Freescale Semiconductor
Technical Data
Document Number: MRF6S20010N
Rev. 4, 1/2014
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for Class A or Class AB general purpose applications with
frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation
and multipurpose amplifier applications.
Typical Two--Tone Performance @ 2170 MHz: V
DD
= 28 Volts, I
DQ
=
130 mA, P
out
= 10 Watts PEP
Power Gain — 15.5 dB
Drain Efficiency — 36%
IMD — --34 dBc
Typical 2--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
= 130 mA,
P
out
= 1 Watt Avg., Full Frequency Band (2130--2170 MHz), Channel
Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability
Power Gain — 15.5 dB
Drain Efficiency — 15%
IM3 @ 10 MHz Offset — --47 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — --49 dBc in 3.84 MHz Channel Bandwidth
Typical Single--Carrier N--CDMA Performance: V
DD
= 28 Volts, I
DQ
=
130 mA, P
out
= 1 Watt Avg., Full Frequency Band (1930--1990 MHz),
IS--95 (Pilot, Sync, Paging, Traffic Codes 8 through 13), Channel
Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 15.5 dB
Drain Efficiency — 16%
ACPR @ 885 kHz Offset = --60 dBc in 30 kHz Bandwidth
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ
= 130 mA, P
out
=
4 Watts Avg., Full Frequency Band (1805--1880 MHz)
Power Gain — 16 dB
Drain Efficiency — 33%
EVM — 1.3% rms
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2000 MHz, 10 Watts CW
Output Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
225C Capable Plastic Package
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel.
MRF6S20010NR1
MRF6S20010GNR1
1600-
-2200 MHz, 10 W, 28 V
GSM, GSM EDGE
SINGLE N-
-CDMA
2 x W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFETs
TO-
-270-
-2
PLASTIC
MRF6S20010NR1
TO-
-270G-
-2
PLASTIC
MRF6S20010GNR1
RF
in
/V
GS
2
1 RF
out
/V
DS
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Figure 1. Pin Connections
Value
--0.5, +68
--0.5, +12
--65 to +150
150
225
Unit
Vdc
Vdc
C
C
C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
Freescale Semiconductor, Inc., 2005--2006, 2008--2009, 2014. All rights reserved.
RF Device Data
Freescale Semiconductor
1
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 78C, 1 W CW
Case Temperature 79C, 10 W PEP, Two--Tone Test
Symbol
R
JC
Value
(1,2)
2.3
2.9
Unit
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1A
A
IV
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
C
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 40
Adc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 130 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 0.4 Adc)
Dynamic Characteristics
(3)
Output Capacitance
(V
DS
= 28 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 28 Vdc, V
GS
= 0 Vdc
30 mV(rms)ac @ 1 MHz)
C
oss
C
rss
C
iss
—
—
—
20
11.6
120
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1.5
2
—
2.2
2.8
0.33
3.5
4
0.4
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
500
Adc
Adc
Adc
Symbol
Min
Typ
Max
Unit
Functional Tests
(4)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 130 mA, P
out
= 10 W PEP, f1 = 2170 MHz,
f2 = 2170.1 MHz, Two--Tone Test
Power Gain
Drain Efficiency
Intermodulation Distortion
Input Return Loss
G
ps
D
IMD
IRL
14
33
—
—
15.5
36
--34
--15
17
—
--28
--9
dB
%
dBc
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Part internally matched on input.
4. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
(continued)
MRF6S20010NR1 MRF6S20010GNR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical 2-
-Carrier W-
-CDMA Performances
(In Freescale CDMA Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 130 mA, P
out
=
1 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @
5
MHz Offset. IM3 measured in 3.84 MHz Bandwidth @
10
MHz Offset.
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Gain Flatness in 30 MHz Bandwidth @ P
out
= 1 W CW
Intermodulation Distortion
Adjacent Channel Power Ratio
G
ps
D
G
F
IM3
ACPR
—
—
—
—
—
15.5
15
0.3
--47
--49
—
—
—
—
—
dB
%
dB
dBc
dBc
Typical N-
-CDMA Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 130 mA, P
out
= 1 W Avg.,
1930 MHz<Frequency<1990 MHz, Single--Carrier N--CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel
Bandwidth @
885
kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF
Power Gain
Drain Efficiency
Gain Flatness in 30 MHz Bandwidth @ P
out
= 1 W CW
Adjacent Channel Power Ratio
G
ps
D
G
F
ACPR
—
—
—
—
15.5
16
0.3
--60
—
—
—
—
dB
%
dB
dBc
Typical GSM EDGE Performances
(In Freescale GSM EDGE Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 130 mA, P
out
= 4 W Avg.,
1805--1880 MHz, EDGE Modulation
Power Gain
Drain Efficiency
Gain Flatness in 30 MHz Bandwidth @ P
out
= 4 W CW
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
G
ps
D
G
F
EVM
SR1
SR2
—
—
—
—
—
—
16
33
0.3
1.3
--60
--70
—
—
—
—
—
—
dB
%
dB
% rms
dBc
dBc
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
3
V
BIAS
+
R1
V
SUPPLY
R2
C1
C7
Z9
Z16
Z10
Z11
DUT
Z17
Z12
Z13
Z14
C6
Z15
RF
OUTPUT
C3
C4
C5
C11
R3
RF
INPUT
Z1
C2
Z2
Z3
Z4
Z5
Z6
Z7
Z8
C8
C9
C10
Z1, Z15
Z2
Z3, Z5
Z4
Z6
Z7
Z8
Z9
0.066 x 0.480 Microstrip
0.066 x 0.765 Microstrip
0.066 x 0.340 x 0.050 Taper
0.340 x 0.295 Microstrip
0.020 x 0.060 Microstrip
0.0905 x 0.280 Microstrip
0.0905 x 0.330 Microstrip
0.050 x 0.980 Microstrip
Z10
Z11
Z12
Z13
Z14
Z16, Z17
PCB
0.930 x 0.350 Microstrip
0.930 x 0.400 Microstrip
0.050 x 0.105 Microstrip
0.405 x 0.242 Microstrip
0.066 x 0.740 Microstrip
0.050 x 1.250 Microstrip
Taconic RF--35, 0.030,
r
= 3.5
Figure 2. MRF6S20010NR1 Test Circuit Schematic — 2110-
-2170 MHz
Table 6. MRF6S20010NR1 Test Circuit Component Designations and Values — 2110-
-2170 MHz
Part
C1
C2, C6
C3, C7, C8
C4, C5, C9, C10
C11
R1
R2
R3
Description
100 nF Chip Capacitor
4.7 pF Chip Capacitors
9.1 pF Chip Capacitors
10
F,
50 V Chip Capacitors
10
F,
35 V Tantalum Chip Capacitor
1 k, 1/4 W Chip Resistor
10 k, 1/4 W Chip Resistor
10
,
1/4 W Chip Resistor
Part Number
CDR33BX104AKYS
ATC100B4R7CT500XT
ATC100B9R1CT500XT
GRM55DR61H106KA88B
T490D106K035AT
CRCW12061001FKEA
CRCW12061002FKEA
CRCW120610R0FKEA
Manufacturer
Kemet
ATC
ATC
Murata
Kemet
Vishay
Vishay
Vishay
MRF6S20010NR1 MRF6S20010GNR1
4
RF Device Data
Freescale Semiconductor
C11
R1
R2 C1
C3
C4
C7
R3
C5
C2
C6
CUT OUT AREA
C9
C8
MRF6S20010N, Rev. 2
C10
Figure 3. MRF6S20010NR1 Test Circuit Component Layout — 2110-
-2170 MHz
MRF6S20010NR1 MRF6S20010GNR1
RF Device Data
Freescale Semiconductor
5
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