Freescale Semiconductor
Technical Data
Document Number: MRFE6S9060N
Rev. 1, 10/2007
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
this device makes it ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
•
Typical Single - Carrier N - CDMA Performance @ 880 MHz, V
DD
= 28 Volts,
I
DQ
= 450 mA, P
out
= 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 21.1 dB
Drain Efficiency — 33%
ACPR @ 750 kHz Offset — - 45.7 dBc in 30 kHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
GSM EDGE Application
•
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ
= 500 mA,
P
out
= 21 Watts Avg., Full Frequency Band (920 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.5% rms
GSM Application
•
Typical GSM Performance: V
DD
= 28 Volts, I
DQ
= 500 mA, P
out
= 60 Watts,
Full Frequency Band (920 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 63%
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Integrated ESD Protection
•
225°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Maximum Operation Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
MRFE6S9060NR1
880 MHz, 14 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 1265- 09, STYLE 1
TO - 270 - 2
PLASTIC
Value
- 0.5, +66
- 0.5, + 12
32, +0
- 65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 60 W CW
Case Temperature 78°C, 14 W CW
Symbol
R
θJC
Value
(2,3)
0.77
0.88
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators
by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2007. All rights reserved.
MRFE6S9060NR1
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
2 (Minimum)
B (Minimum)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 66 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
μA)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 450 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 1.5 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 28 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
1.1
33
109
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1
2
0.05
2.2
3
0.27
3
4
0.4
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
10
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 450 mA, P
out
= 14 W Avg., f = 880 MHz, Single - Carrier
N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @
±750
kHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
ACPR
IRL
20
30.5
—
—
21.1
33
- 45.7
- 18
23
—
- 44
-9
dB
%
dBc
dB
(continued)
MRFE6S9060NR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances
(In Freescale GSM EDGE Test Fixture Optimized for 920 - 960 MHz, 50 ohm system) V
DD
= 28 Vdc,
I
DQ
= 500 mA, P
out
= 21 W Avg., f = 920 - 960 MHz, GSM EDGE Signal
Power Gain
Drain Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
G
ps
η
D
EVM
SR1
SR2
—
—
—
—
—
20
46
1.5
- 62
- 78
—
—
—
—
—
dB
%
%
dBc
dBc
Typical CW Performances
(In Freescale GSM Test Fixture Optimized for 920 - 960 MHz, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 500 mA,
P
out
= 60 W, f = 920 - 960 MHz
Power Gain
Drain Efficiency
Input Return Loss
P
out
@ 1 dB Compression Point
(f = 940 MHz)
G
ps
η
D
IRL
P1dB
—
—
—
—
20
63
- 12
67
—
—
—
—
dB
%
dB
W
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 450 mA, 865 - 900 MHz Bandwidth
Video Bandwidth @ 60 W PEP P
out
where IM3 = - 30 dBc
VBW
(Tone Spacing from 100 kHz to VBW)
—
3
—
ΔIMD3
= IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
Gain Flatness in 35 MHz Bandwidth @ P
out
= 14 W Avg.
Gain Variation over Temperature
( - 30°C to +85°C)
Output Power Variation over Temperature
( - 30°C to +85°C)
G
F
ΔG
ΔP1dB
—
—
—
0.27
0.011
0.088
—
—
—
MHz
dB
dB/°C
dBm/°C
MRFE6S9060NR1
RF Device Data
Freescale Semiconductor
3
B1
R1
V
BIAS
+
C9
RF
INPUT
+
C7
R2
R3
C8
L1
Z10
Z1
C1
C2
C3
C4
C5
Z2
Z3
Z4
Z5
Z6
Z7
Z8
C6 Z9
C10
DUT
C11 L2
Z11
B2
+
C15
C16
+
C17
+
C19
R4
V
SUPPLY
C18
RF
Z15 OUTPUT
Z12
Z13
Z14
C14
C12
C13
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
0.215″
0.221″
0.500″
0.460″
0.040″
0.280″
0.087″
0.435″
x 0.065″
x 0.065″
x 0.100″
x 0.270″
x 0.270″
x 0.270″
x 0.525″
x 0.525″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
x 0.530″ Taper
Microstrip
Microstrip
Z9
Z10
Z11
Z12
Z13
Z14
Z15
PCB
0.057″ x 0.525″ Microstrip
0.360″ x 0.270″ Microstrip
0.063″ x 0.270″ Microstrip
0.360″ x 0.065″ Microstrip
0.170″ x 0.065″ Microstrip
0.880″ x 0.065″ Microstrip
0.260″ x 0.065″ Microstrip
Taconic RF - 35 0.030″,
ε
r
= 3.5
Figure 1. MRFE6S9060NR1 Test Circuit Schematic
Table 6. MRFE6S9060NR1 Test Circuit Component Designations and Values
Part
B1
B2
C1, C8, C14, C15
C2, C4, C13
C3
C5, C6
C7, C16, C17
C9
C10, C11
C12
C18
C19
L1, L2
R1
R2
R3
R4
Ferrite Bead
Ferrite Bead
47 pF Chip Capacitors
0.8 - 8.0 pF Variable Capacitors, Gigatrim
3.0 pF Chip Capacitor
15 pF Chip Capacitors
10
μF,
35 V Tantalum Capacitors
100
μF,
50 V Electrolytic Capacitor
12 pF Chip Capacitors
4.3 pF Chip Capacitor
0.56
μF
Chip Capacitor
470
μF,
63 V Electrolytic Capacitor
12.5 nH Inductor
1 kΩ, 1/4 W Chip Resistor
560 kΩ, 1/4 W Chip Resistor
12
Ω,
1/4 W Chip Resistor
27
W,
1/4 W Chip Resistor
Description
Part Number
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274021447
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A04T - 5
CRCW12061001FKEA
CRCW12065600FKEA
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Manufacturer
Fair Rite
Fair Rite
ATC
Johanson
ATC
ATC
Kemet
Multicomp
ATC
ATC
ATC
Multicomp
Coilcraft
Vishay
Vishay
Vishay
Vishay
MRFE6S9060NR1
4
RF Device Data
Freescale Semiconductor
C7
R2
B1
R3
C19
V
DD
C16 C17
V
GG
R1
B2
C8
R4
C9
L1
C1
C2
C3
C5
C6
C15
L2
CUT OUT AREA
C11
C10
C18
C12
C13
C14
C4
TO−270/272
Surface /
Bolt down
Figure 2. MRFE6S9060NR1 Test Circuit Component Layout
MRFE6S9060NR1
RF Device Data
Freescale Semiconductor
5
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