1N4614 THRU 1N4627
SILICON ZENER DIODE
LOW NOISE
1.8 VOLT THRU 6.2 VOLT
250mW, 5% TOLERANCE
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N4614 series
silicon Zener diode is designed for low leakage, low
current, and low noise applications. Higher voltage
devices are available in the 1N4099 series.
MARKING: FULL PART NUMBER
DO-35 CASE
MAXIMUM RATINGS:
(TA=25°C)
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
PD
TJ, Tstg
250
-65 to +200
UNITS
mW
°C
ELECTRICAL CHARACTERISTICS:
(TA=25°C) VF=1.0V MAX @ IF=200mA (for all types)
ZENER
VOLTAGE
VZ @ IZT
MIN
V
1N4614
1N4615
1N4616
1N4617
1N4618
1N4619
1N4620
1N4621
1N4622
1N4623
1N4624
1N4625
1N4626
1N4627
1.710
1.900
2.090
2.280
2.565
2.850
3.135
3.420
3.705
4.085
4.465
4.845
5.320
5.890
NOM
V
1.8
2.0
2.2
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
MAX
V
1.890
2.100
2.310
2.520
2.835
3.150
3.465
3.780
4.095
4.515
4.935
5.355
5.880
6.510
TEST
CURRENT
IZT
μA
250
250
250
250
250
250
250
250
250
250
250
250
250
250
MAXIMUM
ZENER
IMPEDANCE
ZZT @ IZT
Ω
1200
1250
1300
1400
1500
1600
1650
1700
1650
1600
1550
1500
1400
1200
MAXIMUM
REVERSE
CURRENT
IR
μA
7.5
5.0
4.0
2.0
1.0
0.8
7.5
7.5
5.0
4.0
10
10
10
10
@ VR
V
1.0
1.0
1.0
1.0
1.0
1.0
1.5
2.0
2.0
2.0
3.0
3.0
4.0
5.0
MAXIMUM
ZENER
CURRENT
IZM
mA
120
110
100
95
90
85
80
75
70
65
60
55
50
45
MAXIMUM
NOISE
DENSITY
ND @ 250μA
μV/ Hz
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
4.0
5.0
TYPE
R3 (1-May 2013)
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PRODUCT SUPPORT
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nd
day air)
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• Up-screening capabilities
REQUESTING PRODUCT PLATING
1.
2.
If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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