Freescale Semiconductor
Technical Data
Document Number: MRF8S9120N
Rev. 0, 9/2010
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 700 to
1000 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
=
800 mA, P
out
= 33 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
920 MHz
940 MHz
960 MHz
G
ps
(dB)
20.1
20.0
19.8
η
D
(%)
34.6
34.3
34.2
Output PAR
(dB)
6.3
6.3
6.3
ACPR
(dBc)
--37.2
--37.3
--37.4
MRF8S9120NR3
865-
-960 MHz, 33 W AVG., 28 V
SINGLE W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFET
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 120 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
), Designed for
Enhanced Ruggedness
•
Typical P
out
@ 1 dB Compression Point
≃
120 Watts CW
880 MHz
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
=
800 mA, P
out
= 33 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
865 MHz
880 MHz
895 MHz
G
ps
(dB)
20.8
20.8
20.6
η
D
(%)
35.0
35.0
34.8
Output PAR
(dB)
6.2
6.2
6.2
ACPR
(dBc)
--37.1
--37.5
--38.0
CASE 2021-
-03, STYLE 1
OM-
-780-
-2
PLASTIC
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
•
Designed for Digital Predistortion Error Correction Systems
•
Optimized for Doherty Applications
•
225°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
--0.5, +70
--6.0, +10
32, +0
--65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
©
Freescale Semiconductor, Inc., 2010. All rights reserved.
MRF8S9120NR3
1
RF Device Data
Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 76°C, 33 W CW, 28 Vdc, I
DQ
= 800 mA, 960 MHz
Case Temperature 76°C, 120 W CW, 28 Vdc, I
DQ
= 800 mA, 960 MHz
Symbol
R
θJC
Value
(1,2)
0.62
0.51
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 70 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 460
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 800 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
V
GS(th)
V
GS(Q)
V
DS(on)
1.4
2.3
0.1
2.2
3.1
0.2
2.9
3.8
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(3)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 800 mA, P
out
= 33 W Avg., f = 960 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
PAR
ACPR
IRL
19.0
33.0
6.0
—
—
19.8
34.2
6.3
--37.4
--20
22.0
—
—
--36.4
--12
dB
%
dB
dBc
dB
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 800 mA, P
out
= 33 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Frequency
920 MHz
940 MHz
960 MHz
G
ps
(dB)
20.1
20.0
19.8
η
D
(%)
34.6
34.3
34.2
Output PAR
(dB)
6.3
6.3
6.3
ACPR
(dBc)
--37.2
--37.3
--37.4
IRL
(dB)
--14
--24
--20
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Part internally matched both on input and output.
(continued)
MRF8S9120NR3
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
—
—
Typ
120
16
Max
—
—
Unit
W
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 800 mA, 920--960 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 52 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 40 MHz Bandwidth @ P
out
= 33 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
P1dB
IMD
sym
VBW
res
G
F
∆G
∆P1dB
—
—
—
—
46
0.3
0.016
0.002
—
—
—
—
MHz
dB
dB/°C
dB/°C
Typical Broadband Performance — 880 MHz
(In Freescale 880 MHz Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 800 mA,
P
out
= 33 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Frequency
865 MHz
880 MHz
895 MHz
G
ps
(dB)
20.8
20.8
20.6
η
D
(%)
35.0
35.0
34.8
Output PAR
(dB)
6.2
6.2
6.2
ACPR
(dBc)
--37.1
--37.5
--38.0
IRL
(dB)
--12
--13
--13
MRF8S9120NR3
RF Device Data
Freescale Semiconductor
3
R1
C19
C20
C22
C21
C13
C15 C16
C4
R2
C6 C8
CUT OUT AREA
C7 C9
C11
C12
C1
C2
C3
C5
C10
MRF8S9120N
Rev. 1
C14
C17 C18
Figure 1. MRF8S9120NR3 Test Circuit Component Layout
Table 6. MRF8S9120NR3 Test Circuit Component Designations and Values
Part
C1, C11, C20
C2
C3
C4, C10
C5
C6, C7
C8, C9
C12
C13, C14
C15, C16, C17, C18, C21
C19
C22
R1
R2
PCB
Description
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1.8 pF Chip Capacitor
2.0 pF Chip Capacitor
2.7 pF Chip Capacitors
6.8 pF Chip Capacitor
7.5 pF Chip Capacitors
2.2 pF Chip Capacitors
0.8 pF Chip Capacitor
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10
μF
Chip Capacitors
470
μF,
63 V Chip Capacitor
47
μF,
50 V Chip Capacitor
3.3
Ω,
1/4 W Chip Resistor
10
Ω,
1/4 W Chip Resistor
0.030″,
ε
r
= 3.5
Part Number
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P3.3VCT--ND
CRCW120610R0JNEA
RF--35A2
Manufacturer
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
Murata
Multicomp
Illinois Capacitor
Panasonic
Vishay
Taconic
MRF8S9120NR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
V
DD
= 28 Vdc, P
out
= 33 W (Avg.), I
DQ
= 800 mA
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
η
D
, DRAIN
EFFICIENCY (%)
20.4
20.2
20
G
ps
, POWER GAIN (dB)
19.8
19.6
19.4
19.2
19
18.8
18.6
PARC
840
860
ACPR
880
900
920
940
960
IRL
G
ps
Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
η
D
37.5
36.5
35.5
34.5
33.5
--34
ACPR (dBc)
--35
--36
--37
--38
--39
980
f, FREQUENCY (MHz)
0
--5
--10
--15
--20
--25
IRL, INPUT RETURN LOSS (dB)
--1
--1.2
--1.4
--1.6
--1.8
--2
PARC (dB)
18.4
820
Figure 2. Output Peak- -Average Ratio Compression (PARC)
-to-
Broadband Performance @ P
out
= 33 Watts Avg.
--10
--20
--30
--40
--50
IM7--U
--60
1
10
TWO--TONE SPACING (MHz)
100
IM7--L
IM5--U
IMD, INTERMODULATION DISTORTION (dBc)
V
DD
= 28 Vdc, P
out
= 52 W (PEP), I
DQ
= 800 mA
Two--Tone Measurements, (f1 + f2)/2 = Center
Frequency of 940 MHz
IM3--L
IM3--U
IM5--L
Figure 3. Intermodulation Distortion Products
versus Two-
-Tone Spacing
21
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
20.5
G
ps
, POWER GAIN (dB)
20
19.5
19
18.5
18
1
0
--1
--2
--2 dB = 43 W
--3
--4
--5
ACPR
--3 dB = 60 W
G
ps
PARC
60
50
η
D
40
30
20
10
0
--15
--20
--25
--30
--35
--40
--45
ACPR (dBc)
--1 dB = 30 W
20
30
40
50
60
70
P
out
, OUTPUT POWER (WATTS)
Figure 4. Output Peak- -Average Ratio
-to-
Compression (PARC) versus Output Power
η
D
,
DRAIN EFFICIENCY (%)
V
DD
= 28 Vdc, I
DQ
= 800 mA, f = 940 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
MRF8S9120NR3
RF Device Data
Freescale Semiconductor
5
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