MX0912B351Y
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI MX0912B351Y
is Designed
for General Purpose Class C Power
Amplifier Applications up to 1215 MHz.
PACKAGE STYLE .400 2L FLG
FEATURES:
•
P
G
= 7.0 dB min.at 50 W / 1215 MHz
•
Common Base
•
Omnigold™
Metalization System
MAXIMUM RATINGS
V
CE
V
CB
V
EB
I
C
P
DISS
T
J
T
STG
θ
JC
20 V
65 V
3.0 V
21 A
960 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +200 °C
0.18 °C/W
1 = COLLECTOR 2 = BASE 3 = EMITTER
CHARACTERISTICS
SYMBOL
I
CBO
I
CES
I
EBO
P
G
η
C
V
CC
= 50
V
CB
= 65 V
V
CE
= 60 V
V
EB
= 1.5 V
T
C
= 25 °C
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
140
140
1.4
7.0
40
UNITS
mA
mA
mA
dB
%
P
OUT
= 325 W
f = 960 - 1215 MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/3
ERROR! REFERENCE SOURCE NOT FOUND.
MX0912B351Y
TYPICAL PERFORMANCE
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
2/3
ERROR! REFERENCE SOURCE NOT FOUND.
MX0912B351Y
IMPEDANCE DATA
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
3/3
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