Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Isolated mounting tab
BYV42F, BYV42EX series
SYMBOL
QUICK REFERENCE DATA
V
R
= 150 V/ 200 V
a1
1
k 2
a2
3
V
F
≤
0.9 V
I
O(AV)
= 20 A
I
RRM
= 0.2 A
t
rr
≤
28 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYV42F series is supplied in the SOT186 package.
The BYV42EX series is supplied in the SOT186A package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
anode 1 (a)
cathode (k)
anode 2 (a)
isolated
SOT186
case
SOT186A
case
1 2 3
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
PARAMETER
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average rectified output current
(both diodes conducting)
1
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
CONDITIONS
BYV42F / BYV42EX
T
hs
≤
125˚C
-
-
-
-
-
-
-
-
-
-40
-
MIN.
-150
150
150
150
20
30
150
160
0.2
0.2
150
150
MAX.
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
˚C
˚C
I
RRM
I
RSM
T
stg
T
j
square wave
δ
= 0.5; T
hs
≤
78 ˚C
t = 25
µs; δ
= 0.5;
T
hs
≤
78 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RWM(max)
Repetitive peak reverse current t
p
= 2
µs; δ
= 0.001
per diode
Non-repetitive peak reverse
t
p
= 100
µs
current per diode
Storage temperature
Operating junction temperature
1
Neglecting switching and reverse current losses.
October 1998
1
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge
capacitor voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
BYV42F, BYV42EX series
MIN.
-
MAX.
8
UNIT
kV
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
R.M.S. isolation voltage from all
three terminals to external
heatsink
Repetitive peak voltage from all
three terminals to external
heatsink
Capacitance from pin 2 to
external heatsink
CONDITIONS
SOT186A package; f = 50-60 Hz;
sinusoidal waveform; R.H.
≤
65%;
clean and dustfree
SOT186 package; R.H.
≤
65%;
clean and dustfree
f = 1 MHz
MIN.
-
TYP.
MAX.
2500
UNIT
V
V
isol
-
1500
V
C
isol
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
R
th j-hs
PARAMETER
Thermal resistance junction to
heatsink
CONDITIONS
both diodes conducting
with heatsink compound
without heatsink compound
per diode
with heatsink compound
without heatsink compound
in free air
MIN.
-
-
-
-
-
TYP.
-
-
-
-
55
MAX.
4.0
8.0
5.0
9.0
-
UNIT
K/W
K/W
K/W
K/W
K/W
R
th j-a
Thermal resistance junction to
ambient
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
Q
s
t
rr1
t
rr2
I
rrm
V
fr
PARAMETER
Forward voltage
Reverse current
Reverse recovery charge
Reverse recovery time
Reverse recovery time
Peak reverse recovery current
Forward recovery voltage
CONDITIONS
I
F
= 15 A; T
j
= 150˚C
I
F
= 15 A
I
F
= 30 A
V
R
= V
RWM
; T
j
= 100 ˚C
V
R
= V
RWM
I
F
= 2 A; V
R
≥
30 V; -dI
F
/dt = 20 A/µs
I
F
= 1 A; V
R
≥
30 V;
-dI
F
/dt = 100 A/µs
I
F
= 0.5 A to I
R
= 1 A; I
rec
= 0.25 A
I
F
= 10 A; V
R
≥
30 V;
-dI
F
/dt = 50 A/µs; T
j
= 100˚C
I
F
= 1 A; dI
F
/dt = 10 A/µs
MIN.
-
-
-
-
-
-
-
-
-
-
TYP.
0.83
0.95
1.00
0.5
10
6
20
13
2
1
MAX.
0.90
1.05
1.20
1
100
15
28
22
2.4
-
UNIT
V
V
V
mA
µA
nC
ns
ns
A
V
October 1998
2
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV42F, BYV42EX series
I
dI
F
dt
F
0.5A
IF
t
rr
time
0A
I rec = 0.25A
IR
trr2
Q
I
R
I
s
10%
100%
rrm
I = 1A
R
Fig.1. Definition of t
rr1
, Q
s
and I
rrm
Fig.4. Definition of t
rr2
I
F
25
PF / W
Vo = 0.7050 V
Rs = 0.0130 Ohms
BYV72
Ths(max) / C
D = 1.0
25
20
0.5
15
50
time
0.1
0.2
75
VF
V
VF
time
fr
10
I
t
p
D=
t
T
p
100
5
T
t
125
0
0
5
10
15
IF(AV) / A
20
150
25
Fig.2. Definition of V
fr
Fig.5. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
PF / W
Vo = 0.705 V
Rs = 0.013 Ohms
R
20
BYV72
Ths(max) / C
50
a = 1.57
15
1.9
2.2
2.8
10
4
100
75
D.U.T.
Voltage Pulse Source
Current
shunt
5
125
to ’scope
0
0
5
IF(AV) / A
10
150
15
Fig.3. Circuit schematic for t
rr2
Fig.6. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
October 1998
3
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV42F, BYV42EX series
trr / ns
1000
100 Qs / nC
IF=20A
10A
5A
2A
1A
10
IF=20A
100
IF=1A
10
1
1
10
dIF/dt (A/us)
100
1.0
1.0
10
-dIF/dt (A/us)
100
Fig.7. Maximum t
rr
at T
j
= 25 ˚C; per diode
Fig.10. Maximum Q
s
at T
j
= 25 ˚C; per diode
10
Irrm / A
10
Transient thermal impedance, Zth j-hs (K/W)
IF=20A
1
1
IF=1A
0.1
0.1
0.01
P
D
t
p
D=
t
p
T
t
0.01
1
10
-dIF/dt (A/us)
100
0.001
1us
T
10us
100us 1ms
10ms 100ms
1s
10s
pulse width, tp (s)
BYV42F/EX
Fig.8. Maximum I
rrm
at T
j
= 25 ˚C; per diode
Fig.11. Transient thermal impedance; per diode;
Z
th j-hs
= f(t
p
).
50
IF / A
Tj = 150 C
40
Tj = 25 C
30
20
typ
10
max
0
0
0.5
VF / V
1.0
1.5
Fig.9. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
October 1998
4
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
BYV42F, BYV42EX series
10.2
max
5.7
max
3.2
3.0
0.9
0.5
4.4
max
2.9 max
4.4
4.0
7.9
7.5
17
max
seating
plane
3.5 max
not tinned
4.4
13.5
min
1
0.4
M
2
3
0.9
0.7
2.54
5.08
top view
1.3
0.55 max
Fig.12. SOT186; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1998
5
Rev 1.300
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