Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
BYV72EW series
SYMBOL
QUICK REFERENCE DATA
V
R
= 150 V/ 200 V
V
F
≤
0.85 V
I
O(AV)
= 30 A
I
RRM
= 0.2 A
t
rr
≤
28 ns
a1
1
k 2
a2
3
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier
diodes intended for use as output
rectifiers in high frequency switched
mode power supplies.
The BYV72EW series is supplied in
the conventional leaded SOT429
(TO247) package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
anode 1
cathode
anode 2
cathode
SOT429 (TO247)
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
PARAMETER
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average rectified output current
(both diodes conducting)
1
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
CONDITIONS
BYV72EW
T
mb
≤
144˚C
-
-
-
-
-
-
-
-
-
-40
-
MIN.
-150
150
150
150
30
30
150
160
0.2
0.2
150
150
MAX.
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
˚C
˚C
I
RRM
I
RSM
T
stg
T
j
square wave
δ
= 0.5; T
mb
≤
104 ˚C
t = 25
µs; δ
= 0.5;
T
mb
≤
104 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RWM(max)
Repetitive peak reverse current t
p
= 2
µs; δ
= 0.001
per diode
Non-repetitive peak reverse
t
p
= 100
µs
current per diode
Storage temperature
Operating junction temperature
1 Neglecting switching and reverse current losses.
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge
capacitor voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
-
MAX.
8
UNIT
kV
October 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
per diode
both diodes conducting
in free air
MIN.
-
-
-
BYV72EW series
TYP.
-
-
45
MAX.
2.4
1.4
-
UNIT
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
Q
s
t
rr1
t
rr2
V
fr
PARAMETER
Forward voltage
Reverse current
Reverse recovery charge
Reverse recovery time
Reverse recovery time
Forward recovery voltage
CONDITIONS
I
F
= 15 A; T
j
= 150˚C
I
F
= 15 A
I
F
= 30 A
V
R
= V
RWM
; T
j
= 100 ˚C
V
R
= V
RWM
I
F
= 2 A; V
R
≥
30 V; -dI
F
/dt = 20 A/µs
I
F
= 1 A; V
R
≥
30 V;
-dI
F
/dt = 100 A/µs
I
F
= 0.5 A to I
R
= 1 A; I
rec
= 0.25 A
I
F
= 1 A; dI
F
/dt = 10 A/µs
MIN.
-
-
-
-
-
-
-
-
-
TYP.
0.83
0.95
1.00
0.5
10
6
20
13
1
MAX.
0.90
1.05
1.20
1
100
15
28
22
-
UNIT
V
V
V
mA
µA
nC
ns
ns
V
October 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV72EW series
I
dI
F
dt
F
0.5A
IF
t
rr
time
0A
I rec = 0.25A
IR
trr2
Q
I
R
I
s
10%
100%
rrm
I = 1A
R
Fig.1. Definition of t
rr1
, Q
s
and I
rrm
Fig.4. Definition of t
rr2
I
F
20
PF / W
Vo = 0.705 V
Rs = 0.0097 Ohms
BYV42
Tmb(max) / C
102
D = 1.0
0.5
15
114
time
VF
10
0.1
0.2
126
5
I
t
p
D=
t
p
T
t
138
V
VF
time
fr
T
0
0
5
10
15
IF(AV) / A
20
150
25
Fig.2. Definition of V
fr
Fig.5. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
PF / W
Vo = 0.705 V
Rs = 0.0097 Ohms
R
15
BYV42
Tmb(max) / C
114
a = 1.57
1.9
2.2
D.U.T.
Voltage Pulse Source
10
4
2.8
126
Current
shunt
5
138
to ’scope
0
150
15
0
5
IF(AV) / A
10
Fig.3. Circuit schematic for t
rr2
Fig.6. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
October 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV72EW series
trr / ns
1000
100 Qs / nC
IF=20A
10A
5A
2A
1A
10
IF=20A
100
IF=1A
10
1
1
10
dIF/dt (A/us)
100
1.0
1.0
10
-dIF/dt (A/us)
100
Fig.7. Maximum t
rr
at T
j
= 25 ˚C; per diode
Fig.10. Maximum Q
s
at T
j
= 25 ˚C; per diode
10
Irrm / A
10
Transient thermal impedance, Zth j-mb (K/W)
IF=20A
1
1
IF=1A
0.1
0.1
0.01
P
D
t
p
D=
t
p
T
t
0.01
1
10
-dIF/dt (A/us)
100
0.001
1us
T
10us
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BYV42E
10s
Fig.8. Maximum I
rrm
at T
j
= 25 ˚C; per diode
Fig.11. Transient thermal impedance; per diode;
Z
th j-mb
= f(t
p
).
50
IF / A
Tj = 150 C
40
Tj = 25 C
30
20
typ
10
max
0
0
0.5
VF / V
1.0
1.5
Fig.9. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
October 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
5.3
3.5
21
max
15.5
max
seating
plane
7.3
16 max
5.3 max
1.8
o 3.5
max
BYV72EW series
2.5
4.0
max
1
2.2 max
3.2 max
5.45
2
3
0.9 max
1.1
5.45
0.4 M
15.5
min
Fig.12. SOT429 (TO247); pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT429 envelope.
2. Epoxy meets UL94 V0 at 1/8".
October 1998
5
Rev 1.200
Microchip MCU
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