SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 1848,REV.-
206CNQ200
206CNQ200 SCHOTTKY RECTIFIER
Applications:
•
High current switching power supply
•
Plating power supply
•
Free-Wheeling diodes
•
Reverse battery protection
•
Converters
•
UPS system
•
Welding
Features:
•
•
•
•
•
•
175 °C T
J
operation
Center tap module
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
Mechanical Dimensions: In Inches / mm
ANODE 1
ANODE 2
1
3
2
COMMON
CATHODE
BASE
PRM4(Non-Isolated)
•
221 West Industry Court
!
Deer Park, NY 11729-4681
!
(516) 586-7600 FAX (516) 242-9798
•
•
World Wide Web Site - http://www.sensitron.com
•
E-Mail Address - sales@sensitron.com
•
SENSITRON
SEMICONDUCTOR
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current
Max. Peak One Cycle Non-
Repetitive Surge Current
(per leg)
Non-Repetitive Avalanche
Energy (per leg)
Repetitive Avalanche
Current (per leg)
Symbol
V
RWM
I
F(AV)
Condition
-
50% duty cycle @T
C
=110°C,
rectangular wave form
8.3 ms, half Sine pulse
T
J
= 25
°C,
I
AS
= 1 A,
L = 30 mH
Current decaying linearly to
zero in 1 µsec Frequency
limited by T
J
max. V
A
= 1.5 x
V
R
typical
206CNQ200
100
200
Max.
200
per leg
per device
1440
15
Units
V
A
I
FSM
E
AS
A
mJ
A
I
AR
1
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
(per leg)*
Symbol
V
F1
V
F2
Max. Reverse Current (per
leg)*
I
R1
I
R2
Max. Junction Capacitance
(per leg)
Typical Series Inductance
(per leg)
Max. Voltage Rate of
Change
*
Pulse Width < 300µs, Duty Cycle <2%
C
T
L
S
dv/dt
Condition
@ 100A, Pulse, T
J
= 25
°C
@ 200 A, Pulse, T
J
= 25
°C
@ 100 A, Pulse, T
J
= 125
°C
@ 200 A, Pulse, T
J
= 125
°C
@V
R
= rated V
R
T
J
= 25
°C
@V
R
= rated V
R
T
J
= 125
°C
@V
R
= 5V, T
C
= 25
°C
f
SIG
= 1MHz
Measured lead to lead 5 mm
from package body
-
Max.
0.99
1.15
0.79
0.92
3.0
40
2500
7.0
10,000
Units
V
V
mA
mA
pF
nH
V/µs
Thermal-Mechanical Specifications:
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal Resistance
Junction to Case (per leg)
Maximum Thermal Resistance
Junction to Case
(per package)
Maximum Thermal
Resistance, Case to Heat Sink
Approximate Weight
Mounting Torque
Symbol
T
J
T
stg
R
θJC
R
θJC
R
θCS
wt
T
M
Condition
-
-
DC operation
DC operation
Specification
-55 to +175
-55 to +175
0.40
0.20
Units
°C
°C
°C/W
°C/W
°C/W
24 (min)
35 (max)
35(min)
46 (max)
13.5
(Typ)
g
Kg-cm
Mounting surface,
smooth and greased
-
-
0.10
79
Case Style
Mounting
Torque Base
Terminal
Torque
Mounting
Torque Center
Hole
PRM4 (Non-Isolated)
•
221 West Industry Court
!
Deer Park, NY 11729-4681
!
(516) 586-7600 FAX (516) 242-9798
•
•
World Wide Web Site - http://www.sensitron.com
•
E-Mail Address - sales@sensitron.com
•
SENSITRON
SEMICONDUCTOR
206CNQ200
Typical Forward Characteristics
10
2
Instantaneous Reverse Current -
R
(mA)
I
10
2
Typical Reverse Characteristics
200 °C
175 °C
150 °C
10
0
10
1
200 °C
125 °C
100 °C
75 °
Instantaneous Forward Current -
F
(A)
I
10
1
175 °C
10
-1
10
-2
50 °C
10
-3
25 °C
10
0
125 °C
0
40
80
120
160
Reverse Voltage - V
R
(V)
200
240
Typical Junction Capacitance
Junction Capacitance - C
T
(pF)
1.0
25 °C
10
-1
2000
1500
1000
500
0
0
40
80
120
160
Reverse Voltage - V
R
(V)
200
240
10
-2
0.0
0.2
0.4
0.6
0.8
Forward Voltage Drop - V
F
(V)
•
221 West Industry Court
!
Deer Park, NY 11729-4681
!
(516) 586-7600 FAX (516) 242-9798
•
•
World Wide Web Site - http://www.sensitron.com
•
E-Mail Address - sales@sensitron.com
•
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
