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BYV32-50

产品描述10 A, 50 V, SILICON, RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小78KB,共2页
制造商GE Sensing ( Amphenol Advanced Sensors )
官网地址http://www.vishay.com/
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BYV32-50概述

10 A, 50 V, SILICON, RECTIFIER DIODE

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BYV32-50 THRU BYV32-200
FAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage -
50 to 150 Volts
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.185 (4.70)
0.175 (4.44)
DIA.
0.148 (3.74)
0.055 (1.39)
0.045 (1.14)
Forward Current -
18.0 Amperes
FEATURES
Dual rectifier construction, positive centertap
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Glass passivated chip junctions
Low power loss
Low forward voltage,
high current capability
High surge capability
Superfast recovery time for high efficiency
High temperature soldering guaranteed:
250°C, 0.16" (4.06mm) from case for 10 seconds
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.560 (14.22)
0.530 (13.46)
0.410 (10.41)
0.390 (9.91)
PIN
2
0.635 (16.13)
0.625 (15.87)
1
0.160 (4.06)
0.140 (3.56)
0.560 (14.22)
0.530 (13.46)
3
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
MECHANICAL DATA
0.105 (2.67)
0.095 (2.41)
0.037 (0.94)
0.027 (0.68)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.35)
PIN 1
PIN 3
PIN 2
CASE
Dimensions in inches and (millimeters)
Case:
JEDEC TO-220AB molded plastic body over
passivated chips
Terminals:
Plated leads solderable per MIL-STD-750,
Method 2026
Polarity:
As marked
Mounting Position:
Any
Weight:
0.08 ounce, 2.24 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
BYV32-50
BYV32-100
BYV32-150
BYV32-200
UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
C
=120°C
Peak forward surge current
10ms single half sine-wave superimposed at
at T
J
=150°C
Maximum instantaneous forward voltage per leg at:
I
F
=20A
I
F
=5.0A, T
J
=100°C
Maximum DC reverse current
at rated DC blocking voltage
T
C
=25°C
T
C
=100°C
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
18.0
150
105
150
200
140
200
Volts
Volts
Volts
Amps
I
FSM
150.0
Amps
V
F
1.15
0.85
10.0
600.0
25.0
45.0
20.0
3.0
-65 to +150
Volts
µA
ns
pF
°C/W
°C
I
R
t
rr
C
J
R
ΘJA
R
ΘJC
T
J
, T
STG
Maximum reverse recovery time per leg
(NOTE 1)
Typical junction capacitance per leg
(NOTE 2)
Maximum thermal resistance per leg
(NOTE 3)
Operating and storage temperature range
NOTES:
(1) Reverse recovery test conditions: I
F
=1A V
R
=30V, di/dt=100A/µs, Irr=10% I
RM
(2) Measured at 1.0 MH
Z
and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to case per leg mounted on heatsink
4/98

BYV32-50相似产品对比

BYV32-50 BYV32-100 BYV32-150 BYV32-200
描述 10 A, 50 V, SILICON, RECTIFIER DIODE 18 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB 18 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB 18 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB

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