DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BYV26 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of February 1994
1996 May 30
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy
absorption capability
•
Available in ammo-pack.
DESCRIPTION
Rugged glass SOD57 package, using
a high temperature alloyed
construction.
BYV26 series
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
2/3 page
k
(Datasheet)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
PARAMETER
repetitive peak reverse voltage
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
BYV26F
BYV26G
V
R
continuous reverse voltage
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
BYV26F
BYV26G
I
F(AV)
average forward current
BYV26A to E
BYV26F and G
I
F(AV)
average forward current
BYV26A to E
BYV26F and G
I
FRM
repetitive peak forward current
BYV26A to E
BYV26F and G
a
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
CONDITIONS
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
MAX.
200
400
600
800
1000
1200
1400
200
400
600
800
1000
1200
1400
1.00
1.05
V
V
V
V
V
V
V
V
V
V
V
V
V
V
A
A
UNIT
T
tp
= 85
°C;
lead length = 10 mm;
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
T
amb
= 60
°C;
PCB mounting (see
Fig.19); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
T
tp
= 85
°C;
see Figs 6 and 7
−
−
−
−
−
−
0.65
0.68
A
A
10.0
9.6
A
A
1996 May 30
2
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
SYMBOL
I
FRM
PARAMETER
repetitive peak forward current
BYV26A to E
BYV26F and G
I
FSM
E
RSM
T
stg
T
j
non-repetitive peak forward current t = 10 ms half sine wave; T
j
= T
j max
prior to surge; V
R
= V
RRMmax
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
see Figs 12 and 13
I
R
= 400 mA; T
j
= T
j max
prior to
surge; inductive load switched off
CONDITIONS
T
amb
= 60
°C;
see Figs 8 and 9
−
−
−
−
−65
−65
BYV26 series
MIN.
MAX.
6.0
6.4
30
10
+175
+175
A
A
A
UNIT
mJ
°C
°C
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
BYV26A to E
BYV26F and G
V
F
forward voltage
BYV26A to E
BYV26F and G
V
(BR)R
reverse avalanche breakdown
voltage
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
BYV26F
BYV26G
I
R
reverse current
V
R
= V
RRMmax
; see Fig.16
V
R
= V
RRMmax
;
T
j
= 165
°C;
see Fig.16
t
rr
reverse recovery time
BYV26A to C
BYV26D and E
BYV26F and G
C
d
diode capacitance
BYV26A to C
BYV26D and E
BYV26F and G
f = 1 MHz; V
R
= 0 V;
see Figs 17 and 18
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A;
see Fig.20
I
R
= 0.1 mA
300
500
700
900
1100
1300
1500
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
5
150
V
V
V
V
V
V
V
µA
µA
I
F
= 1 A;
see Figs 14 and 15
CONDITIONS
I
F
= 1 A; T
j
= T
j max
;
see Figs 14 and 15
MIN.
−
−
−
−
TYP.
−
−
−
−
MAX.
1.3
1.3
2.50
2.15
V
V
V
V
UNIT
−
−
−
−
−
−
−
−
−
45
40
35
30
75
150
−
−
−
ns
ns
ns
pF
pF
pF
1996 May 30
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
SYMBOL
dI
R
--------
dt
PARAMETER
CONDITIONS
MIN.
BYV26 series
TYP.
MAX.
UNIT
maximum slope of reverse recovery when switched from
I
F
= 1 A to V
R
≥
30 V and
current
dI
F
/dt =
−1
A/µs;
BYV26A to C
see Fig.21
BYV26D and E
BYV26F and G
−
−
−
−
−
−
7
6
5
A/µs
A/µs
A/µs
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.19.
For more information please refer to the
“General Part of associated Handbook”.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
lead length = 10 mm
VALUE
46
100
UNIT
K/W
K/W
1996 May 30
4
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
GRAPHICAL DATA
MSA855
BYV26 series
handbook, halfpage
1
handbook, halfpage
2
MLB533
20 15
I F(AV)
(A)
10 lead length (mm)
I F(AV)
(A)
lead length 10 mm
0.5
1
0
0
100
T tp (
o
C)
200
0
0
100
T tp (
o
C)
200
BYV26A to E
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
BYV26F and G
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
Fig.2
Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
Fig.3
Maximum average forward current as a
function of tie-point temperature (including
losses due to reverse leakage).
handbook, halfpage
1
MSA856
handbook, halfpage
1
MLB534
I F(AV)
(A)
I F(AV)
(A)
0.5
0.5
0
0
100
Tamb ( C)
o
0
200
0
100
Tamb ( C)
o
200
BYV26A to E
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.19.
Switched mode application.
BYV26F and G
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.19.
Switched mode application.
Fig.4
Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
Fig.5
Maximum average forward current as a
function of ambient temperature (including
losses due to reverse leakage).
1996 May 30
5
Microchip MCU
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