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BYV34

产品描述10 A, 500 V, SILICON, RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小36KB,共5页
制造商Philips Semiconductors (NXP Semiconductors N.V.)
官网地址https://www.nxp.com/
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BYV34概述

10 A, 500 V, SILICON, RECTIFIER DIODE

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Philips Semiconductors
Product specification
Dual rectifier diodes
ultrafast
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Low thermal resistance
BYV34 series
SYMBOL
QUICK REFERENCE DATA
V
R
= 300 V/ 400 V/ 500 V
a1
1
k 2
a2
3
V
F
1.05 V
I
O(AV)
= 20 A
t
rr
60 ns
SOT78 (TO220AB)
GENERAL DESCRIPTION
Dual, common cathode, ultra-fast,
epitaxial rectifier diodes intended
for use as output rectifiers in high
frequency switched mode power
supplies.
The BYV34 series is supplied in the
conventional
leaded
SOT78
(TO220AB) package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
anode 1
cathode
anode 2
cathode
tab
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
PARAMETER
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average rectified output current
(both diodes conducting)
1
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode.
Storage temperature
Operating junction temperature
CONDITIONS
BYV34
T
mb
138˚C
square wave;
δ
= 0.5;
T
mb
115 ˚C
t = 25
µs; δ
= 0.5;
T
mb
115 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RRM(max)
-
-
-
-
-
-
-
-40
-
MIN.
-300
300
300
300
MAX.
-400
400
400
400
20
20
120
132
150
150
-500
500
500
500
UNIT
V
V
V
A
A
A
A
˚C
˚C
T
stg
T
j
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
per diode
both diodes conducting
in free air.
MIN.
-
-
-
TYP.
-
-
60
MAX.
2.4
1.6
-
UNIT
K/W
K/W
K/W
1
Neglecting switching and reverse current losses
October 1998
1
Rev 1.400

BYV34相似产品对比

BYV34 BYV34-500
描述 10 A, 500 V, SILICON, RECTIFIER DIODE 10 A, 500 V, SILICON, RECTIFIER DIODE

 
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