Freescale Semiconductor
Technical Data
Document Number: MRF8P29300H
Rev. 0, 2/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF Power transistors designed for applications operating at frequencies
between 2700 and 2900 MHz. These devices are suitable for use in pulsed
applications.
•
Typical Pulsed Performance: V
DD
= 30 Volts, I
DQ
= 100 mA
Signal Type
Pulsed (100
μsec,
10% Duty Cycle)
P
out
(W)
320 Peak
f
(MHz)
2900
G
ps
(dB)
13.3
η
D
(%)
50.5
IRL
(dB)
--17
MRF8P29300HR6
MRF8P29300HSR6
2700-
-2900 MHz, 320 W, 30 V
LATERAL N-
-CHANNEL
BROADBAND
RF POWER MOSFETs
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2900 MHz, 320 Watts Peak
Power, 300
μsec,
10% Duty Cycle (3 dB Input Overdrive from Rated P
out
)
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Designed for Push--Pull Operation
•
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
RoHS Compliant
•
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p. 15.
CASE 375D-
-05, STYLE 1
NI-
-1230
MRF8P29300HR6
CASE 375E-
-04, STYLE 1
NI-
-1230S
MRF8P29300HSR6
PARTS ARE PUSH-
-PULL
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
--0.5, +65
--6.0, +10
-- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
RF
inA
/V
GSA
3
1 RF
outA
/V
DSA
RF
inB
/V
GSB
4
2 RF
outB
/V
DSB
(Top View)
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 61°C, 320 W Pulsed, 300
μsec
Pulse Width, 10% Duty Cycle, 100 mA, 2900 MHz
Case Temperature 69°C, 320 W Pulsed, 500
μsec
Pulse Width, 20% Duty Cycle, 100 mA, 2900 MHz
Symbol
Z
θJC
Value
(2,3)
0.06
0.10
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2011. All rights reserved.
MRF8P29300HR6 MRF8P29300HSR6
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(1)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 30 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(1)
(V
DS
= 10 Vdc, I
D
= 345
μAdc)
Gate Quiescent Voltage
(2)
(V
DD
= 30 Vdc, I
D
= 100 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(1)
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 30 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 30 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 30 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
2.53
470
264
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1.0
1.5
0.1
1.9
2.3
0.18
2.5
3.0
0.3
Vdc
Vdc
Vdc
I
GSS
I
DSS
I
DSS
—
—
—
—
—
—
1
1
10
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(2)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 30 Vdc, I
DQ
= 100 mA, P
out
= 320 W Peak (32 W Avg.),
f = 2900 MHz, 100
μsec
Pulse Width, 10% Duty Cycle
Power Gain
Drain Efficiency
Input Return Loss
G
ps
η
D
IRL
12.0
47.0
—
13.3
50.5
--17
15.0
—
--9
dB
%
dB
Typical Pulsed RF Performance
(In Freescale 2″x3″ Compact Test Fixture, 50 ohm system) V
DD
= 30 Vdc, I
DQ
= 100 mA, P
out
= 320 W
Peak (32 W Avg.), 300
μsec
Pulse Width, 10% Duty Cycle
Frequency
2700 MHz
2800 MHz
2900 MHz
1. Each side of device measured separately.
2. Measurement made with device in push--pull configuration.
G
ps
(dB)
13.9
14.0
13.0
η
D
(%)
49.3
49.8
49.6
IRL
(dB)
--11
--18
--15
MRF8P29300HR6 MRF8P29300HSR6
2
RF Device Data
Freescale Semiconductor
V
BIAS
C20
C18
C14
C10 C3
C30
Z22
R1
Z20 Z17
Z14
C1
RF
INPUT Z1
Z13
Z2
Z3
Z4
Z5
Z6
Z7
C2
Z8
Z9
Z15 Z16
Z18
Z19
Z45
Z46
C31
Z11
Z12
R2
Z23
DUT
Z21 Z10
V
BIAS
C19
C15
C11
C7
C4
C29
+
Z47
Z28
C26
C6
C33
C9
C13 C17
C27
+
C34
+
C35
V
SUPPLY
Z29 Z30 Z31 Z32 Z33 Z34 Z35
C23
Z42
RF
OUTPUT
Z43 Z44
Z41
Z24
Z25 Z26 Z27 Z36 Z37 Z38 Z39
C24
Z48
V
SUPPLY
Z40
+
C25
C5
C32
C8
C12 C16
C21
+
C22
+
C28
Z1*
Z2
Z3
Z4
Z5
Z6
Z7*
Z8, Z15
Z9, Z16
Z10, Z17
0.865″ x 0.065″ Microstrip
0.100″ x 0.110″ Microstrip
0.075″ x 0.065″ Microstrip
0.146″ X 0.111″ Microstrip
0.325″ x 0.204″ Microstrip
0.224″ x 0.111″ Microstrip
0.121″ x 0.065″ Microstrip
0.030″ x 0.065″ Microstrip
0.284″ x 0.165″ Microstrip
0.105″ x 0.620″ Microstrip
Z11, Z18
Z12, Z19
Z13*
Z14
Z20, Z21, Z45, Z46
Z22, Z23*
Z24, Z28
Z25, Z29
Z26, Z30
Z27, Z31
Z32, Z36
0.135″ x 0.620″ Microstrip
0.120″ x 0.620″ Microstrip
0.957″ x 0.065″ Microstrip
0.495″ x 0.065″ Microstrip
0.055″ x 0.100″ Microstrip
0.554″ x 0.060″ Microstrip
0.202″ x 0.610″ Microstrip
0.166″ x 0.560″ Microstrip
0.200″ x 0.622″ Microstrip
0.088″ x 0.331″ Microstrip
0.247″ x 0.098″ Microstrip
Z33, Z37
Z34, Z38
Z35, Z39
Z40
Z41*
Z42*
Z43
Z44*
Z47, Z48*
0.112″ x 0.232″ Microstrip
0.158″ x 0.152″ Microstrip
0.058″ x 0.065″ Microstrip
0.505″ x 0.065″ Microstrip
0.917″ x 0.065″ Microstrip
0.092″ x 0.065″ Microstrip
0.695″ x 0.111″ Microstrip
0.479″ x 0.065″ Microstrip
0.409″ x 0.100″ Microstrip
* Line length includes microstrip bends
Figure 2. MRF8P29300HR6(HSR6) Test Circuit Schematic
MRF8P29300HR6 MRF8P29300HSR6
RF Device Data
Freescale Semiconductor
3
MRF8P29300H/HS
Rev. 5
C27
C34
C17
C18
C20
C14
C10
C3
C30
R1
C26 C6 C33 C9
C13
C35
C1
C31
C2
C19
C15
C11
R2
C4 C29
C23
CUT OUT AREA
C24
C25 C5 C32 C8
C12
C21
C7
C28
C16
C22
Figure 3. MRF8P29300HR6(HSR6) Test Circuit Component Layout
Table 5. MRF8P29300HR6(HSR6) Test Circuit Component Designations and Values
Part
C1, C2
C3, C4
C5, C6, C25, C26, C29, C30
C7, C8, C9, C10
C11, C12, C13, C14
C15, C16, C17, C18
C19, C20
C21, C22, C27, C28, C34, C35
C23, C24
C31
C32, C33
R1, R2
PCB
Description
3.3 pF Chip Capacitors
18 pF Chip Capacitors
5.1 pF Chip Capacitors
100 pF Chip Capacitors
1000 pF Chip Capacitors
1
μF
Chip Capacitors
22
μF
Chip Capacitors
470
μF,
63 V Electrolytic Capacitors
5.1 pF Chip Capacitors
0.5 pF Chip Capacitor
1
μF
Chip Capacitors
5
Ω
Chip Resistors
0.030″,
ε
r
= 3.5
Part Number
ATC600F3R3BT250XT
ATC600F180JT250XT
ATC100B5R1BT250XT
ATC100B101JT500XT
ATC100B102JT50XT
GRM32ER72A105KA01L
C5750KF1H226ZT
MCGPR63V477M16X32--RH
ATC600F5R1CT500XT
ATC100B0R5BT500XT
C3225JB2A105KT
CRCW08055R00JNEA
RF35A2
ATC
ATC
ATC
ATC
ATC
Murata
TDK
Multicomp
ATC
ATC
TDK
Vishay
Taconic
Manufacturer
MRF8P29300HR6 MRF8P29300HSR6
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
1000
C
oss
C
iss
C, CAPACITANCE (pF)
P
out
, OUTPUT POWER (dBm)
100
Measured with
±30
mV(rms)ac @ 1 MHz
V
GS
= 0 Vdc
60
59
58
57
56
55
54
53
52
51
50
35
36
37
38
P3dB = 55.16 dBm (328 W)
P2dB = 54.82 dBm (303 W)
P1dB = 54.19 dBm (263 W)
Ideal
Actual
10
C
rss
1
0
4
8
12
16
20
24
28
32
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
V
DD
= 30 Vdc, I
DQ
= 100 mA, f = 2900 MHz
Pulse Width = 300
μsec,
Duty Cycle = 10%
39
40
41
42
43
44
45
Note:
Each side of device measured separately.
Figure 4. Capacitance versus Drain-
-Source Voltage
15
14.5
G
ps
, POWER GAIN (dB)
14
13.5
13
12.5
12
11.5
30
η
D
V
DD
= 30 Vdc
I
DQ
= 100 mA
f = 2900 MHz
Pulse Width = 300
μsec
Duty Cycle = 10%
100
P
out
, OUTPUT POWER (WATTS) PULSED
G
ps
55
50
G
ps
, POWER GAIN (dB)
45
40
35
30
25
20
500
η
D,
DRAIN EFFICIENCY (%)
16
15
14
13
P
in
, INPUT POWER (dBm) PULSED
Figure 5. Pulsed Output Power versus
Input Power
I
DQ
= 100 mA, f = 2900 MHz
Pulse Width = 300
μsec
Duty Cycle = 10%
32 V
12
28 V
11
10
26 V
V
DD
= 24 V
0
100
200
300
400
30 V
P
out
, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
16
1000 mA
G
ps
, POWER GAIN (dB)
G
ps
, POWER GAIN (dB)
15
500 mA
14
200 mA
13
I
DQ
= 100 mA
12
0
100
200
300
400
P
out
, OUTPUT POWER (WATTS) PULSED
V
DD
= 30 Vdc
f = 2900 MHz
Pulse Width = 300
μsec
Duty Cycle = 10%
17
16
15
14
13
12
11
10
9
20
η
D
85_C
Figure 7. Pulsed Power Gain versus
Output Power
55
25_C 50
85_C
45
40
25_C
35
30
25
V
DD
= 30 Vdc, I
DQ
= 100 mA, f = 2900 MHz
Pulse Width = 300
μsec,
Duty Cycle = 10%
100
P
out
, OUTPUT POWER (WATTS) PULSED
20
--30_C
G
ps
T
C
= --30_C
15
500
Figure 8. Pulsed Power Gain versus
Output Power
Figure 9. Pulsed Power Gain and Drain Efficiency
versus Output Power
MRF8P29300HR6 MRF8P29300HSR6
RF Device Data
Freescale Semiconductor
5
η
D,
DRAIN EFFICIENCY (%)
模拟与混合信号
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