BC817SU
NPN Silicon AF Transistor
•
For general AF applications
•
High collector current
•
High current gain
•
Low collector-emitter saturation voltage
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
4
5
6
1
2
3
Type
BC817SU
Maximum Ratings
Parameter
Marking
B6s
1=E
2=C
Pin Configuration
3=C
4=C
5=C
6=B
Package
SC74
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Symbol
R
thJS
Value
45
50
5
500
1
100
200
1000
150
-65 ... 150
Unit
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current,
t
p
≤
10 ms
Base current
Peak base current
Total power dissipation-
T
S
≤
100°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
mA
A
mA
mW
°C
Value
≤
50
Unit
Junction - soldering point
1)
K/W
1
For calculation of
R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
1
2011-08-30
BC817SU
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
DC Characteristics
Symbol
min.
Values
typ.
max.
Unit
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
45
50
5
-
-
-
-
-
-
V
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector-base cutoff current
V
CB
= 25 V,
I
E
= 0
V
CB
= 25 V,
I
E
= 0 ,
T
A
= 150 °C
µA
-
-
-
-
-
0.1
50
100
nA
-
160
40
250
-
-
-
400
-
0.4
1.2
V
Emitter-base cutoff current
V
EB
= 4 V,
I
C
= 0
I
EBO
h
FE
-
DC current gain
1)
I
C
= 100 mA,
V
CE
= 1 V
I
C
= 500 mA,
V
CE
= 1 V
Collector-emitter saturation voltage
1)
I
C
= 500 mA,
I
B
= 50 mA
V
CEsat
V
BEsat
-
-
Base emitter saturation voltage
1)
I
C
= 500 mA,
I
B
= 50 mA
AC Characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
f
= 1 MHz,
V
BE
= 10 V
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
1
Pulse
f
T
C
cb
C
eb
-
-
-
170
3
40
-
-
-
MHz
pF
test: t < 300µs; D < 2%
2
2011-08-30
BC817SU
DC current gain
h
FE
=
ƒ
(
I
C
)
V
CE
= 1 V
10
3
Collector-emitter saturation voltage
I
C
=
ƒ
(
V
CEsat
),
h
FE
= 10
0.4
V
U
ce
H
fe
10
2
125 °C
85 °C
25 °C
- 40 °C
0.2
150 °C
25 °C
- 50 °C
0.1
10
1 -5
10
10
-4
10
-3
10
-2
10
-1
A
10
0
0
-4
10
10
-3
10
-2
10
-1
A
10
0
I
c
I
c
Base-emitter saturation voltage
I
C
= (
V
BEsat
),
h
FE
= 10
1.5
V
Collector cutoff current
I
CBO
=
ƒ
(
T
A
)
V
CBO
= 25 V
10
5
BC 817/818
EHP00221
Ι
CBO
1.2
1.1
nA
10
4
U
be
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-4
10
150 °C
25 °C
- 50 °C
10
3
max
10
2
typ
10
1
10
-3
10
-2
10
-1
A
10
0
10
0
0
50
100
˚C
T
A
150
I
c
3
2011-08-30
BC817SU
Transition frequency
f
T
=
ƒ
(
I
C
)
V
CE
= parameter in V,
f
= 2 GHz
10
3
f
T
MHz
5
mW
BC 817/818
EHP00218
Total power dissipation
P
tot
=
ƒ
(
T
S
)
1200
10
2
P
tot
800
600
5
400
200
10
1
10
0
10
1
10
2
mA
10
3
0
0
50
°C
T
S
150
Ι
C
Permissible Pulse Load
R
thJS
=
ƒ
(
t
p
)
Permissible Pulse Load
P
totmax
/
P
totDC
=
ƒ
(
t
p
)
10
3
10
3
-
10
2
P
totmax/PtotDC
R
thJS
10
2
10
1
10
0
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10
1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
-1 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
10
0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
T
P
T
P
4
2011-08-30
Package SC74
BC817SU
Package Outline
2.9
±0.2
(2.25)
B
(0.35)
2.5
±0.1
6
5
4
1.1 MAX.
0.15
+0.1
-0.06
0.25
±0.1
1.6
±0.1
10˚ MAX.
1
2
3
Pin 1
marking
1.9
0.35
+0.1
-0.05
0.95
10˚ MAX.
0.2
M
B 6x
0.2
M
A
0.1 MAX.
A
Foot Print
0.5
0.95
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
1.9
2.9
Manufacturer
2005, June
Date code (Year/Month)
Pin 1 marking
Laser marking
BCW66H
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
4
0.2
Pin 1
marking
3.15
2.7
8
1.15
5
2011-08-30
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