SMC30J
3000 W Transil™
Features
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Peak pulse power:
– 3000 W (10/1000
μs)
Stand off voltage range: from 5 V to 33 V
Unidirectional and bidirectional types
Low leakage current: 0.2
μA
Operating T
j max
: 150 °C
High power capability at T
j max
:
– 2200 W (10/1000 µs)
JEDEC registered package outline
K
A
Unidirectional
Bidirectional
SMC
(JEDEC DO-214AB)
Complies with the following standards
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IEC 61000-4-2 level 4
– 15 kV (air discharge)
– 8 kV (contact discharge)
MIL STD 883G, method 3015-7 Class 3B
– 25 kV HBM (human body model)
Resin meets UL 94, V0
MIL-STD-750, method 2026 solderability
EIA STD RS-481 and IEC 60286-3 packing
IPC 7531 footprint
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Description
The SMC30J Transil series has been designed to
protect sensitive equipment against surges below
3000 W (10/1000 µs) and against electro-static
discharges according to IEC 61000-4-2, and MIL
STD 883, method 3015.
The Planar technology makes it compatible with
high-end equipment and SMPS where low
leakage current and high junction temperature are
required to provide reliability and stability over
time. SMC30J are packaged in SMC (SMC
footprint in accordance with IPC 7531 standard).
TM:
Transil is a trademark of STMicroelectroniocs
July 2011
Doc ID 022064 Rev 1
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www.st.com
10
Characteristics
SMC30J
1
Table 1.
Symbol
P
PP
T
stg
T
j
T
L
Characteristics
Absolute maximum ratings (T
amb
= 25 °C)
Parameter
Peak pulse power dissipation
(1)
Storage temperature range
Operating junction temperature range
Maximum lead temperature for soldering during 10 s.
T
j
initial = T
amb
Value
3000
-65 to +150
-55 to +150
260
Unit
W
°C
°C
°C
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Table 2.
Symbol
R
th(j-l)
R
th(j-a)
Thermal resistances
Parameter
Junction to leads
Junction to ambient on printed circuit on recommended pad layout
Value
15
90
Unit
° C/W
° C/W
Figure 1.
Electrical characteristics - definitions
I
I
I
PP
Symbol
V
RM
V
BR
V
CL
I
RM
I
PP
α
T
V
F
R
D
Parameter
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current @ V
RM
Peak pulse current
Voltage temperature coefficient
Forward voltage drop
Dynamic resistance
Unidirectional
I
F
V
CL
V
BR
V
RM
I
RM
I
R
V
F
V
V
CL
V
BR
V
RM
I
R
I
RM
I
RM
I
R
V
V
RM
V
BR
V
CL
I
PP
I
PP
Bidirectional
Figure 2.
Pulse definition for electrical characteristics
Repetitive pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
tr
tp
2/10
Doc ID 022064 Rev 1
SMC30J
Table 3.
Electrical characteristics - parameter values (T
amb
= 25 °C)
I
RM
max@V
RM
V
BR
@I
R
min
µA
SMC30J5.0A/CA
SMC30J6.0A/CA
SMC30J6.5A/CA
SMC30J8.5A/CA
SMC30J10A/CA
SMC30J12A/CA
SMC30J13A/CA
SMC30J15A/CA
SMC30J16A/CA
SMC30J18A/CA
SMC30J20A/CA
SMC30J22A/CA
SMC30J24A/CA
SMC30J26A/CA
SMC30J28A/CA
SMC30J30A/CA
SMC30J33A/CA
1. Pulse test : t
p
< 50 ms
(1)
Characteristics
V
CL
@I
PP
10/1000 µs
max
mA
V
9.2
10.3
11.2
14.4
17
19.9
21.5
24.4
26
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
A
(4)
327
291
268
208
176
151
140
123
115
103
93
85
77
71
66
62
56
R
D (2)
10/1000 µs
αT
(3)
max
Order code
typ
V
5
6
6.5
8.5
10
12
13
15
16
18
20
22
24
26
28
30
33
V
6.4
6.7
7.2
9.4
11.1
13.3
14.4
16.7
17.8
20
22.2
24.4
26.7
28.9
31.1
33.3
36.7
6.74
7.05
7.58
9.9
11.7
14
15.2
17.6
18.7
21.1
23.4
25.7
28.1
30.4
32.7
35.1
38.6
Ω
0.008
0.011
0.014
0.022
0.030
0.039
0.045
0.055
0.063
0.079
0.097
0.115
0.140
0.165
0.192
0.215
0.261
10-4/ °C
5.7
5.9
6.1
7.3
7.8
8.3
8.4
8.8
8.8
9.2
9.4
9.6
9.6
9.7
9.8
9.9
10.0
500
500
250
10
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
2. To calculate maximum clamping voltage at other surge level,use the following formula: V
CLmax
= V
CL
- R
D
x (I
PP
- I
PPappli
)
where I
PPappli
is the surge current in the application
3. To calculate V
BR
or V
CL
versus junction temperature, use the following formulas:
V
BR
@ T
J
= V
BR
@ 25°C x (1 +
αT
x (T
J
– 25))
V
CL
@ T
J
= V
CL
@ 25°C x (1 +
αT
x (T
J
– 25))
4. Surge capability given for both directions for unidirectional and bidirectional types.
Doc ID 022064 Rev 1
3/10
Characteristics
SMC30J
Figure 3.
Peak pulse power dissipation
versus initial junction temperature
(typical value)
Figure 4.
Peak pulse power versus
exponential pulse duration
(T
j
initial = 25 °C)
T
j
initial = 25 °C
3500
3000
2500
2000
P
PP
(W)
10/1000 µs
1000.0
P
PP
(kW)
100.0
10.0
1500
1000
500
0
0
25
50
75
100
125
150
1.0
T
j
(°C)
175
0.1
1.E-03
t
P
(
ms
)
1.E-02
1.E-01
1.E+00
1.E+01
Figure 5.
Clamping voltage versus peak pulse Figure 6.
current (exponential waveform,
maximum values)
100.0
Junction capacitance versus
reverse applied voltage for
unidirectional types (typical values)
F = 1 MHz
V
OSC
= 30 mV
RMS
T
j
= 25 °C
1000.0
I
PP
(A)
T
j
initial = 25 °C
10/1000 µs
C(nF)
100.0
10.0
SMC30J5.0A
10.0
SMC30J15A
SMC30J5.0A/CA
SMC30J33A/CA
SMC30J15A/CA
1.0
SMC30J33A
1.0
0.1
1
10
V
CL
(V)
100
0.1
1
10
V
R
(V)
100
Figure 7.
Junction capacitance versus
reverse applied voltage for
bidirectional types (typical values)
F = 1 MHz
V
OSC
= 30 mV
RMS
T
j
= 25 °C
Figure 8.
Peak forward voltage drop versus
peak forward current (typical
values)
100.0
C(nF)
100.0
I
FM
(A)
10.0
SMC30J5.0CA
10.0
T
j
= 25 °C
T
j
= 150 °C
SMC30J15CA
1.0
SMC30J33CA
1.0
0.1
1
10
V
R
(V)
100
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
FM
(V)
1.6
1.8
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Doc ID 022064 Rev 1
SMC30J
Characteristics
Figure 9.
Relative variation of thermal
impedance, junction to ambient,
versus pulse duration
Figure 10. Thermal resistance junction to
ambient versus copper surface
under each lead
100
90
80
70
60
1.00
Z
th(j-a)
/R
th(j-a)
Recommended pad layout
R
th(j-a)
(°C/W)
epoxy printed board, FR4 copper thickness = 35 µm
0.10
Single pulse
50
40
30
epoxy printed board, FR4 copper thickness = 35 µm
20
10
0
0.01
1.E-03
t
p
(s)
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
S
Cu
(cm )
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
2
Figure 11. Leakage current versus junction temperature (typical values)
1.E+05
I
R
(nA)
V
R
= V
RM
1.E+04
V
RM
< 10 V
1.E+03
1.E+02
1.E+01
V
RM
≥
10 V
1.E+00
25
50
75
100
125
T
j
(°C)
150
Doc ID 022064 Rev 1
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