Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Isolated mounting tab
BYV72EF series
SYMBOL
QUICK REFERENCE DATA
V
R
= 150 V/ 200 V
a1
1
k 2
a2
3
V
F
≤
0.9 V
I
O(AV)
= 20 A
I
RRM
= 0.2 A
t
rr
≤
28 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier
diodes intended for use as output
rectifiers in high frequency switched
mode power supplies.
The BYV72EF series is supplied in
the conventional leaded SOT199
package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
anode 1 (a)
cathode (k)
anode 2 (a)
isolated
SOT199
case
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
PARAMETER
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average rectified output current
(both diodes conducting)
1
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
CONDITIONS
BYV72EF
T
hs
≤
125˚C
-
-
-
-
-
-
-
-
-
-40
-
MIN.
-150
150
150
150
20
30
150
160
0.2
0.2
150
150
MAX.
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
˚C
˚C
I
RRM
I
RSM
T
stg
T
j
square wave
δ
= 0.5; T
hs
≤
78 ˚C
t = 25
µs; δ
= 0.5;
T
hs
≤
78 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RWM(max)
Repetitive peak reverse current t
p
= 2
µs; δ
= 0.001
per diode
Non-repetitive peak reverse
t
p
= 100
µs
current per diode
Storage temperature
Operating junction temperature
1
Neglecting switching and reverse current losses.
July 1998
1
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge
capacitor voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
-
BYV72EF series
MAX.
8
UNIT
kV
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
Repetitive peak voltage from all
three terminals to external
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
-
MAX.
2500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
22
-
pF
THERMAL RESISTANCES
SYMBOL
R
th j-hs
PARAMETER
Thermal resistance junction to
heatsink
CONDITIONS
both diodes conducting
with heatsink compound
without heatsink compound
per diode
with heatsink compound
without heatsink compound
in free air
MIN.
-
-
-
-
-
TYP.
-
-
-
-
35
MAX.
4.0
8.0
5.0
9.0
-
UNIT
K/W
K/W
K/W
K/W
K/W
R
th j-a
Thermal resistance junction to
ambient
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
Q
s
t
rr1
t
rr2
V
fr
PARAMETER
Forward voltage
Reverse current
Reverse recovery charge
Reverse recovery time
Reverse recovery time
Forward recovery voltage
CONDITIONS
I
F
= 15 A; T
j
= 150˚C
I
F
= 15 A
I
F
= 30 A
V
R
= V
RWM
; T
j
= 100 ˚C
V
R
= V
RWM
I
F
= 2 A; V
R
≥
30 V; -dI
F
/dt = 20 A/µs
I
F
= 1 A; V
R
≥
30 V;
-dI
F
/dt = 100 A/µs
I
F
= 0.5 A to I
R
= 1 A; I
rec
= 0.25 A
I
F
= 1 A; dI
F
/dt = 10 A/µs
MIN.
-
-
-
-
-
-
-
-
-
TYP.
0.83
0.95
1.00
0.5
10
6
20
13
1
MAX.
0.90
1.05
1.20
1
100
15
28
22
-
UNIT
V
V
V
mA
µA
nC
ns
ns
V
July 1998
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV72EF series
I
dI
F
dt
F
0.5A
IF
t
rr
time
0A
I rec = 0.25A
IR
trr2
Q
I
R
I
s
10%
100%
rrm
I = 1A
R
Fig.1. Definition of t
rr1
, Q
s
and I
rrm
Fig.4. Definition of t
rr2
I
F
25
PF / W
Vo = 0.7050 V
Rs = 0.0130 Ohms
BYV72
Ths(max) / C
D = 1.0
25
20
0.5
15
50
time
0.1
0.2
75
VF
V
VF
time
fr
10
I
t
p
D=
t
T
p
100
5
T
t
125
0
0
5
10
15
IF(AV) / A
20
150
25
Fig.2. Definition of V
fr
Fig.5. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
PF / W
Vo = 0.705 V
Rs = 0.013 Ohms
R
20
BYV72
Ths(max) / C
50
a = 1.57
15
1.9
2.2
2.8
10
4
100
75
D.U.T.
Voltage Pulse Source
Current
shunt
5
125
to ’scope
0
0
5
IF(AV) / A
10
150
15
Fig.3. Circuit schematic for t
rr2
Fig.6. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
July 1998
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV72EF series
trr / ns
1000
100 Qs / nC
IF=20A
10A
5A
2A
1A
10
IF=20A
100
IF=1A
10
1
1
10
dIF/dt (A/us)
100
1.0
1.0
10
-dIF/dt (A/us)
100
Fig.7. Maximum t
rr
at T
j
= 25 ˚C; per diode
Fig.10. Maximum Q
s
at T
j
= 25 ˚C; per diode
10
Irrm / A
10
Transient thermal impedance, Zth j-hs (K/W)
IF=20A
1
1
IF=1A
0.1
0.1
0.01
P
D
t
p
D=
t
p
T
t
0.01
1
10
-dIF/dt (A/us)
100
0.001
1us
T
10us
100us 1ms
10ms 100ms
1s
10s
pulse width, tp (s)
BYV42F/EX
Fig.8. Maximum I
rrm
at T
j
= 25 ˚C; per diode
Fig.11. Transient thermal impedance; per diode;
Z
th j-hs
= f(t
p
).
50
IF / A
Tj = 150 C
40
Tj = 25 C
30
20
typ
10
max
0
0
0.5
VF / V
1.0
1.5
Fig.9. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
July 1998
4
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 5.5 g
BYV72EF series
15.3 max
0.7
7.3
3.1
3.3
6.2
5.8
21.5
max
3.2
5.2 max
o
45
seating
plane
3.5
3.5 max
not tinned
15.7
min
1
2.1 max
2
3
1.2
1.0
5.45
0.7 max
0.4 M
2.0
5.45
Fig.12. SOT199; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
July 1998
5
Rev 1.100
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
