TO
-22
0A
C
BYC5D-500
Hyperfast power diode
Rev. 1 — 6 July 2011
Product data sheet
1. Product profile
1.1 General description
Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package.
1.2 Features and benefits
Low reverse recovery current and low
thermal resistance
Reduces switching losses in
associated MOSFET
1.3 Applications
Continuous Current Mode (CCM)
Power Factor Correction (PFC)
Half-bridge/full-bridge switched-mode
power supplies
Half-bridge lighting ballasts
1.4 Quick reference data
Table 1.
Symbol
V
RRM
I
F(AV)
Quick reference data
Parameter
repetitive peak
reverse voltage
average forward
current
square-wave pulse;
δ
= 0.5 ;
T
mb
≤
129 °C; see
Figure 1;
see
Figure 2
I
F
= 5 A; T
j
= 25 °C;
see
Figure 5
I
F
= 5 A; T
j
= 150 °C;
see
Figure 5
Dynamic characteristics
t
rr
reverse recovery time I
F
= 5 A; V
R
= 400 V;
dI
F
/dt = 500 A/µs; T
j
= 25 °C;
see
Figure 6
-
16
-
ns
Conditions
Min
-
-
Typ
-
-
Max
500
5
Unit
V
A
Static characteristics
V
F
forward voltage
-
-
1.5
1.15
2
1.45
V
V
NXP Semiconductors
BYC5D-500
Hyperfast power diode
2. Pinning information
Table 2.
Pin
1
2
mb
Pinning information
Symbol Description
K
A
mb
cathode
anode
mounting base;
connected to cathode
mb
K
A
001aaa020
Simplified outline
Graphic symbol
1
2
SOD59 (TO-220AC)
3. Ordering information
Table 3.
Ordering information
Package
Name
BYC5D-500
TO-220AC
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 2-lead TO-220AC
Version
SOD59
Type number
BYC5D-500
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 6 July 2011
2 of 11
NXP Semiconductors
BYC5D-500
Hyperfast power diode
4. Limiting values
Table 4.
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
Limiting values
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
DC
square-wave pulse;
δ
= 0.5 ;
T
mb
≤
129 °C;
see
Figure 1;
see
Figure 2
square-wave pulse;
δ
= 0.5 ;
t
p
= 25 µs; T
mb
≤
129 °C
t
p
= 8.3 ms; sine-wave pulse;
T
j(init)
= 25 °C;
see
Figure 3
t
p
= 10 ms; sine-wave pulse;
T
j(init)
= 25 °C;
see
Figure 3
T
stg
T
j
storage temperature
junction temperature
Conditions
Min
-
-
-
-
Max
500
500
500
5
Unit
V
V
V
A
In accordance with the Absolute Maximum Rating System (IEC 60134).
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward
current
-
-
10
44
A
A
-
40
A
-40
-
150
150
°C
°C
P
tot
(W)
10
12
003aag305
δ=1
0.5
10
P
tot
(W)
8
2.2
2.8
4.0
1.9
003aag306
a = 1.57
8
0.2
6
4
2
2
0.1
4
6
0
0
2
4
6
I
F(AV)
(A)
8
0
0
1
2
3
4
5
I
F(AV)
(A)
Fig 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYC5D-500
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 6 July 2011
3 of 11
NXP Semiconductors
BYC5D-500
Hyperfast power diode
10
3
P
003aag307
I
FSM
(A)
t
p
t
10
2
10
1
10
-5
10
-4
10
-3
t
p
(s)
10
-2
Fig 3.
Non-repetitive peak forward current as a function of pulse width; square waveform; maximum values
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient free air
Conditions
see
Figure 4
in free air
Min
-
-
Typ
-
60
Max
2.5
-
Unit
K/W
K/W
10
Z
th(j-mb)
(K/W)
1
001aag913
10
−1
P
δ
=
t
p
T
10
−2
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
t
p
(s)
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse width
BYC5D-500
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 6 July 2011
4 of 11
NXP Semiconductors
BYC5D-500
Hyperfast power diode
6. Characteristics
Table 6.
Symbol
V
F
Characteristics
Parameter
forward voltage
Conditions
I
F
= 10 A; T
j
= 150 °C; see
Figure 5
I
F
= 5 A; T
j
= 25 °C; see
Figure 5
I
F
= 5 A; T
j
= 150 °C; see
Figure 5
I
R
reverse current
V
R
= 500 V
V
R
= 500 V; T
j
= 100 °C
Dynamic characteristics
t
rr
reverse recovery time
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 50 A/µs;
T
j
= 25 °C; see
Figure 6
I
F
= 5 A; V
R
= 400 V; dI
F
/dt = 500 A/µs;
T
j
= 25 °C; see
Figure 6
I
RM
peak reverse recovery
current
I
F
= 5 A; V
R
= 400 V; dI
F
/dt = 50 A/µs;
T
j
= 125 °C; see
Figure 6
I
F
= 5 A; V
R
= 400 V; dI
F
/dt = 500 A/µs;
T
j
= 100 °C; see
Figure 6
V
FR
forward recovery
voltage
I
F
= 5 A; dI
F
/dt = 100 A/µs; T
j
= 25 °C;
see
Figure 7
-
-
-
-
-
15
16
0.9
9.5
9
30
-
3
11
11
ns
ns
A
A
V
Min
-
-
-
-
-
Typ
1.4
1.5
1.15
9
0.9
Max
1.7
2
1.45
40
3
Unit
V
V
V
µA
mA
Static characteristics
10
I
F
(A)
8
003aag304
I
F
dl
F
dt
6
(1)
(2)
(3)
t
rr
time
25 %
4
2
I
R
0
1
2
V
F
(V)
3
I
RM
Q
r
100 %
0
003aac562
Fig 5.
Forward current as a function of forward
voltage
Fig 6.
Reverse recovery definitions; ramp recovery
BYC5D-500
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 6 July 2011
5 of 11
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