25°C
Ta=125°C
1000
Ta=25°C
Ta=−40°C
TRANSITION FREQUENCY : f
T
(MHz)
I
C
/I
B
=20
Pulsed
BASER SATURATION VOLTAGE : V
BE (sat)
(mV)
1000
10000
I
C
/I
B
=20
Pulsed
1000
V
CE
=2V
Ta=25°C
Pulsed
100
Ta=125°C
Ta=−40°C
10
100
10
1
1
10
100
1000
10
1
10
100
1000
1
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : I
E
(mA)
Fig.4
Collector-emitter saturation voltage
Fig.5
Base-emitter saturation voltage
Fig.6
Gain bandwidth product
vs. collector current (
ΙΙ
)
vs. collector current
vs. emitter current
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
1000
TRANSITION FREQUENCY : I
C
(A)
I
E
=
0A
f
=
1MHz
Ta
=
25°C
10
Ta=25°C
Single Pulsed
1
10ms
100ms
DC
1ms
100
Cib
10
Cob
0.1
0.01
1
0.1
1
10
100
0.001
0.01
0.1
1
10
100
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER CURRENT : V
CE
(V)
Fig.7
Collector output capacitance
Fig.8
Safe operation area
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
3/4
UMF4N
Transistors
DTr2
100
50
INPUT VOLTAGE : V
I(on)
(V)
10m
5m
V
O
=0.3V
OUTPUT CURRENT : Io
(A)
V
CC
=5V
Ta=100°C
25°C
−40°C
1k
500
DC CURRENT GAIN : G
I
V
O
=5V
2m
1m
500µ
200µ
100µ
50µ
20µ
10µ
5µ
2µ
1µ
0
20
10
5
2
1
500m
200m
100m
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
Ta=−40°C
25°C
100°C
200
100
50
20
10
5
2
Ta=100°C
25°C
−40°C
0.5
1.0
1.5
2.0
2.5
3.0
1
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : V
I(off)
(V)
OUTPUT CURRENT : I
O
(A)
Fig.9 Input voltage vs. output current
(ON characteristics)
1
500m
OUTPUT VOLTAGE : V
O (on)
(V)
Fig.10 Output current vs. input voltage
(OFF characteristics)
Fig.11 DC current gain vs. output
current
l
O
/l
I
=20
200m
100m
50m
20m
10m
5m
2m
1m
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
Ta=100°C
25°C
−40°C
OUTPUT CURRENT : I
O
(A)
Fig.12 Output voltage vs. output
current
4/4
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
