Philips Semiconductors
Product specification
Dual rectifier diodes
ultrafast
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Isolated mounting tab
BYV74F series
SYMBOL
QUICK REFERENCE DATA
V
R
= 300 V/ 400 V/ 500 V
a1
1
k 2
a2
3
V
F
≤
1.12 V
I
O(AV)
= 20 A
t
rr
≤
60 ns
SOT199
GENERAL DESCRIPTION
Dual, common cathode, ultra-fast,
epitaxial rectifier diodes intended
for use as output rectifiers in high
frequency switched mode power
supplies.
The BYV74F series is supplied in
the conventional leaded SOT199
package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
anode 1
cathode
anode 2
isolated
case
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
PARAMETER
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average rectified output current
(both diodes conducting)
1
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode.
Storage temperature
Operating junction temperature
CONDITIONS
BYV74F
T
mb
≤
117˚C
square wave;
δ
= 0.5;
T
hs
≤
54 ˚C
t = 25
µs; δ
= 0.5;
T
hs
≤
54 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RRM(max)
-
-
-
-
-
-
-
-40
-
MIN.
-300
300
300
300
MAX.
-400
400
400
400
20
30
150
160
150
150
-500
500
500
500
UNIT
V
V
V
A
A
A
A
˚C
˚C
T
stg
T
j
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
Repetitive peak voltage from all
three terminals to external
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
-
MAX.
2500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
22
-
pF
1
Neglecting switching and reverse current losses.
September 1998
1
Rev 1.300
Philips Semiconductors
Product specification
Dual rectifier diodes
ultrafast
THERMAL RESISTANCES
SYMBOL
R
th j-hs
PARAMETER
Thermal resistance junction to
heatsink
CONDITIONS
both diodes conducting
with heatsink compound
without heatsink compound
per diode
with heatsink compound
without heatsink compound
in free air.
MIN.
-
-
-
-
-
BYV74F series
TYP.
-
-
-
-
35
MAX.
4.0
8.0
5.0
9.0
-
UNIT
K/W
K/W
K/W
K/W
K/W
R
th j-a
Thermal resistance junction to
ambient
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
Q
s
t
rr
I
rrm
V
fr
PARAMETER
Forward voltage
Reverse current
Reverse recovery charge
Reverse recovery time
Peak reverse recovery current
Forward recovery voltage
CONDITIONS
I
F
= 15 A; T
j
= 150˚C
I
F
= 15 A
I
F
= 30 A
V
R
= V
RRM
V
R
= V
RRM
; T
j
= 100 ˚C
I
F
= 2 A to V
R
≥
30 V;
dI
F
/dt = 20 A/µs
I
F
= 1 A to V
R
≥
30 V;
dI
F
/dt = 100 A/µs
I
F
= 10 A to V
R
≥
30 V;
dI
F
/dt = 50 A/µs; T
j
= 100˚C
I
F
= 10 A; dI
F
/dt = 10 A/µs
MIN.
-
-
-
-
-
-
-
-
-
TYP.
0.95
1.08
1.15
10
0.3
40
50
4.2
2.5
MAX.
1.12
1.25
1.36
50
0.8
60
60
5.2
-
UNIT
V
V
V
µA
mA
nC
ns
A
V
September 1998
2
Rev 1.300
Philips Semiconductors
Product specification
Dual rectifier diodes
ultrafast
BYV74F series
I
dI
F
dt
F
20
PF / W
Vo = 0.89
Rs = 0.0137
BYV44
Ths(max) / C
a = 1.57
1.9
2.2
50
t
15
75
rr
time
10
4
2.8
100
Q
I
R
I
s
10%
100%
5
125
rrm
0
0
5
IF(AV) / A
10
150
15
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.4. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
trr / ns
I
F
1000
IF=20 A
100
time
VF
V
VF
time
fr
1
1
10
Tj = 25 C
Tj = 100 C
1A
10
dIF/dt (A/us)
100
Fig.2. Definition of V
fr
Fig.5. Maximum t
rr
at T
j
= 25˚C and 100˚C; per diode
30
25
20
15
PF / W
Vo = 0.8900 V
Rs = 0.0137 Ohms
BYV44
Ths(max) / C
10
Irrm / A
D = 1.0
0.5
0.2
0.1
25
IF= 20 A
50
75
t
p
T
t
1
IF=1A
10
5
I
t
p
D=
100
125
0.1
Tj = 25 C
Tj = 100 C
0.01
1
10
-dIF/dt (A/us)
100
T
0
0
5
10
15
IF(AV) / A
20
150
25
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square wave where I
F(AV)
=I
F(RMS)
x
√
D.
Fig.6. Maximum I
rrm
at T
j
= 25˚C and 100˚C; per
diode.
September 1998
3
Rev 1.300
Philips Semiconductors
Product specification
Dual rectifier diodes
ultrafast
BYV74F series
50
IF / A
Tj = 25 C
Tj = 150 C
BYV74
10
Transient thermal impedance, Zth j-hs (K/W)
40
1
30
typ
20
max
0.1
0.01
10
P
D
t
p
D=
t
p
T
t
0
0
0.5
1
VF / V
1.5
2
0.001
1us
T
10us
100us 1ms
10ms 100ms
1s
10s
pulse width, tp (s)
BYV42F/EX
Fig.7. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.9. Transient thermal impedance per diode
Z
th j-hs
= f(t
p
)
1000
Qs / nC
IF = 20 A
100
2A
10
1
1.0
10
-dIF/dt (A/us)
100
Fig.8. Maximum Q
s
at T
j
= 25˚C; per diode
September 1998
4
Rev 1.300
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