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MRF6VP3091NBR5: 产品描述transistors RF mosfet vhv6 50v 4.5W; 产品类别半导体分立半导体; 文件大小1MB，共20页; 制造商FREESCALE (NXP); 标准

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MRF6VP3091NBR5概述

transistors RF mosfet vhv6 50v 4.5W

MRF6VP3091NBR5规格参数

参数名称	属性值
Manufacture	Freescale Semiconduc
产品种类 Product Category	Transistors RF MOSFET
RoHS	Yes
Configurati	Single
频率 Frequency	470 MHz to 860 Mhz
Gai	24 dB
Output Powe	90 W
Vds - Drain-Source Breakdown Voltage	115 V
最大工作温度 Maximum Operating Temperature	+ 125 C
安装风格 Mounting Style	SMD/SMT
封装 / 箱体 Package / Case	TO-272
系列 Packaging	Reel
工厂包装数量 Factory Pack Quantity	50
Vgs th - Gate-Source Threshold Voltage	2.4 V
Unit Weigh	2 g

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Freescale Semiconductor

Technical Data

Document Number: MRF6VP3091N

Rev. 1, 12/2011

RF Power LDMOS Transistors

Enhancement--Mode Lateral MOSFETs

Designed for commercial and industrial broadband applications with

frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast

applications.

•

Typical Performance (Broadband Reference Circuit): V

= 50 Volts,

= 450 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability

on CCDF.

out

(W)

18 Avg.

(MHz)

470

650

860

(dB)

21.8

21.6

21.7

(%)

31.0

26.4

27.6

Output

Signal PAR

(dB)

7.9

8.4

7.1

IMD

Shoulder

(dBc)

--27.8

--37.6

--30.4

MRF6VP3091NR1

MRF6VP3091NR5

MRF6VP3091NBR1

MRF6VP3091NBR5

470-

-860 MHz, 90 W, 50 V

BROADBAND

RF POWER LDMOS TRANSISTORS

Signal Type

DVB--T (8k OFDM)

Features

•

Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz,

90 Watts CW Output Power

•

Characterized with Series Equivalent Large--Signal Impedance Parameters

•

Internally Input Matched for Ease of Use

•

Qualified Up to a Maximum of 50 V

Operation

•

Excellent Thermal Stability

•

Device can be used Single--Ended or in a Push--Pull Configuration

•

Integrated ESD Protection

•

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

•

225°C Capable Plastic Package

•

In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.

R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.

CASE 1486-

-03, STYLE 1

TO-

-270 WB-

-4

PLASTIC

MRF6VP3091NR1(NR5)

CASE 1484-

-04, STYLE 1

TO-

-272 WB-

-4

PLASTIC

MRF6VP3091NBR1(NBR5)

PARTS ARE PUSH-

-PULL

Gate 1

Drain 1

Table 1. Maximum Ratings

Rating

Drain--Source Voltage

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

(1,2)

Symbol

DSS

stg

Value

--0.5, +115

--6.0, +10

--65 to +150

150

225

Unit

Vdc

°C

Gate 2

Drain 2

(Top View)

Note: Exposed backside of the package is

the source terminal for the transistor.

Figure 1. Pin Connections

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Case Temperature 76°C, 18 W CW, 50 Vdc, I

= 350 mA, 860 MHz

Case Temperature 80°C, 90 W CW, 50 Vdc, I

= 350 mA, 860 MHz

Symbol

θJC

Value

(2,3)

0.79

0.82

Unit

°C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955,

Thermal Measurement Methodology of RF Power Amplifiers.

Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MRF6VP3091NR1

MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5

RF Device Data

Freescale Semiconductor, Inc.

MRF6VP3091NBR5相似产品对比

	MRF6VP3091NBR5	MRF6VP3091NBR1	MRF6VP3091NR5	MRF6VP3091NR1
描述	transistors RF mosfet vhv6 50v 4.5W	transistors RF mosfet vhv6 50v 4.5W to272wb4	transistors RF mosfet vhv6 50v 4.5W	transistors RF mosfet vhv6 50v 4.5W to270wb4
Manufacture	Freescale Semiconduc	Freescale Semiconduc	Freescale Semiconduc	Freescale Semiconduc
产品种类 Product Category	Transistors RF MOSFET	Transistors RF MOSFET	Transistors RF MOSFET	Transistors RF MOSFET
RoHS	Yes	Yes	Yes	Yes
Configurati	Single	Dual	Dual	Dual
频率 Frequency	470 MHz to 860 Mhz	0.47 GHz to 0.86 GHz	0.47 GHz to 0.86 GHz	0.47 GHz to 0.86 GHz
Gai	24 dB	21.8 dB	21.8 dB	21.8 dB
Output Powe	90 W	18 W	18 W	18 W
Vds - Drain-Source Breakdown Voltage	115 V	115 V	115 V	115 V
最大工作温度 Maximum Operating Temperature	+ 125 C	+ 150 C	+ 150 C	+ 150 C
安装风格 Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT
封装 / 箱体 Package / Case	TO-272	TO-272 WB	TO-270 WB	TO-270 WB
系列 Packaging	Reel	Reel	Reel	Reel
工厂包装数量 Factory Pack Quantity	50	500	50	500
Vgs th - Gate-Source Threshold Voltage	2.4 V	2.4 V	2.4 V	2.4 V
Unit Weigh	2 g	2 g	1.635 g	1.635 g
Transistor Polarity	-	N-Channel	N-Channel	N-Channel
Vgs - Gate-Source Breakdown Voltage	-	10 V	10 V	10 V