®
BYV52/PI
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
FEATURES
SUITED FOR SMPS
VERY LOW FORWARD LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
HIGH AVALANCHE ENERGY CAPABILITY
INSULATED VERSION TOP3I :
Insulating voltage = 2500 V DC
Capacitance = 12 pF
A1
K
A2
DESCRIPTION
Dual center tap rectifier suited for switchmode
power supply and high frequency DC to DC
converters.
Packaged in SOT93, or TOP3I this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
SOT93
(Plastic)
BYV52-200
isolated
TOP3I
(Plastic)
BYV52PI-200
ABSOLUTE MAXIMUM RATINGS
Symbol
I
F(RMS)
I
F(AV)
RMS forward current
Average forward current
SOT93
δ
= 0.5
TOP3I
Surge non repetitive forward current
Storage and junction temperature range
Tc=110°C
Tc=90°C
tp=10ms
sinusoidal
Parameter
Per diode
Per diode
Per diode
Per diode
Value
50
30
30
500
- 40 to + 150
- 40 to + 150
Unit
A
A
I
FSM
Tstg
Tj
A
°C
°
C
Symbol
V
RRM
Parameter
Repetitive peak reverse voltage
Value
200
Unit
V
October 1999
Ed : 2C
1/6
BYV52/PI
THERMAL RESISTANCE
Symbol
Rth (j-c)
Junction to case
Parameter
SOT93
Per diode
Total
TOP3I
Per diode
Total
Value
1.2
0.75
1.8
1.2
0.3
0.6
Unit
°
C/W
Rth (c)
Coupling
SOT93
TOP3I
°C/W
When the diodes 1 and 2 are used simultaneously :
Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
ELECTRICAL CHARACTERISTICS (Per diode)
STATIC CHARACTERISTICS
Symbol
I
R
*
T
j
= 25°C
T
j
= 100°C
V
F **
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
I
F
= 20 A
I
F
= 40 A
I
F
= 40 A
Test Conditions
V
R
= V
RRM
Min.
Typ.
Max.
25
2.5
0.85
1.00
1.15
Unit
µ
A
mA
V
Pulse test : * tp = 5 ms, duty cycle < 2 %
** tp = 380
µ
s, duty cycle < 2 %
To evaluate the conduction losses use the following equation :
P = 0.7 x I
F(AV)
+ 0.0075 x I
F2(RMS)
RECOVERY CHARACTERISTICS
Symbol
trr
T
j
= 25
°
C
Test Conditions
I
F
= 0.5A
I
R
= 1A
I
F
= 1A
V
R
= 30V
tfr
T
j
= 25°C
I
F
= 1A
V
FR
= 1.1 x V
F
I
F
= 1A
Irr = 0.25A
Min.
Typ.
Max.
35
Unit
ns
dI
F
/dt = -50A/µs
50
tr = 5 ns
10
ns
V
FP
2/6
T
j
= 25°C
tr = 5 ns
1.5
V
BYV52/PI
Fig.1 :
Average forward power dissipation versus
average forward current.
P F(av)(W)
=0.2
=0.1
=0.05
=0.5
=1
Fig.2 :
Peak current versus form factor.
40
35
30
25
20
15
10
5
T
IF(av)(A)
=tp/T
tp
0
0
5
10
15
20
25
30
35
500
450
400
350
300
250
200
150
100
50
0
0
IM(A)
T
P=20W
IM
=tp/T
tp
P=10W
P=30W
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
Fig.3 :
Forward voltage drop versus forward
current (maximum values).
VFM(V)
Fig.4 :
Relative variation of thermal impedance
junction to case versus pulse duration.
1.0
K
Zth(j-c) (tp. )
K =
Rth(j-c)
=0.5
=0.2
= 0 .1
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
IFM(A)
Tj= 125
o
C
0.5
T
0.2
Single pulse
0.1
1
10
100
300
0.1
1.0E-03
1.0E-02
tp(s)
1.0E-01
=tp/T
tp
1. 0E+00
Fig.5 :
Non repetitive surge peak forward current
versus overload duration.
(SOD93)
300
250
200
150
100
IM
Fig.6 :
Non repetitive surge peak forward current
versus overload duration.
(TOP3I)
250
200
150
IM(A)
IM(A)
Tc=25
o
C
100
Tc=50
o
C
t
=0.5
IM
Tc=25
o
C
Tc=50
o
C
t
=0.5
50
0
0.001
t(s)
0.01
0.1
Tc=110
o
C
50
0
0.001
Tc=90
o
C
t(s)
0.01
0.1
1
3/6
1
BYV52/PI
Fig.7 :
Average current
temperature.
(duty cycle : 0.5) (SOD93)
35
30
25
20
15
10
5
0
0
Tamb(
o
C)
=tp/T
tp
Rth(j-a)=15
o
C/W
=0.5
T
versus
ambient
Fig.8 :
Average current
temperature.
(duty cycle : 0.5) (TOP3I)
35
IF(av)(A)
versus
ambient
IF(av)(A)
Rth(j-a)=Rth(j-c)
30
25
20
15
10
5
=tp/T
tp
=0.5
T
Rth(j-a)=Rth(j-c)
Rth(j-a)=15
o
C/W
20
40
60
80
100
120
140
160
0
0
Tamb(
o
C)
20
40
60
80
100
120
140
160
Fig.9 :
Junction capacitance versus reverse
voltage applied (Typical values).
Fig.10 :
Recovery charges versus dI
F
/dt.
20 0
1 90
1 80
1 70
1 60
1 50
1 40
1 30
1 20
C(pF)
F=1Mhz Tj=25
o
C
11 0
1 00
1
VR(V)
10
1 00
2 00
1 00
90
90%CONFIDENCE
80
IF=IF(av)
70
Tj=100
O
C
60
50
40
Tj=25
O
C
30
20
10
dIF/dt(A/us)
0
1
10
QRR(nC)
100
Fig.11 :
Peak reverse current versus dIF/dt.
Fig.12 :
Dynamic parameters versus junction
temperature.
QRR;IRM[Tj]/QRR;IRM[Tj=125
o
C]
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
IRM(A)
90%CONFIDENCE
1.50
Tj=100
O
C
IF=IF(av)
1.25
1.00
IRM
0.75
QRR
0.50
Tj=25
O
C
0.25
100
0.00
0
25
dIF/dt(A/us)
20
10
Tj(
o
C)
50
75
100
125
150
4/6
BYV52/PI
PACKAGE MECHANICAL DATA
SOD93
DIMENSIONS
Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
4.70
4.90 0.185
0.193
1.17
1.37 0.046
0.054
2.50
0.098
1.27
0.050
0.50
0.78 0.020
0.031
1.10
1.30 0.043
0.051
1.75
0.069
10.80
11.10 0.425
0.437
14.70
15.20 0.578
0.598
12.20
0.480
16.20
0.638
18.0
0.709
3.95
4.15 0.156
0.163
31.00
1.220
4.00
4.10 0.157
0.161
REF.
A
C
D
D1
E
F
F3
G
H
L
L2
L3
L5
L6
O
Marking
: Type number
Cooling method : C
Weight : 3.79 g
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
5/6
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