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SMDJ100.0CA-HRA

产品描述tvs diodes - transient voltage suppressors 100v 3000w 5% tol high rel Bi
产品类别半导体    分立半导体   
文件大小1MB,共6页
制造商Littelfuse
官网地址http://www.littelfuse.com
标准
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SMDJ100.0CA-HRA概述

tvs diodes - transient voltage suppressors 100v 3000w 5% tol high rel Bi

SMDJ100.0CA-HRA规格参数

参数名称属性值
ManufactureLittelfuse
产品种类
Product Category
TVS Diodes - Transient Voltage Suppressors
RoHSYes
PolarityBidirectional
Operating Voltage100 V
Breakdown Voltage123 V
Clamping Voltage162 V
Peak Surge Curre18.5 A
封装 / 箱体
Package / Case
DO-214AB-2
最小工作温度
Minimum Operating Temperature
- 55 C
最大工作温度
Maximum Operating Temperature
+ 150 C
安装风格
Mounting Style
SMD/SMT
系列
Packaging
Reel
Peak Pulse Power Dissipati3 kW
工厂包装数量
Factory Pack Quantity
500
端接类型
Termination Style
SMD/SMT

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Transient Voltage Suppression Diodes
Surface Mount – 3000W > SMDJ-HRA Series
SMDJ-HRA Series
Uni-directional
Description
RoHS
Pb
e3
TVS Diode Arrays
(SPA
Family of Products)
Bi-directional
The SMDJ-HRA High Reliability series is designed
specifically to protect sensitive electronic equipment from
voltage transients induced by lightning and other transient
voltage events. These are available with a variety of up-
screening options for enhanced reliability.
Agency Approvals
AGENCY
AGENCY FILE NUMBER
E230531
Features
• High reliability devices
with fabrication and
assembly lots traceability
• Enhanced reliability
screening options are
available in reference to
MIL-PRF-19500. Refer to
screen process table for
more detail on screening
options
• SMT for minimal board
footprint
• Low profile package
• Built-in strain relief
V
BR
@T
J
= V
BR
@25°C x (1+αT x
(T
J
- 25))
(αT:Temperature Coefficient)
Maximum Ratings and Thermal Characteristics
(T
A
=25
O
C unless otherwise noted)
Parameter
Peak Pulse Power Dissipation at
T
A
=25ºC by
10/1000µs
waveform
(Fig.1)(Note 1), (Note 2)
Power Dissipation on infinite heat
sink at T
L
=50
O
C
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave (Note 3)
Maximum Instantaneous Forward
Voltage at 100A for Unidirectional
only
Operating Junction and Storage
Temperature Range
Typical Thermal Resistance Junction
to Lead
Typical Thermal Resistance Junction
to Ambient
Symbol
P
PPM
P
M(AV)
I
FSM
V
F
T
J
, T
STG
R
uJL
R
uJA
Value
3000
6.5
300
3.5
-65 to 150
15
75
Unit
W
W
A
V
°C
°C/W
°C/W
Notes:
1. Non-repetitive current pulse , per Fig. 3 and derated above T
A
= 25
O
C per Fig. 2.
2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional
components only, duty cycle=4 per minute maximum.
• Glass passivated chip
junction
• 3000W peak pulse power
capability at 10/1000μs
waveform, repetition rate
(duty cycles):0.01%
• Fast response time:
typically less than 1.0ps
from 0V to BV min
• Excellent clamping
capability
• Low incremental surge
resistance
• Typical I
R
≤ 2µA for V
R
>
10V
• High Temperature
soldering guaranteed:
260°C/40 seconds at
terminals
• UL Recognized compound
meeting flammability
rating V-0
• Meet MSL level1, per
J-STD-020, LF maximun
peak of 260
°
C
• Matte tin lead–free plated
• Halogen free and RoHS
compliant
2nd level interconnect is
Pb-free per IPC/JEDEC
J-STD-609A.01
Functional Diagram
Applications
SMDJ-HRA components are ideal for the high reliability
protection of I/O Interfaces, V
CC
bus and other vulnerable
circuits used in Telecom, Computer, Industrial and
Consumer electronic applications.
Bi-directional
Cathode
Uni-directional
Anode
1
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 03/28/18
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