Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
GENERAL DESCRIPTION
Glass passivated, high efficiency,
dual, rectifier diodes in a full pack,
plastic envelope, featuring low
forward voltage drop, ultra-fast
recovery times and soft recovery
characteristic. They are intended for
use in switched mode power supplies
and high frequency circuits in general
where low conduction and switching
losses are essential.
BYV72F series
QUICK REFERENCE DATA
SYMBOL
V
RRM
V
F
I
O(AV)
t
rr
PARAMETER
BYV72F-
Repetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
Reverse recovery time
MAX.
100
100
0.90
20
28
MAX.
150
150
0.90
20
28
MAX.
200
200
0.90
20
28
UNIT
V
V
A
ns
PINNING - SOT199
PIN
1
2
3
DESCRIPTION
anode 1 (a)
cathode (k)
anode 2 (a)
PIN CONFIGURATION
case
SYMBOL
a1
1
k2
1
2
3
a2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
PARAMETER
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
1
Output current (both diodes
conducting)
2
RMS forward current
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
I
2
t for fusing
Storage temperature
Operating junction temperature
square wave;
δ
= 0.5;
T
hs
≤
78 ˚C
sinusoidal; a = 1.57;
T
hs
≤
78 ˚C
t = 25
µs; δ
= 0.5;
T
hs
≤
78 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RWM(max)
t = 10 ms
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-40
-
-100
100
100
100
MAX.
-150
150
150
150
20
20
20
30
150
160
112
150
150
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
A
2
s
˚C
˚C
I
O(RMS)
I
FRM
I
FSM
I
2
t
T
stg
T
j
1
T
hs
≤
125˚C for thermal stability.
2
Neglecting switching and reverse current losses.
October 1994
1
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
Repetitive peak voltage from all
three terminals to external
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
BYV72F series
TYP.
MAX.
2500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
22
-
pF
THERMAL RESISTANCES
SYMBOL
R
th j-hs
PARAMETER
Thermal resistance junction to
heatsink
CONDITIONS
both diodes conducting
with heatsink compound
without heatsink compound
per diode
with heatsink compound
without heatsink compound
in free air
MIN.
-
-
-
-
-
TYP.
-
-
-
-
35
MAX.
4.0
8.0
5.0
9.0
-
UNIT
K/W
K/W
K/W
K/W
K/W
R
th j-a
Thermal resistance junction to
ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
PARAMETER
Forward voltage (per diode)
Reverse current (per diode)
CONDITIONS
I
F
= 15 A; T
j
= 150˚C
I
F
= 15 A
I
F
= 30 A
V
R
= V
RWM
; T
j
= 100 ˚C
V
R
= V
RWM
MIN.
-
-
-
-
-
TYP.
0.83
0.95
1.00
0.5
10
MAX.
0.90
1.05
1.20
1
100
UNIT
V
V
V
mA
µA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
Q
s
t
rr
I
rrm
V
fr
PARAMETER
Reverse recovery charge (per
diode)
Reverse recovery time (per
diode)
Peak reverse recovery current
(per diode)
Forward recovery voltage (per
diode)
CONDITIONS
I
F
= 2 A; V
R
≥
30 V; -dI
F
/dt = 20 A/µs
I
F
= 1 A; V
R
≥
30 V;
-dI
F
/dt = 100 A/µs
I
F
= 10 A; V
R
≥
30 V;
-dI
F
/dt = 50 A/µs; T
j
= 100 ˚C
I
F
= 1 A; dI
F
/dt = 10 A/µs
MIN.
-
-
-
-
TYP.
6
20
2
1
MAX.
15
28
2.4
-
UNIT
nC
ns
A
V
October 1994
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV72F series
I
dI
F
dt
F
20
PF / W
Vo = 0.705 V
Rs = 0.013 Ohms
BYV72
Ths(max) / C
50
a = 1.57
t
15
1.9
2.2
2.8
75
rr
time
10
4
100
Q
I
R
I
s
10%
100%
5
125
rrm
0
0
5
IF(AV) / A
10
150
15
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.4. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
trr / ns
1000
I
F
IF=20A
100
time
IF=1A
VF
V
VF
time
fr
10
1
1
10
dIF/dt (A/us)
100
Fig.2. Definition of V
fr
Fig.5. Maximum t
rr
at T
j
= 25 ˚C; per diode
25
PF / W
Vo = 0.7050 V
Rs = 0.0130 Ohms
BYV72
Ths(max) / C
D = 1.0
25
trr / ns
1000
20
0.5
15
0.1
10
I
t
p
D=
t
p
T
50
IF=20A
100
0.2
75
IF=1A
100
10
5
T
t
125
Tj = 100 C
0
0
5
10
15
IF(AV) / A
20
150
25
1
1
10
-dIF/dt (A/us)
100
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
Fig.6. Maximum t
rr
at T
j
= 100 ˚C; per diode
October 1994
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYV72F series
10
Irrm / A
100 Qs / nC
IF=20A
1
IF=1A
IF=20A
10A
5A
2A
1A
10
0.1
0.01
1
10
-dIF/dt (A/us)
100
1.0
1.0
10
-dIF/dt (A/us)
100
Fig.7. Maximum I
rrm
at T
j
= 25 ˚C; per diode
Fig.10. Maximum Q
s
at T
j
= 25 ˚C; per diode
10
IF / A
10
Zth (K/W)
IF=20A
1
IF=1A
1
0.1
0.1
P
D
t
p
Tj = 100 C
0.01
1
10
-dIF/dt (A/us)
100
0.01
10 us
1 ms
0.1
t
tp / s
10 s
Fig.8. Maximum I
rrm
at T
j
= 100 ˚C; per diode
Fig.11. Transient thermal impedance; per diode;
Z
th j-hs
= f(t
p
).
50
IF / A
Tj = 150 C
40
Tj = 25 C
30
20
typ
10
max
0
0
0.5
VF / V
1.0
1.5
Fig.9. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
October 1994
4
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
MECHANICAL DATA
Dimensions in mm
Net Mass: 5.5 g
BYV72F series
15.3 max
0.7
7.3
3.1
3.3
6.2
5.8
21.5
max
3.2
5.2 max
o
45
seating
plane
3.5
3.5 max
not tinned
15.7
min
1
2.1 max
2
3
1.2
1.0
5.45
0.7 max
0.4 M
2.0
5.45
Fig.12. SOT199; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1994
5
Rev 1.100
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