Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
BYV79E series
SYMBOL
QUICK REFERENCE DATA
V
R
= 150 V/ 200 V
V
F
≤
0.9 V
I
F(AV)
= 14 A
I
RRM
≤
0.2 A
t
rr
≤
30 ns
k
1
a
2
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
The BYV79E series is supplied in
the conventional leaded SOD59
(TO220AC) package.
PINNING
PIN
1
2
tab
DESCRIPTION
cathode
anode
cathode
SOD59 (TO220AC)
tab
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
PARAMETER
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average forward current
1
CONDITIONS
BYV79E
T
mb
≤
145˚C
MIN.
-
-
-
-
-
-
-
-
-
-40
-
-150
150
150
150
MAX.
-200
200
200
200
14
28
150
160
0.2
0.2
150
150
UNIT
V
V
V
A
A
A
A
A
A
˚C
˚C
I
RRM
I
RSM
T
stg
T
j
square wave
δ
= 0.5; T
mb
≤
120 ˚C
Repetitive peak forward current t = 25
µs; δ
= 0.5;
T
mb
≤
120 ˚C
Non-repetitive peak forward
t = 10 ms
current
t = 8.3 ms
sinusoidal; with reapplied
V
RWM(max)
Repetitive peak reverse current t
p
= 2
µs; δ
= 0.001
Non-repetitive peak reverse
t
p
= 100
µs
current
Storage temperature
Operating junction temperature
1. Neglecting switching and reverse current losses.
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge
capacitor voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
-
MAX.
8
UNIT
kV
July 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
in free air
-
BYV79E series
TYP.
-
60
MAX.
2
-
UNIT
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
Q
s
t
rr1
t
rr2
V
fr
PARAMETER
Forward voltage
Reverse current
Reverse recovery charge
Reverse recovery time
Reverse recovery time
Forward recovery voltage
CONDITIONS
I
F
= 14 A; T
j
= 150˚C
I
F
= 14 A
I
F
= 50 A
V
R
= V
RWM
; T
j
= 100 ˚C
V
R
= V
RWM
I
F
= 2 A; V
R
≥
30 V; -dI
F
/dt = 20 A/µs
I
F
= 1 A; V
R
≥
30 V;
-dI
F
/dt = 100 A/µs
I
F
= 0.5 A to I
R
= 1 A; I
rec
= 0.25 A
I
F
= 1 A; dI
F
/dt = 10 A/µs
MIN.
-
-
-
-
-
-
-
-
-
TYP.
0.83
0.95
1.2
0.5
5
6
20
13
1
MAX.
0.90
1.05
1.4
1.3
50
15
30
22
-
UNIT
V
V
V
mA
µA
nC
ns
ns
V
July 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV79E series
I
dI
F
dt
F
0.5A
IF
t
rr
time
0A
I rec = 0.25A
IR
trr2
Q
I
R
I
s
10%
100%
rrm
I = 1A
R
Fig.1. Definition of t
rr1
, Q
s
and I
rrm
Fig.4. Definition of t
rr2
I
F
20
PF / W
Vo = 0.744 V
Rs = 0.0112 Ohms
BYV79
Tmb(max) / C
110
D = 1.0
0.5
15
0.2
120
time
VF
10
0.1
130
5
I
t
p
D=
V
VF
time
t
p
T
t
140
fr
T
0
0
5
10
15
IF(AV) / A
20
150
25
Fig.2. Definition of V
fr
Fig.5. Maximum forward dissipation P
F
= f(I
F(AV)
);
square current waveform where I
F(AV)
=I
F(RMS)
x
√
D.
PF / W
Vo = 0.744 V
Rs = 0.0112 Ohms
R
15
BYV79
Tmb(max) / C
120
a = 1.57
1.9
2.2
D.U.T.
Voltage Pulse Source
10
4
2.8
130
Current
shunt
5
140
to ’scope
0
150
15
0
5
IF(AV) / A
10
Fig.3. Circuit schematic for t
rr2
Fig.6. Maximum forward dissipation P
F
= f(I
F(AV)
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
July 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV79E series
trr / ns
1000
1000 Qs / nC
IF=10A
100
IF=1A
10
100
IF=10A
5A
2A
10
1
1
10
dIF/dt (A/us)
100
1.0
1.0
10
-dIF/dt (A/us)
100
Fig.7. Maximum t
rr
at T
j
= 25 ˚C.
Fig.10. Maximum Q
s
at T
j
= 25 ˚C.
10
Irrm / A
10
Transient thermal impedance, Zth j-mb (K/W)
IF=10A
1
IF=2A
0.1
1
0.1
0.01
P
D
t
p
D=
t
p
T
t
0.01
1
10
-dIF/dt (A/us)
100
0.001
1us
T
10us
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BYV79E
10s
Fig.8. Maximum I
rrm
at T
j
= 25 ˚C.
Fig.11. Transient thermal impedance; Z
th j-mb
= f(t
p
).
60
50
40
30
20
IF / A
Tj = 150 C
Tj = 25 C
typ
10
max
0
0
0.5
1.0
VF / V
1.5
2
Fig.9. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
July 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
BYV79E series
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
3,0 max
not tinned
3,0
15,8
max
13,5
min
1,3
max
1
(2x)
2
0,9 max (2x)
0,6
2,4
5,08
Fig.12. SOD59 (TO220AC). pin 1 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
July 1998
5
Rev 1.200
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