AP90T03GI
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Fast Switching Performance
▼
Single Drive Requirement
▼
Full Isolation Package
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
30V
4mΩ
75A
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
G
D
S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Rating
30
+20
75
50
300
36.8
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
3.4
65
Units
℃/W
℃/W
Data and specifications subject to change without notice
1
200901192
AP90T03GI
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=45A
V
GS
=4.5V, I
D
=30A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=30A
V
DS
=30V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=40A
V
DS
=24V
V
GS
=4.5V
V
DS
=15V
I
D
=30A
R
G
=3.3Ω,V
GS
=10V
R
D
=0.5Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Min.
30
-
-
0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
55
-
-
60
8.5
38
14
83
66
120
1010
890
-
-
-
-
-
-
Max. Units
-
4
6
3
-
10
+100
96
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
4090 6540
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Test Conditions
I
S
=45A, V
GS
=0V
I
S
=30A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
51
63
Max. Units
1.3
-
-
V
ns
nC
t
rr
Q
rr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP90T03GI
200
160
T
C
=25
o
C
160
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
7.0V
5.0V
4.5V
V
G
=3.0V
T
C
=150 C
120
o
10V
7.0V
5.0V
4.5V
V
G
=3.0V
120
80
80
40
40
0
0
1
2
3
4
0
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
5
2.0
I
D
= 20 A
T
C
=25 C
4.6
o
I
D
=45A
V
G
=10V
Normalized R
DS(ON)
1.6
R
DS(ON)
(m
Ω
)
4.2
1.2
3.8
0.8
3.4
0.31
3
0.4
2
4
6
8
10
-50
0
50
100
t
rr
o
V
GS
, Gate-to-Source Voltage (V)
Q
rr
150
T
j
, Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
20
16
1.6
V
GS(th)
(V)
T
j
=150
o
C
T
j
=25
o
C
I
S
(A)
12
1.2
8
0.8
4
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
,Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP90T03GI
f=1.0MHz
12
10000
I
D
= 40 A
V
GS
, Gate to Source Voltage (V)
10
C
iss
V
DS
=15V
V
DS
=20V
V
DS
=24V
C (pF)
1000
8
6
C
oss
C
rss
4
2
0
0
20
40
60
80
100
120
100
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor=0.5
Normalized Thermal Response (R
thjc
)
0.2
100
100us
I
D
(A)
1ms
10
0.1
0.1
0.05
0.02
1
T
C
=25 C
Single Pulse
0.1
0.1
1
10
100
o
10ms
100ms
1s
DC
0.01
P
DM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.001
0.00001
0.31
0.0001
0.001
0.01
0.1
1
t
rr
Q
rr
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220CFM
E
A
SYMBOLS
MIN
Millimeters
NOM
MAX
c2
φ
A
A1
4.30
2.30
0.50
0.95
0.45
2.30
9.70
12.00
2.91
14.70
----
----
4.70
2.65
0.70
1.20
0.65
2.60
10.00
---
3.41
15.40
3.20
2.54
4.90
3.00
0.90
1.50
0.80
2.90
10.40
15.00
3.91
16.10
----
----
b
b1
c
c2
E
L4
L
L3
L4
φ
e
L3
b1
L
A1
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
b
c
e
Part Marking Information & Packing : TO-220CFM
LOGO
Part Number
90T03GI
YWWSSS
Package Code
Meet Rohs requirement
for low voltage MOSFET only
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
stm32/stm8
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