FQD6N60CTM_WS,FQD6N60CTM_WS pdf中文资料,FQD6N60CTM_WS引脚图,FQD6N60CTM

FQD6N60CTM_WS: 产品描述mosfet 600v N-Ch mosfet qfet; 产品类别半导体分立半导体; 文件大小676KB，共8页; 制造商Fairchild; 官网地址http://www.fairchildsemi.com/; 标准

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FQD6N60CTM_WS在线购买

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mosfet 600v N-Ch mosfet qfet

参数名称	属性值
Manufacture	Fairchild Semiconduc
产品种类 Product Category	MOSFET
RoHS	Yes
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Breakdown Voltage	30 V
Id - Continuous Drain Curre	4 A
Rds On - Drain-Source Resistance	2 Ohms
Configurati	Single
最大工作温度 Maximum Operating Temperature	+ 150 C
Pd - Power Dissipati	80 W
安装风格 Mounting Style	SMD/SMT
封装 / 箱体 Package / Case	DPAK-2
系列 Packaging	Reel
Channel Mode	Enhanceme
Fall Time	45 ns
最小工作温度 Minimum Operating Temperature	- 55 C
Rise Time	45 ns
工厂包装数量 Factory Pack Quantity	2500
Typical Turn-Off Delay Time	45 ns
Unit Weigh	260.370 mg

	FQD6N60CTM_WS
描述	mosfet 600v N-Ch mosfet qfet
Manufacture	Fairchild Semiconduc
产品种类 Product Category	MOSFET
RoHS	Yes
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	600 V
Vgs - Gate-Source Breakdown Voltage	30 V
Id - Continuous Drain Curre	4 A
Rds On - Drain-Source Resistance	2 Ohms
Configurati	Single
最大工作温度 Maximum Operating Temperature	+ 150 C
Pd - Power Dissipati	80 W
安装风格 Mounting Style	SMD/SMT
封装 / 箱体 Package / Case	DPAK-2
系列 Packaging	Reel
Channel Mode	Enhanceme
Fall Time	45 ns
最小工作温度 Minimum Operating Temperature	- 55 C
Rise Time	45 ns
工厂包装数量 Factory Pack Quantity	2500
Typical Turn-Off Delay Time	45 ns
Unit Weigh	260.370 mg

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